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Infineon Technologies IPD052N10NF2SATMA1
- Part No.:
- IPD052N10NF2SATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD052N10NF2SATMA1.pdf
- Description:
- MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,997
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Product details
Overview
IPD052N10NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode Power MOSFET in DPAK (PG-TO252-3) package, rated for 100 V VDS, 5.2 mΩ RDS(on) max at VGS = 10 V, and 118 A continuous drain current at TC = 25 °C. It features 100% avalanche-tested ruggedness, low Qg (51 nC), and integrated body diode with 247 nC Qrr, optimized for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the IPD052N10NF2SATMA1 datasheet, IPD052N10NF2SATMA1 pinout, IPD052N10NF2SATMA1 application, or IPD052N10NF2SATMA1 equivalent, key selection criteria include its 1.0 °C/W RthJC, 67 nC Qoss, 4.8 V gate plateau voltage, and DPAK thermal performance under high-pulsed load conditions in industrial power stages.
Technical Context
This StrongIRFET™ 2 device uses trench-gate silicon technology to achieve low conduction loss and fast switching with controlled EMI. Its gate threshold voltage (2.2–3.8 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while the 1.7 Ω typical gate resistance supports stable gate drive without external damping.
The MOSFET integrates a robust intrinsic body diode with 37 ns trr and 0.93 V forward drop at 70 A, enabling synchronous rectification and freewheeling in hard-switched topologies. Thermal design leverages the exposed drain tab for direct PCB copper heatsinking, achieving 150 W Ptot at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 48 V bus systems with 2× safety margin against transients |
| RDS(on), max | 5.2 mΩ at VGS = 10 V - Enables <1.5 W conduction loss at 70 A, critical for high-current power stages |
| Qg | 51 nC - Low gate charge reduces driver power demand and enables >500 kHz switching in LLC resonant converters |
| Qoss | 67 nC - Minimizes capacitive turn-off energy loss in high-frequency hard-switched applications |
| trr | 37 ns - Fast reverse recovery limits shoot-through risk and diode switching loss in half-bridge configurations |
| RthJC | 1.0 °C/W - Enables direct thermal coupling to PCB copper, supporting >100 W sustained dissipation with minimal heatsink |
| ID, cont | 118 A at TC = 25 °C - Supports high-current motor phase legs and battery protection circuits without paralleling |
Pinout & Package
IPD052N10NF2SATMA1 uses the PG-TO252-3 (DPAK) package with an exposed drain tab for thermal and electrical connection. The package conforms to JEDEC MO-235 and features Pb-free, halogen-free plating per IEC61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives gate drive signal; requires ≤10 V logic-compatible drive with 1.7 Ω internal gate resistance |
| Pin 2 / Tab (Drain) | Main power output terminal | Exposed metal tab serves as primary drain connection and thermal path to PCB copper area |
| Pin 3 (Source) | Reference node | Serves as return path for load current and gate drive reference; ties to power ground plane |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse EAS = 100 mJ, enabling robust operation in inductive switching faults without derating |
| Low Qgd/Qg ratio | 10.7/51 nC = 0.21 - Improves Miller immunity and enables stable operation with high dv/dt in motor drives |
| Optimized body diode | Qrr = 247 nC, trr = 37 ns - Reduces commutation loss and EMI in synchronous rectifier and freewheeling roles |
| JEDEC-qualified reliability | Qualified per JESD47 and AEC-Q101 stress tests - suitable for industrial and automotive-grade power modules |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Rectifier |
|---|---|
|
Use Scenario: High-current BLDC motor phase leg in 48 V e-bike controller with PWM switching at 20–40 kHz. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles bidirectional current during PWM dead-time and regenerative braking. Use Value: 5.2 mΩ RDS(on) and 118 A rating eliminate need for paralleling; 37 ns trr prevents shoot-through during body-diode commutation. |
Use Scenario: Secondary-side synchronous rectifier in 12 V/100 A isolated DC-DC converter for server power supply. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch with precise timing control. Use Value: 0.93 V VSD and 247 nC Qrr reduce conduction and switching losses by >35% vs. discrete diode solution at full load. |
| Industrial Battery Protection | High-Efficiency LED Driver |
|
Use Scenario: Bidirectional current sensing and overcurrent cutoff in 36–48 V Li-ion battery pack management system. IC Role / Device Role / Timing Role: Main power FET in charge/discharge path; configured as high-side or low-side switch with current-sense resistor. Use Value: 100 V VDS withstands load-dump transients; 100 mJ EAS rating ensures survival during short-circuit events without fuse intervention. |
