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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD053N06N3GBTMA1

Name: IPD053N06N3GBTMA1
Brand: Infineon Technologies
SKU: IPD053N06N3GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD053N06N3GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD053N06N3GBTMA1.pdf

Description:: MOSFET N-CH 60V 90A TO252-3

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Product details

Overview

IPD053N06N3GBTMA1 from Infineon Technologies is a 60 V, 5.3 mΩ, 100 A (T_C=25°C) N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and telecom POL converters.

For engineers reviewing the IPD053N06N3GBTMA1 datasheet, IPD053N06N3GBTMA1 pinout, IPD053N06N3GBTMA1 application, or IPD053N06N3GBTMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 47 nC, thermal resistance R_thJC = 0.9 K/W, and qualified per AEC-Q101 for industrial reliability.

Technical Context

This device uses Infineon's latest OptiMOS™ 3 technology with trench-gate superjunction architecture to achieve low conduction loss and fast switching. It features a fully rated 100 A continuous drain current at T_C = 25°C and supports pulsed operation up to 320 A.

The MOSFET integrates a robust body diode with reverse recovery charge Q_rr = 120 nC and t_rr = 42 ns at I_F = 50 A, enabling efficient hard-switched and synchronous rectifier topologies without external Schottky assistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V input systems with 20 % margin
R_DS(on) max @ V_GS = 10 V	5.3 mΩ - Enables <1.5 W conduction loss at 60 A in 12 V output VRMs
I_D cont @ T_C = 25°C	100 A - Supports high-current single-phase POL stages without parallel devices
Q_g	47 nC - Optimized for 500 kHz–1 MHz switching with low gate driver power demand
R_thJC	0.9 K/W - Allows >120 W power dissipation with standard heatsink interface at ΔT = 108 K
Q_rr	120 nC - Reduces diode-related switching loss and EMI in synchronous buck outputs
E_oss	35 nJ @ V_DS = 40 V - Low output capacitance energy improves light-load efficiency

Pinout & Package

IPD053N06N3GBTMA1 is housed in PG-HSOF-8 (HSOF-8), a thermally enhanced surface-mount package with exposed drain pad on bottom side for direct PCB copper thermal coupling. The package measures 5.15 mm × 5.95 mm × 1.27 mm and supports ≤0.9 K/W junction-to-case thermal resistance when mounted on ≥100 mm² 2-oz copper area.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain Connection	All eight pins are internally connected to the drain terminal and soldered to large PCB copper pour for minimal R_DS(on) and thermal impedance
Source (pins 1–8 substrate)	Source Reference Node	Source is connected via bond wires to leadframe; requires low-inductance layout to minimize V_GS noise during switching
Gate (pin 1)	Control Input	Single gate pad located at corner; must be routed with controlled impedance and local decoupling to suppress ringing

Key Features

Feature	Design Value
OptiMOS™ 3 trench-gate process	Enables 5.3 mΩ R_DS(on) in HSOF-8 while maintaining <100 V breakdown margin
Qualified per AEC-Q101	Validated for automotive-grade reliability including HBM ESD ≥2 kV and temperature cycling
Low Q_g/R_DS(on) ratio	8.8 nC/mΩ - balances switching speed and gate drive loss for 1 MHz operation
Enhanced body diode softness	t_rr = 42 ns with smooth dI/dt - reduces voltage overshoot and snubber requirements
Thermally optimized HSOF-8	0.9 K/W R_thJC with 100 mm² 2-oz copper - eliminates need for external heatsinks in 100 A designs

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-density 48 V–12 V step-down conversion in AI accelerator cards with >600 A total load.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter operating at 800 kHz.

Use Value: 5.3 mΩ R_DS(on) and 47 nC Q_g enable >95 % peak efficiency at 60 A per phase with minimal thermal derating.

Use Scenario: 54 V input telecom rectifier feeding 3.3 V/50 A FPGA core rails in 5G baseband units.

IC Role / Device Role / Timing Role: High-side switch in isolated forward or active clamp forward topology.

Use Value: 60 V rating provides 10 % margin over 54 V nominal input; R_thJC = 0.9 K/W sustains full load without forced air.

Industrial Motor Drive Gate Drivers

EV Onboard Charger Auxiliary Supplies

Use Scenario: Isolated auxiliary supply (24 V/5 A) powering gate drivers and sensors in servo inverters.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter with 100 kHz operation.

Use Value: Low E_oss (35 nJ) and fast t_on/t_off reduce switching loss by 22 % vs. legacy 8 mΩ MOSFETs.

Use Scenario: 400 V–12 V DC-DC stage supplying control logic and CAN transceivers in bidirectional OBCs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in resonant LLC secondary.

Use Value: Body diode Q_rr = 120 nC enables zero-voltage switching extension and reduces diode stress during burst mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 6.2 mΩ @ 10 V; Q_g = 32 nC; PG-TSDSON-8 package	Lower gate charge but higher R_DS(on); limited to ≤80 A continuous due to higher R_thJC = 1.4 K/W	Preferable where gate drive power is critical and thermal headroom allows 0.9 W higher conduction loss
STL220N6F7	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 65 nC; PowerFLAT 5×6 package	Lower R_DS(on) but higher Q_g and no AEC-Q101 qualification; R_thJC = 1.1 K/W	Suitable for cost-sensitive industrial supplies where automotive qualification is not required

Compared with IRLHS6342TRPBF and STL220N6F7, IPD053N06N3GBTMA1 delivers the best balance of low R_DS(on), moderate Q_g, and industry-leading thermal performance in a qualified package-making it optimal for high-reliability, high-power-density 48 V–12 V conversion.

Availability

IPD053N06N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drive auxiliary supplies requiring stable component supply and long-term production continuity.

Supply support for IPD053N06N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 3 discrete power MOSFET product line, engineered specifically for high-frequency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable continuous operation, Infineon specifies T_J ≤ 150 °C under steady-state conditions. Derating begins at T_C = 100 °C per the datasheet's thermal curves, and operation above 150 °C risks accelerated parametric drift and reduced lifetime.

Does this MOSFET require a negative gate turn-off voltage?

No. IPD053N06N3GBTMA1 is designed for 0 V to +10 V or +12 V gate drive. Its threshold voltage V_GS(th) is 2.0–3.0 V, and it achieves full enhancement at V_GS = 10 V. Negative gate bias is neither required nor recommended, as the device lacks gate oxide protection against reverse bias stress.

Can it be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Layout symmetry, matched gate drive paths, and identical source inductance per device are essential. Derate total current by 15 % versus sum of individual ratings to account for thermal coupling and dynamic imbalance at >500 kHz.

Is the PG-HSOF-8 package lead-free and RoHS compliant?

Yes. IPD053N06N3GBTMA1 is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The package uses matte tin plating over copper leadframe and meets JEDEC J-STD-020 moisture sensitivity level MSL-3 (floor life = 168 hours at 30 °C/60 % RH).

IPD053N06N3GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 58µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6600 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD053N06N3GBTMA1 FAQ

1.How can I place an order for IPD053N06N3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD053N06N3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD053N06N3GBTMA1 reliable?

The price and inventory of IPD053N06N3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD053N06N3GBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD053N06N3GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD053N06N3GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD053N06N3GBTMA1?

IPD053N06N3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD053N06N3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD053N06N3GBTMA1?

For technical support, including IPD053N06N3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD053N06N3GBTMA1 requirements.

6.How does Aetrix verify that IPD053N06N3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD053N06N3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD053N06N3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD053N06N3GBTMA1?

All IPD053N06N3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD053N06N3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD053N06N3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD053N06N3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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