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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD05N03LA G

Name: IPD05N03LA G
Brand: Infineon Technologies
SKU: IPD05N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD05N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD05N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO252-3

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Product details

Overview

IPD05N03LA G from Infineon Technologies is an N-channel logic-level MOSFET in PG-TO252-3-11 package, rated for 25 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 5.1 mΩ R_DS(on) (max) at V_GS = 10 V. It features 175 °C maximum junction temperature, 1.6 K/W thermal resistance (junction-to-case), and is optimized for high-frequency DC/DC converters with low gate charge × R_DS(on) figure of merit.

For engineers reviewing the IPD05N03LA G datasheet, IPD05N03LA G pinout, IPD05N03LA G application, or IPD05N03LA G equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 300 mJ single-pulse avalanche energy rating, 6.7–8.4 mΩ R_DS(on) at 4.5 V (SMD version), reverse diode forward voltage ≤1.2 V at 50 A, and JEDEC-qualified reliability for power conversion systems.

Technical Context

This OptiMOS®2 device uses a trench-gate superjunction structure enabling low R_DS(on) and fast switching with C_iss = 2413–3110 pF and Q_g = 19–25 nC. Its gate plateau voltage is 3.2 V, supporting stable turn-on under logic-level control.

Thermal design is enabled by direct die-to-case conduction path (R_thJC = 1.6 K/W) and specified performance on 6 cm² PCB copper area. The integrated body diode supports synchronous rectification with Q_rr ≤10 nC and dv/dt ruggedness up to 6 kV/µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for low-voltage synchronous buck stages
R_DS(on) max @ V_GS=10 V	5.1 mΩ - Enables <1 W conduction loss at 50 A in compact SMD layout
I_D continuous @ T_C=25 °C	50 A - Limited by bondwire; supports high-current POL converters
E_AS	300 mJ - Robustness against inductive switching stress without external snubber
Q_g	19–25 nC - Low total gate charge enables efficient 500 kHz–1 MHz operation
T_j max	175 °C - Extended thermal margin for sealed or high-ambient industrial enclosures
dv/dt ruggedness	6 kV/µs - Immunity to false turn-on in hard-switched topologies

Pinout & Package

IPD05N03LA G is housed in PG-TO252-3-11 (D-Pak) package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Logic-level input requiring ≤4.5 V for full enhancement; low C_iss reduces driver loading
Pin 2 (D)	Drain terminal / thermal pad	Electrically and thermally connected to exposed copper tab; must be soldered to PCB ground plane for R_thJC = 1.6 K/W
Pin 3 (S)	Source terminal	Reference node for gate drive; low-inductance routing critical for EMI control in high-dI/dt applications

Key Features

Feature	Design Value
Logic-level gate drive	Full enhancement at V_GS = 4.5 V enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers
Low FOM (Q_g × R_DS(on))	Typical 125 nC·mΩ - balances switching loss and conduction loss for >500 kHz DC/DC designs
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 - validated for reflow, humidity, and temperature cycling in production environments
Integrated robust body diode	Q_rr ≤10 nC and 6 kV/µs dv/dt rating support synchronous rectification without external Schottky

Applications

Server VRMs

Industrial PLC Power Supplies

Use Scenario: 12 V input to 1 V/100 A output step-down converter in rack-mounted server CPU voltage regulator modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 600–800 kHz with 4.5 V gate drive from multiphase controller.

Use Value: 5.1 mΩ R_DS(on) limits conduction loss to <0.5 W; 300 mJ E_AS withstands transient overloads during load-step events.

Use Scenario: 24 V DC input to 5 V/20 A auxiliary supply in programmable logic controller backplane.

IC Role / Device Role / Timing Role: Low-side switch in isolated flyback secondary synchronous rectifier stage.

Use Value: 1.2 V V_SD at 50 A reduces diode conduction loss by >40% vs. discrete Schottky; 175 °C T_j rating ensures operation in sealed cabinet environments.

