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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD042P03L3GBTMA1

Name: IPD042P03L3GBTMA1
Brand: Infineon Technologies
SKU: IPD042P03L3GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD042P03L3GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD042P03L3GBTMA1.pdf

Description:: MOSFET P-CH 30V 70A TO252-3

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Inventory:4,980

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Product details

Overview

IPD042P03L3GBTMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET in PG-TO252-3 package, rated for -30 V V_DS, 4.2 mΩ R_DS(on) at V_GS = -10 V and I_D = -70 A, with 175 °C maximum junction temperature. It serves as a high-side load switch in automotive body electronics and industrial power distribution systems requiring robust avalanche capability and low gate charge.

For engineers reviewing the IPD042P03L3GBTMA1 datasheet, IPD042P03L3GBTMA1 pinout, IPD042P03L3GBTMA1 application, or IPD042P03L3GBTMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, E_AS rating of 269 mJ, thermal resistance R_thJC = 1.0 K/W, and integrated reverse diode performance (t_rr = 54–68 ns).

Technical Context

This device uses trench-based OptiMOS™ P3 technology optimized for low R_DS(on) and fast switching in DC-DC converters and load-switching applications. Its logic-level gate enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The integrated body diode features low Q_rr (61–76 nC) and fast t_rr, supporting synchronous rectification and flyback recovery in high-frequency power stages. Thermal design is supported by a low R_thJC and validated operation up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - supports 24 V automotive and industrial bus systems with margin against transients
R_DS(on) max @ V_GS = -4.5 V	6.8 mΩ - enables efficient 70 A load switching with minimal conduction loss at logic-level drive
I_D continuous @ T_C = 100 °C	-280 A - sustains high-current pulsed loads in motor control and solenoid drivers
E_AS	269 mJ - withstands inductive energy spikes without failure in unclamped inductive switching
Q_g total	131–175 nC - determines gate driver power requirement and switching speed in hard-switched topologies
t_r/t_f	167–251 ns / 22–33 ns - enables >500 kHz switching in buck and half-bridge configurations
R_thJC	1.0 K/W - allows 150 W power dissipation with ≤150 K temperature rise from junction to case

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal for P-channel MOSFET	Reference node for gate drive; connects to system ground or higher potential depending on HS/LS configuration
Pin 2 (Gate)	Control input	Accepts logic-level voltage (≤ -4.5 V) to fully enhance channel; requires <175 nC charge for full turn-on
Pin 3 (Drain)	Main current path output	Connected to PCB copper area ≥6 cm² for thermal management; carries full load current and avalanche energy

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = -2.0 to -1.0 V - ensures reliable turn-on with standard 3.3 V/5 V MCU GPIOs
Low R_DS(on) at 4.5 V	6.8 mΩ max - reduces conduction losses by >40% vs. legacy P-channel devices at same voltage drive
High avalanche energy rating	E_AS = 269 mJ - eliminates need for external snubbers in inductive load switching
Integrated fast-recovery body diode	t_rr = 54–68 ns, Q_rr = 61–76 nC - supports high-frequency synchronous rectification without external diode
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and JESD22-A114 Class 2 (2–4 kV HBM) - suitable for automotive and industrial safety-critical assemblies

Applications

Automotive Body Control Module (BCM)

Industrial PLC Output Stage

Use Scenario: Controlling 12 V/24 V lighting, HVAC actuators, and door locks in vehicle BCMs.

IC Role / Device Role / Timing Role: High-side load switch managing up to 70 A peak current with fast turn-off to prevent latch-up during short circuits.

Use Value: Eliminates need for external gate driver ICs and discrete protection components due to integrated avalanche ruggedness and logic-level compatibility.

Use Scenario: Driving solenoids, relays, and small motors in programmable logic controller digital output modules.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays, providing sub-100 ns turn-off for precise timing control.

Use Value: Enables 100,000+ cycle lifetime and reduced electromagnetic interference compared to mechanical contacts.