Use Scenario: Buck-type constant-current LED driver for high-bay lighting (100 W, 350 mA output). IC Role / Device Role / Timing Role: Primary switching element operating at 250 kHz with 100% duty-cycle capability during dimming. Use Value: 1.0 °C/W RthJC allows direct PCB heatsinking; 51 nC Qg enables efficient gate driving with low-power IC drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N10F7 | RDS(on) = 4.8 mΩ (lower), Qg = 56 nC (higher), TO-252 package, no avalanche rating specified | Better conduction loss but higher gate drive loss; not qualified for repetitive avalanche stress | Select when conduction loss dominates and fault energy is externally clamped |
| IXTP110N10L2 | RDS(on) = 5.5 mΩ (slightly higher), Qg = 42 nC (lower), TO-220 package, 100% UIS tested | Lower gate charge improves switching efficiency; larger TO-220 footprint increases board area and thermal resistance | Select when gate drive power is constrained and PCB space permits larger package |
Compared with STL110N10F7 and IXTP110N10L2, IPD052N10NF2SATMA1 delivers balanced trade-offs: best-in-class avalanche ruggedness, DPAK thermal advantage over TO-220, and lower Qg than ST's part-making it optimal for compact, fault-tolerant industrial power stages.
Availability
IPD052N10NF2SATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and battery protection systems requiring stable component supply and long-term lifecycle support.
Supply support for IPD052N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to the StrongIRFET™ 2 family-designed specifically for high-current, high-reliability power conversion in industrial automation, renewable energy inverters, and electric mobility subsystems.
FAQ
What is the maximum safe operating temperature for IPD052N10NF2SATMA1?
The junction temperature must not exceed 175 °C under any operating condition. At TC = 100 °C, the continuous drain current derates to 85 A (VGS = 10 V). Thermal design must account for RthJC = 1.0 °C/W and PCB copper area-minimum 6 cm² recommended for RthJA = 50 °C/W performance.
Can IPD052N10NF2SATMA1 be used in synchronous rectification without external diode snubbing?
Yes. Its body diode has characterized trr = 37 ns and Qrr = 247 nC at 70 A, enabling clean commutation in buck and flyback topologies up to 300 kHz. No external snubber is required if gate timing avoids overlap during diode conduction, and layout minimizes source inductance.
Is the DPAK drain tab electrically isolated from the PCB mounting surface?
No-the drain tab is metallurgically bonded to Pin 2 and is electrically connected to the drain terminal. When mounted on PCB copper, the tab forms both the primary thermal path and the drain node. Electrical isolation requires insulating thermal pads or dielectric substrates, which increase RthJC by ≥0.5 °C/W.
Does IPD052N10NF2SATMA1 support 3.3 V logic-level gate drive?
No. With VGS(th) = 2.2–3.8 V and RDS(on) = 6.6 mΩ at VGS = 6 V, full enhancement requires ≥10 V for rated 5.2 mΩ performance. Using 3.3 V risks excessive conduction loss (>20 mΩ) and thermal runaway; a level-shifting gate driver is mandatory for 3.3 V MCU interfaces.
IPD052N10NF2SATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- StrongIRFET™ 2
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta), 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.2mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id:
- 3.8V @ 84µA
- Gate Charge (Qg) (Max) @ Vgs:
- 76 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3600 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD052N10NF2SATMA1 FAQ
1.How can I place an order for IPD052N10NF2SATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD052N10NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD052N10NF2SATMA1 reliable?
The price and inventory of IPD052N10NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD052N10NF2SATMA1 is usually 5 days.
3.What payment methods are accepted for IPD052N10NF2SATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD052N10NF2SATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD052N10NF2SATMA1?
IPD052N10NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD052N10NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD052N10NF2SATMA1?
For technical support, including IPD052N10NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD052N10NF2SATMA1 requirements.
6.How does Aetrix verify that IPD052N10NF2SATMA1 is sourced from the original manufacturer or authorized distributors?
All IPD052N10NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD052N10NF2SATMA1 meets industry standards.
7.What is the process for return or replacement of IPD052N10NF2SATMA1?
All IPD052N10NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD052N10NF2SATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD052N10NF2SATMA1 part is unused and in its original packaging.
Return procedure for IPD052N10NF2SATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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