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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD04N03LB G

Name: IPD04N03LB G
Brand: Infineon Technologies
SKU: IPD04N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD04N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD04N03LB G.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

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Product details

Overview

IPD04N03LB G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 4.1 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 50 A, with 175 °C maximum junction temperature and qualified per JEDEC standards for high-frequency DC/DC converters.

For engineers reviewing the IPD04N03LB G datasheet, IPD04N03LB G pinout, IPD04N03LB G application, or IPD04N03LB G equivalent, key selection criteria include gate charge × R_DS(on) figure-of-merit, thermal resistance (R_thJC = 1.3 K/W), reverse diode dv/dt capability (6 kV/µs), and SMD-compatible TO252 footprint for high-current synchronous rectification.

Technical Context

This device employs a trench-based silicon process optimized for low R_DS(on) and fast switching in high-efficiency buck converters and OR-ing circuits. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

Dynamic parameters-including C_iss = 3900–5200 pF, Q_g = 30–40 nC, and t_d(off) = 43–65 ns-support operation above 500 kHz while maintaining low conduction and switching losses. The integrated body diode exhibits Q_rr ≤ 10 nC and V_SD ≤ 1.2 V at 50 A, enabling efficient synchronous FET replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications with margin
R_DS(on) max	4.1 mΩ @ V_GS = 10 V, I_D = 50 A - Enables <1.0 W conduction loss at 50 A
I_D continuous	50 A @ T_C = 25 °C - Supported by low R_thJC = 1.3 K/W for heatsink-limited designs
Q_g	30–40 nC - Determines gate driver current requirement and switching speed trade-off
E_AS	430 mJ - Withstands single-pulse inductive energy in non-clamped topologies
T_j max	175 °C - Allows operation in sealed industrial enclosures without derating at full load
dv/dt rating	6 kV/µs - Resists false turn-on in high-dI/dt synchronous rectifier layouts

Pinout & Package

IPD04N03LB G uses the PG-TO252-3-11 surface-mount package (DPAK), with drain-connected tab for thermal and electrical performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Logic-level input requiring ≤20 V drive; low Q_gs (11–15 nC) minimizes driver loss
Pin 2 (D)	Drain terminal / thermal pad	Exposed copper tab electrically connected to drain; must be soldered to PCB copper pour for R_thJC = 1.3 K/W
Pin 3 (S)	Source terminal	Reference node for gate drive; low-inductance layout critical for dv/dt immunity

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~120–160 nC·mΩ - Balances switching and conduction loss in 300–1000 kHz DC/DC stages
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - Validated for reflow and mechanical stress in automotive-grade production
Enhanced body diode	Q_rr ≤ 10 nC, V_SD ≤ 1.2 V - Reduces reverse recovery loss vs. standard MOSFETs in synchronous rectification
High-temperature operation	Rated to 175 °C junction - Eliminates need for thermal derating in compact power modules

Applications

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, multiphase 12 V → 1.2 V conversion for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in buck converter low-side position.

Use Value: 4.1 mΩ R_DS(on) and 30–40 nC Q_g enable >95% efficiency at 50 A with minimal thermal footprint.

Use Scenario: 24 V input isolated/non-isolated DC/DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Primary-side switch in high-frequency flyback or forward topology.

Use Value: 175 °C rating and 6 kV/µs dv/dt immunity ensure stable operation under transient overvoltage and ambient heat.

Automotive ADAS Power Supply

OR-ing Diode Replacement

Use Scenario: 12 V → 5 V/3.3 V conversion for radar sensor ECU with extended temperature requirements.

IC Role / Device Role / Timing Role: Low-side switch in buck regulator powering image signal processor.

Use Value: JEDEC qualification and -55 °C to +175 °C range support ASIL-B functional safety compliance without external derating.

Use Scenario: Redundant 12 V power path in telecom shelf with hot-swap capability.

IC Role / Device Role / Timing Role: Active OR-ing FET replacing Schottky diode in back-to-back configuration.

Use Value: V_GS(th) = 1.2–2.0 V allows self-biasing control; low R_DS(on) cuts conduction loss by >70% vs. 40 mΩ diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 6.0 mΩ @ 10 V; Q_g = 42 nC; TO-220 package	Higher conduction loss and larger thermal resistance; not SMD-compatible	Select when through-hole mounting or legacy board compatibility required
STL110N3LLH6	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 48 nC; PowerFLAT 5x6 package	Lower R_DS(on) but higher gate charge; smaller footprint limits heatsinking	Select when board space is constrained and peak efficiency >96% is prioritized

Compared with IRL3803PbF, IPD04N03LB G offers lower R_DS(on) and SMD suitability; versus STL110N3LLH6, it provides superior thermal management via TO252 tab and lower Q_g-to-R_DS(on) ratio for mid-frequency designs.

Availability

IPD04N03LB G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, automotive ADAS power supplies, and OR-ing diode replacements requiring stable component supply across multi-year production cycles.

Supply support for IPD04N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 power transistor product line, designed specifically for high-efficiency, high-frequency switching applications in computing, industrial, and automotive power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPD04N03LB G supports 50 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (6 cm²) and vertical mounting in still air, leveraging its 1.3 K/W junction-to-case thermal resistance.

Can this MOSFET be driven directly from a 3.3 V microcontroller GPIO?

Yes - its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) and guaranteed turn-on at V_GS = 4.5 V make it compatible with 3.3 V drive. However, full R_DS(on) optimization requires ≥4.5 V; for 50 A operation, a dedicated gate driver is recommended to manage Q_g = 30–40 nC.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the integrated body diode has Q_rr ≤ 10 nC and V_SD ≤ 1.2 V at 50 A and 25 °C, enabling efficient synchronous rectification. Its fast recovery and low forward voltage reduce switching loss compared to external Schottky diodes in 300–1000 kHz designs.

Does IPD04N03LB G have lead-free and RoHS-compliant construction?

Yes - the device features Pb-free lead plating and complies with RoHS Directive 2011/65/EU. It is also qualified per JEDEC J-STD-20 and JESD22 standards for moisture sensitivity level (MSL) 1 and temperature cycling robustness.

IPD04N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD04N03LB G FAQ

1.How can I place an order for IPD04N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD04N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD04N03LB G reliable?

The price and inventory of IPD04N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD04N03LB G is usually 5 days.

3.What payment methods are accepted for IPD04N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD04N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD04N03LB G?

IPD04N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD04N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD04N03LB G?

For technical support, including IPD04N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD04N03LB G requirements.

6.How does Aetrix verify that IPD04N03LB G is sourced from the original manufacturer or authorized distributors?

All IPD04N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD04N03LB G meets industry standards.

7.What is the process for return or replacement of IPD04N03LB G?

All IPD04N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPD04N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD04N03LB G part is unused and in its original packaging.

Return procedure for IPD04N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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