Server PSU OR-ing Circuit

DC-DC Converter Synchronous Rectifier

Use Scenario: Hot-swap and redundancy management in 12 V server power supplies using N+1 architecture.

IC Role / Device Role / Timing Role: Reverse-polarity blocking element with low forward drop and fast reverse recovery.

Use Value: Reduces power loss by 60% versus Schottky diodes at 50 A, improving efficiency and thermal margin.

Use Scenario: Secondary-side rectification in isolated 48 V–12 V buck-derived converters for telecom and datacom equipment.

IC Role / Device Role / Timing Role: Synchronously commutated low-side switch replacing freewheeling diode in active clamp or LLC topologies.

Use Value: Achieves >95% efficiency at 200 kHz due to low Q_gd (14–21 nC) and minimal reverse recovery charge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 20 mΩ @ V_GS = -10 V; E_AS = 120 mJ; slower t_r/t_f (100/60 ns)	Lower current handling (-74 A DC); unsuitable for >300 kHz switching or high-energy inductive loads	Select when cost sensitivity outweighs efficiency and frequency requirements
STP36PF06	R_DS(on) = 12 mΩ @ V_GS = -10 V; no specified E_AS; R_thJC = 1.5 K/W	Limited thermal performance and missing avalanche rating reduce reliability in automotive transients	Prefer only in non-automotive, low-dV/dt environments with ample heatsinking

Compared with IRF4905PBF and STP36PF06, IPD042P03L3GBTMA1 delivers superior conduction efficiency, higher avalanche robustness, and faster switching-making it optimal for space-constrained, high-reliability 24 V systems where thermal headroom and transient immunity are critical.

Availability

IPD042P03L3GBTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, server PSU OR-ing circuits, and DC-DC converter synchronous rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPD042P03L3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and IATF 16949.

This device belongs to the OptiMOS™ P3 Power-Transistor product line, engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V–48 V automotive and industrial power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPD042P03L3GBTMA1 supports -280 A continuous drain current at T_C = 100 °C under pulsed conditions (t_p ≤ 10 s), as defined in the Safe Operating Area (SOA) chart on page 4 of the datasheet. For DC operation, derating applies per the P_tot vs. T_C curve, yielding ~150 A at T_C = 100 °C with adequate PCB copper area.

Does this MOSFET require a gate resistor for stability?

A gate resistor (R_G,ext) is recommended to control dV/dt and suppress oscillation during switching. The datasheet specifies R_G,ext = 6 Ω for gate charge characterization (page 3). Typical values range from 2.2 Ω to 10 Ω depending on driver strength and EMI constraints-lower values increase switching speed but risk ringing.

Can IPD042P03L3GBTMA1 be used in parallel configurations?

Yes-its negative temperature coefficient for R_DS(on) (page 6, Fig. 9) enables inherent current sharing when paralleled. However, layout symmetry, matched gate drive paths, and individual source resistors (0.01–0.02 Ω) are required to ensure balanced dynamic current distribution and avoid thermal runaway.

Is the body diode suitable for reverse polarity protection?

Yes-the integrated body diode has V_SD = -1.1 V at I_F = -70 A and T_j = 25 °C (page 3), making it effective for reverse-voltage blocking in 12 V/24 V systems. Its fast t_rr (54–68 ns) minimizes cross-conduction loss when used with complementary high-side switches in bidirectional power paths.

IPD042P03L3GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 175 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD042P03L3GBTMA1 FAQ

1.How can I place an order for IPD042P03L3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD042P03L3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD042P03L3GBTMA1 reliable?

The price and inventory of IPD042P03L3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD042P03L3GBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD042P03L3GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD042P03L3GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD042P03L3GBTMA1?

IPD042P03L3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD042P03L3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD042P03L3GBTMA1?

For technical support, including IPD042P03L3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD042P03L3GBTMA1 requirements.

6.How does Aetrix verify that IPD042P03L3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD042P03L3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD042P03L3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD042P03L3GBTMA1?

All IPD042P03L3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD042P03L3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD042P03L3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD042P03L3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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