Infineon Technologies IPD053N08N3GBTMA1

Overview

IPD053N08N3GBTMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET with 80 V V_DS, 5.3 mΩ R_DS(on) at V_GS = 10 V, 90 A continuous drain current, and PG-TO252-3 (D-Pak) package. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and synchronous rectifiers operating up to 175 °C junction temperature.

For engineers reviewing the IPD053N08N3GBTMA1 datasheet, IPD053N08N3GBTMA1 pinout, IPD053N08N3GBTMA1 application, or IPD053N08N3GBTMA1 equivalent, key selection criteria include gate charge × R_DS(on) figure of merit, thermal resistance (R_thJC = 1 K/W), avalanche energy rating (E_AS = 190 mJ), and diode reverse recovery performance (t_rr = 72 ns).

Technical Context

This OptiMOS®3 device uses trench-gate superjunction technology optimized for high-frequency switching and low conduction loss. Its gate threshold voltage (2.0–3.5 V) enables robust TTL/CMOS-level drive compatibility, while its low Q_gd/Q_gs ratio (≈0.6) supports fast, controllable turn-on/turn-off transitions.

The integrated body diode exhibits low forward voltage (V_SD = 1.0–1.2 V at 90 A) and controlled reverse recovery (Q_rr = 130 nC), making it suitable for synchronous rectification in buck converters and half-bridge topologies without external Schottky replacement.

Key Specifications

Pinout & Package

IPD053N08N3GBTMA1 is housed in a PG-TO252-3 (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads and is RoHS-compliant with halogen-free construction per IEC61249-2-21.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB053N08N3 G, this D-Pak variant trades thermal margin for compactness and lower assembly cost; versus IRL8721PBF, it delivers significantly lower conduction loss at 10 V drive but requires compatible gate voltage levels.

Availability

IPD053N08N3GBTMA1 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, industrial motor drives, and server VRMs requiring stable component supply and long-term production continuity.

Supply support for IPD053N08N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®3 family-designed specifically for high-efficiency, high-frequency power conversion in space-constrained applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum safe operating voltage for IPD053N08N3GBTMA1 in repetitive avalanche conditions?

The device is rated for V_DS = 80 V under static conditions and qualified for single-pulse avalanche energy (E_AS = 190 mJ). Repetitive avalanche is not characterized or guaranteed per datasheet; sustained operation above 80 V risks irreversible breakdown. Designers must implement clamping or snubbing circuits to limit V_DS within rating during switching transients.

Can IPD053N08N3GBTMA1 be driven directly from a 3.3 V microcontroller GPIO?

No. Its gate threshold voltage range is 2.0–3.5 V, but full enhancement requires ≥10 V for specified R_DS(on). At 3.3 V, R_DS(on) exceeds 25 mΩ, causing excessive conduction loss and thermal runaway at >10 A. A dedicated gate driver (e.g., IRS2001) or level-shifting circuit is mandatory for reliable operation.

Is the body diode suitable for reverse recovery in hard-switched PFC stages?

The body diode has t_rr = 72 ns and Q_rr = 130 nC at 100 A/µs, making it usable in moderate-frequency (≤100 kHz) boost PFC, but not recommended for >200 kHz or high-di/dt (>200 A/µs) applications. For critical PFC designs, a co-packaged SiC Schottky or external ultrafast diode is advised.

How does the PG-TO252-3 package affect PCB layout for thermal management?

The exposed drain pad must be connected to a minimum 6 cm² copper area on the top layer (single-layer) or internal plane via ≥6 thermal vias (0.3 mm diameter) to achieve R_thJA ≈ 50 K/W. Insufficient copper or missing vias raise junction temperature beyond 175 °C at 90 A, triggering thermal shutdown or parametric drift.