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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD04N03LA G

Name: IPD04N03LA G
Brand: Infineon Technologies
SKU: IPD04N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD04N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD04N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD04N03LA G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-11 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 3.8 mΩ max R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, 600 mJ single-pulse avalanche energy, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency synchronous buck converters in server VRMs.

For engineers reviewing the IPD04N03LA G datasheet, IPD04N03LA G pinout, IPD04N03LA G application, or IPD04N03LA G equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, low thermal resistance (R_thJC = 1.3 K/W), integrated body diode with 15 nC Q_rr, and JEDEC-qualified reliability for industrial power stages.

Technical Context

This MOSFET employs a trench-based OptiMOS®2 process to achieve low R_DS(on) while maintaining robust switching performance: t_d(on) = 14–21 ns, t_d(off) = 44–66 ns, and Q_g = 31–41 nC. Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) ensures reliable turn-on with standard 3.3 V/5 V logic drivers.

The device integrates a fast-recovery body diode (Q_rr = 15 nC, V_SD = 0.89–1.2 V at I_F = 50 A) and supports high dv/dt immunity (6 kV/µs) under hard-switching conditions. Thermal design is enabled by its 1.3 K/W junction-to-case resistance and qualification for 175 °C continuous operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V logic-level gate drive
R_DS(on) max	3.8 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-current VRM phases
I_D continuous	50 A at T_C = 25 °C - Supported by bondwire-limited current rating and low R_thJC
E_AS	600 mJ - Robust single-pulse avalanche capability for inductive load switching and fault tolerance
Q_g	31–41 nC - Low total gate charge enables efficient 500 kHz+ switching with moderate gate driver strength
dv/dt immunity	6 kV/µs - Ensures stable operation during fast voltage transients in high-side configurations
T_j max	175 °C - Extended thermal margin for compact heatsink designs and high ambient environments

Pinout & Package

IPD04N03LA G uses the PG-TO252-3-11 surface-mount package (DPAK variant), with exposed drain pad for thermal conduction and mechanical stability on PCB. Pin assignment is standardized across TO252-3 variants.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-impedance return path for load current; connected to ground plane or source node in half-bridge
Pin 2 (Gate)	Control input	Logic-level compatible input requiring ≤20 V absolute max; drives internal channel via 1.3 Ω gate resistance
Pin 3 (Drain)	Power output / high-side switch node	Exposed copper pad on bottom surface - primary thermal path to PCB copper area; electrically tied to drain

Key Features

Feature	Design Value
OptiMOS®2 trench technology	Enables 3.8 mΩ R_DS(on) at 25 V rating without sacrificing switching speed or ruggedness
Logic-level gate drive	V_GS(th) = 1.2–2.0 V allows direct interface with 3.3 V microcontrollers and PWM controllers
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 for automotive and industrial applications requiring long-term stability
Enhanced body diode	Q_rr = 15 nC and soft recovery reduce EMI and cross-conduction losses in synchronous rectification
RoHS-compliant lead plating	Pb-free finish meets EU RoHS Directive 2011/65/EU and supports lead-free reflow assembly

Applications

Server Voltage Regulator Modules

Industrial DC-DC Converters

Use Scenario: High-density 48 V–12 V intermediate bus conversion in rack-mounted servers using multiphase buck topologies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500 kHz–1 MHz multiphase buck stages, operating with 5 V gate drive.

Use Value: 3.8 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 5 mΩ devices, improving full-load efficiency by ~0.8% at 50 A per phase.

Use Scenario: Isolated 24 V input to 5 V/3.3 V point-of-load regulation in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck regulators driving FPGA or ASIC core supplies.

Use Value: 175 °C T_j,max and 1.3 K/W R_thJC allow sustained 45 A operation in sealed enclosures without forced air cooling.

Automotive Body Control Modules

Telecom Power Supplies

Use Scenario: Load switching for LED headlamps, HVAC actuators, and solenoid drivers in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN-linked microcontroller GPIO pins.