Automotive ADAS Camera Modules

Telecom DC/DC Brick Converters

Use Scenario: 12 V to 3.3 V point-of-load converter powering image sensor and ISP in rear-view camera ECU.

IC Role / Device Role / Timing Role: Primary switch in compact 2-layer PCB buck converter with strict EMI requirements.

Use Value: 6 kV/µs dv/dt immunity prevents false turn-on from coupled noise; 25 nC Q_g allows clean gate waveform with minimal gate resistor.

Use Scenario: 48 V to 12 V intermediate bus converter in telecom shelf power system.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology.

Use Value: 1.6 K/W R_thJC enables >60 W dissipation with passive heatsinking; JEDEC qualification ensures long-term field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 4.8 mΩ @ 4.5 V; smaller 2×2 mm PQFN package; lower I_D (22 A)	Better suited for space-constrained, lower-current POL; lacks 300 mJ E_AS rating	Select when board area is critical and peak current ≤25 A
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 4.5 V; TO-263 package; higher Q_g (42 nC); 150 °C T_j max	Higher efficiency at high current but slower switching; requires stronger gate driver	Select when conduction loss dominates and switching frequency <300 kHz

Compared with IRLHS6342TRPBF and STL220N3LLH6, IPD05N03LA G uniquely balances 50 A current capability, 4.5 V logic drive, 300 mJ avalanche robustness, and 175 °C operation-making it optimal for high-reliability, medium-frequency DC/DC where thermal margin and transient resilience are prioritized.

Availability

IPD05N03LA G is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, automotive ADAS camera modules, and telecom DC/DC brick converters requiring stable component supply across multi-year production cycles.

Supply support for IPD05N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS®2 power transistor family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, industrial, and telecom infrastructure where logic-level drive, thermal resilience, and avalanche ruggedness are mandatory.

FAQ

What is the maximum safe operating voltage for IPD05N03LA G in continuous DC applications?

The absolute maximum drain-source voltage is 25 V, with V_(BR)DSS tested at 25 V minimum (typ. 27 V). Operation above 25 V risks avalanche breakdown even at room temperature. For reliable margin, design V_DS peak ≤22 V in circuits with voltage spikes or ringing.

Can IPD05N03LA G be used as a synchronous rectifier with zero-volt gate drive?

No-it is not a depletion-mode device. Gate must be actively driven to ≥4.5 V for full enhancement. For synchronous rectification, it requires a dedicated gate driver referenced to source potential, such as TI UCC27201 or Infineon 2EDN7524R.

How does the thermal performance differ between IPD05N03LA G and IPF05N03LA G?

Both share identical die and R_thJC = 1.6 K/W, but IPF05N03LA G uses PG-TO252-3-23 package with different leadframe geometry. That variant exhibits slightly higher R_thJA (75 K/W vs. 50 K/W on 6 cm² copper) due to reduced thermal pad solder coverage-verified in Infineon's Rev. 2.2 datasheet Figure 2.

Is the body diode suitable for reverse recovery in hard-switched PFC stages?

No-the body diode is optimized for synchronous rectification, not PFC. Its Q_rr ≤10 nC and soft recovery are insufficient for 50–100 kHz boost PFC; use dedicated ultrafast diodes or cascode GaN for that application.

IPD05N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3110 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD05N03LA G FAQ

1.How can I place an order for IPD05N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD05N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD05N03LA G reliable?

The price and inventory of IPD05N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD05N03LA G is usually 5 days.

3.What payment methods are accepted for IPD05N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD05N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD05N03LA G?

IPD05N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD05N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD05N03LA G?

For technical support, including IPD05N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD05N03LA G requirements.

6.How does Aetrix verify that IPD05N03LA G is sourced from the original manufacturer or authorized distributors?

All IPD05N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD05N03LA G meets industry standards.

7.What is the process for return or replacement of IPD05N03LA G?

All IPD05N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPD05N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD05N03LA G part is unused and in its original packaging.

Return procedure for IPD05N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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