Infineon Technologies IPD05N03LB G

Overview

IPD05N03LB G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 4.8 mΩ R_DS(on) (max at V_GS=10 V, I_D=60 A), and 90 A continuous drain current at T_C=25 °C. It features 175 °C maximum junction temperature, low gate charge (Q_g = 19–25 nC), and optimized figure-of-merit (Q_g × R_DS(on)) for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the IPD05N03LB G datasheet, IPD05N03LB G pinout, IPD05N03LB G application, or IPD05N03LB G equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), robust avalanche energy rating (E_AS = 120 mJ), thermal resistance (R_thJC = 1.6 K/W), and integrated body diode with Q_rr = 15 nC for synchronous rectification.

Technical Context

This OptiMOS®2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching dynamics. Its gate threshold voltage (1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

The MOSFET supports high-current pulsed operation (I_D,pulse = 420 A) and exhibits stable R_DS(on) over temperature (3.9–4.8 mΩ at 100 °C), making it suitable for thermally constrained PCB layouts with minimal copper area (6 cm²).

Key Specifications

Pinout & Package

IPD05N03LB G is housed in a surface-mount PG-TO252-3-11 (D-Pak) package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard TO252 configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3803PbF and STL110N3LLH6, IPD05N03LB G delivers superior Q_g × R_DS(on) balance and lower thermal resistance-making it optimal for space-constrained, high-efficiency 24 V systems where gate drive voltage is limited to 5 V or less.

Availability

IPD05N03LB G is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and automotive body electronics requiring stable component supply across production lifecycles.

Supply support for IPD05N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to the OptiMOS®2 family-designed specifically for high-current, low-voltage logic-level switching in automotive and industrial power stages where thermal density and gate drive simplicity are critical.

FAQ

Is IPD05N03LB G suitable for high-frequency switching above 300 kHz?

Yes. With t_r = 7–10 ns, t_f = 4.6–7 ns, and Q_g = 19–25 nC, it supports efficient operation up to 500 kHz in hard-switched topologies. Layout must minimize gate loop inductance and use low-ESR gate resistors (e.g., 2.7 Ω) to avoid ringing.

What is the recommended PCB layout for thermal performance?

Mount the exposed drain pad directly to ≥6 cm² of 70 µm thick copper on FR4 (single layer), oriented vertically in still air. Use ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting the pad to inner or backside ground planes to achieve R_thJA ≈ 50 K/W.

Does IPD05N03LB G have avalanche capability, and how is it rated?

Yes. It is fully rated for repetitive and single-pulse avalanche with E_AS = 120 mJ (I_D = 90 A, R_GS = 25 Ω). This enables reliable operation in inductive switching without external snubbers in applications like solenoid drivers and relay replacements.

Can IPD05N03LB G be used in high-side configurations with bootstrap gate drive?

Yes. Its V_GS rating of ±20 V and V_BR(DSS) = 30 V support bootstrap-based high-side operation in half-bridges. Ensure gate voltage remains within 0–15 V relative to source, and select bootstrap capacitor and diode to sustain V_GS > 4.5 V during full-duty-cycle conditions.