Use Value: Logic-level V_GS(th) ensures full enhancement at 3.3 V MCU outputs, eliminating need for level-shifting circuitry.

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers delivering 12 V/20 A to base station RF modules.

IC Role / Device Role / Timing Role: Synchronous FET replacing Schottky diodes in forward or LLC secondary stages.

Use Value: 600 mJ E_AS withstands inductive kickback during hot-swap events, improving system field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB04N03LG	Same OptiMOS®2 die, but in PG-TO263-3 (D2PAK) package; R_thJC = 0.9 K/W, higher I_D,pulse = 400 A	Better thermal performance in high-power, low-airflow environments; larger footprint required	Select when board space permits and junction temperature must stay below 150 °C at >60 A average current
STL130N3LLH6	130 A rated, 2.2 mΩ R_DS(on) at 10 V, but requires 4.5 V min V_GS; no JEDEC qualification for automotive	Higher current capacity but less suitable for 3.3 V logic drive and mission-critical automotive use	Prefer for cost-sensitive industrial SMPS where gate drive is ≥4.5 V and qualification is not mandated

Compared with IPB04N03LG, IPD04N03LA G offers smaller footprint and identical electrical specs but trades 0.4 K/W higher R_thJC; versus STL130N3LLH6, it delivers guaranteed 3.3 V drive compatibility and automotive-grade reliability at lower peak current capability.

Availability

IPD04N03LA G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, automotive body control modules, and telecom power supplies requiring stable component supply and long lifecycle support.

Supply support for IPD04N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

IPD04N03LA G belongs to the OptiMOS®2 power transistor product line, designed specifically for high-efficiency, high-current DC-DC conversion in computing, telecom, and automotive applications where logic-level drive and thermal robustness are essential.

FAQ

Is IPD04N03LA G suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.2–2.0 V and guaranteed turn-on at V_GS = 4.5 V, IPD04N03LA G fully enhances under 3.3 V logic drive in typical PCB layouts. Its low Q_g (31–41 nC) minimizes Miller plateau duration, ensuring clean switching even with limited drive strength.

What is the maximum recommended PCB copper area for thermal performance?

For optimal thermal performance, Infineon specifies a 6 cm² copper area (single-layer, 70 µm thick) on FR4 PCB, vertically mounted in still air. This achieves R_thJA = 50 K/W. Reducing copper area below 4 cm² increases junction temperature significantly-e.g., 2 cm² raises R_thJA to ~75 K/W.

Does IPD04N03LA G have avalanche rating for inductive load switching?

Yes. It is rated for 600 mJ single-pulse avalanche energy (E_AS) at I_D = 45 A with R_GS = 25 Ω. This rating applies to unclamped inductive switching events and is validated per JEDEC JESD22-A110, making it suitable for relay drivers and solenoid controls without external snubbers.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.89–1.2 V at 50 A and Q_rr = 15 nC, offering lower forward drop than 100 V Schottkys but higher than ultra-low-V_F silicon carbide diodes. Its soft recovery reduces ringing and EMI, enabling simpler layout than discrete alternatives in synchronous buck topologies.

IPD04N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5199 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD04N03LA G FAQ

1.How can I place an order for IPD04N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD04N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD04N03LA G reliable?

The price and inventory of IPD04N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD04N03LA G is usually 5 days.

3.What payment methods are accepted for IPD04N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD04N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD04N03LA G?

IPD04N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD04N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD04N03LA G?

For technical support, including IPD04N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD04N03LA G requirements.

6.How does Aetrix verify that IPD04N03LA G is sourced from the original manufacturer or authorized distributors?

All IPD04N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD04N03LA G meets industry standards.

7.What is the process for return or replacement of IPD04N03LA G?

All IPD04N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPD04N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD04N03LA G part is unused and in its original packaging.

Return procedure for IPD04N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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