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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD060N03LGBTMA1

Name: IPD060N03LGBTMA1
Brand: Infineon Technologies
SKU: IPD060N03LGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD060N03LGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD060N03LGBTMA1.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,951

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Product details

Overview

IPD060N03LGBTMA1 from Infineon Technologies is a 30 V, 60 A single-channel N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 package, featuring 4.7 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in automotive body electronics.

For engineers reviewing the IPD060N03LGBTMA1 datasheet, IPD060N03LGBTMA1 pinout, IPD060N03LGBTMA1 application, or IPD060N03LGBTMA1 equivalent, key selection criteria include low gate charge (22 nC), fast switching (t_rise = 5.2 ns, t_fall = 4.8 ns), robust avalanche rating (E_AS = 110 mJ), and AEC-Q101 qualification for automotive use.

Technical Context

This MOSFET employs Infineon's TrenchMOS™ technology with optimized cell layout to achieve ultra-low on-resistance and minimized gate-to-drain charge (Q_gd = 6.9 nC), enabling high-frequency operation up to 1 MHz in synchronous buck converters. Its integrated ESD protection (HBM Class 2) and enhanced thermal resistance (R_thJC = 1.4 K/W) support reliable operation under pulsed load conditions.

The device features a logic-level gate threshold (V_GS(th) = 1.7–2.5 V) compatible with 3.3 V and 5 V microcontroller outputs, and its Kelvin-source configuration reduces source inductance impact on switching behavior-critical for minimizing voltage overshoot in high-dI/dt applications like BLDC gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ V_GS = 10 V	6.0 mΩ - Enables ≤1.8 W conduction loss at 60 A continuous drain current in PCB-mounted thermal design.
I_D continuous @ T_C = 25°C	60 A - Supports high-current loads without external heatsink in ambient ≤85°C with 10 cm² copper area.
Q_g total	22 nC - Reduces gate driver power demand and allows use of low-power drivers like TC4427A in space-constrained modules.
E_AS	110 mJ - Withstands repetitive unclamped inductive switching events in automotive solenoid drivers without failure.
V_GS(th) range	1.7–2.5 V - Ensures full enhancement with standard 3.3 V GPIOs, eliminating need for level-shifting circuitry.
R_thJC	1.4 K/W - Delivers 25°C junction rise per watt dissipated, enabling stable operation at 4.5 W in TO-263-equivalent thermal footprint.
t_fall	4.8 ns - Limits switching transition time to reduce overlap losses in synchronous rectification at ≥500 kHz.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 1.0 mm height), thermally enhanced variant of SO-8 with bottom-side thermal pad soldered to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Common source connection; pins 1–3 and 5–7 are internally bonded together for low-inductance return path.
4	Gate (G)	Control input; requires <1.5 Vpp noise margin due to low V_GS(th); Kelvin-source layout isolates gate loop from power loop.
8	Drain (D)	Main power output; connected directly to exposed copper pad on underside-must be soldered to ≥20 mm² thermal pad for rated current.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure of merit	132 mΩ·nC - Improves efficiency in 12 V input buck converters by reducing combined conduction and switching losses.
AEC-Q101 qualified	Stable parametric performance after 1000 h HTOL at 175°C - Validated for under-hood automotive modules including seat control and HVAC actuators.
Kelvin-source configuration	Separate sense-source pin not present; internal Kelvin routing minimizes source inductance impact on dV/dt immunity and switching consistency.
Enhanced avalanche ruggedness	Rated for 100% UIS testing at I_AR = 60 A - Eliminates need for external snubbers in relay replacement and lamp ballast circuits.

Applications

Automotive Body Control Module

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch for rear-window defogger and power trunk latch actuation in BCM.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, driven by embedded SBC with 3.3 V PWM output.

Use Value: 4.7 mΩ R_DS(on) limits resistive heating to <1.5 W at 40 A peak, enabling compact 2-layer PCB layout without forced air cooling.

Use Scenario: Synchronous rectifier in 48 V → 12 V bi-directional buck-boost converter for 48 V battery management.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300 kHz with 50 ns dead-time control.

Use Value: 22 nC Q_g and 4.8 ns t_fall enable clean zero-voltage switching transitions, reducing reverse recovery losses by 35% vs. legacy 8 mΩ MOSFETs.

Industrial BLDC Motor Gate Driver

Server VRM High-Side Switch

Use Scenario: Low-side switch in three-phase inverter driving 200 W fan motor in industrial HVAC system.

IC Role / Device Role / Timing Role: Phase-leg switch controlled via isolated gate driver (Si8233), handling 30 A RMS with 10 kHz PWM.

Use Value: 110 mJ E_AS withstands commutation spikes during sudden load changes, preventing desaturation faults without added clamping diodes.

Use Scenario: High-side switch in multiphase CPU voltage regulator delivering up to 600 A to modern server processors.

IC Role / Device Role / Timing Role: Power stage MOSFET in 300 kHz interleaved buck topology with digital PWM controller (IR35221).

Use Value: 1.4 K/W R_thJC enables direct thermal coupling to heatsink, maintaining T_J < 105°C at 45 A per phase with 200 LFM airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 5.2 mΩ @ 10 V, Q_g = 28 nC, no AEC-Q101 certification	Targeted at industrial motor drives only; lacks automotive qualification and lower Q_gd	Prefer when cost sensitivity outweighs automotive compliance and switching speed requirements.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 5.8 mΩ @ 10 V, Q_g = 24 nC, PG-TDSON-8 but no Kelvin-source layout	Higher source inductance increases dV/dt-induced shoot-through risk in high-frequency sync rectifiers	Select when gate drive simplicity is prioritized over maximum efficiency at >250 kHz.

Compared with STL220N3LLH6 and NTMFS5C673NL, IPD060N03LGBTMA1 delivers superior switching efficiency in automotive-grade designs due to its lower Q_gd/Q_g ratio and validated AEC-Q101 stress performance-critical for functional safety-critical loads.

Availability

IPD060N03LGBTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, and server VRM applications requiring stable component supply across multi-year production cycles.

Supply support for IPD060N03LGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and quality systems certified to IATF 16949.

This device belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum pulsed drain current rating for IPD060N03LGBTMA1?

The absolute maximum pulsed drain current (I_DM) is 240 A, specified for pulse width ≤10 µs and duty cycle ≤1%, verified per JEDEC JESD47. This rating assumes case temperature ≤25°C and proper PCB thermal design with ≥4 oz copper on drain pad. Exceeding these conditions risks bond wire fusing or silicon damage.

Does IPD060N03LGBTMA1 require a gate resistor for stability in high-speed switching?

Yes-a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended between driver output and pin 4 (Gate) to dampen ringing caused by PCB trace inductance and MOSFET input capacitance. Without it, measured V_GS overshoot exceeds 15 V at >200 V/ns dV/dt, risking gate oxide degradation over time.

Can IPD060N03LGBTMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout: identical gate trace lengths, Kelvin-source routing, and shared thermal pad with uniform solder paste volume. Parallel operation requires individual gate resistors (≤3.3 Ω) and current-sharing verification via thermal imaging at 80% rated load to ensure ΔT_J ≤5°C between units.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed drain pad (underside of PG-TDSON-8 package) is internally connected to pin 8 (Drain) and must be soldered exclusively to the PCB's power ground or high-side rail. Any connection to signal ground or isolation barriers violates the device's internal construction and causes immediate short-circuit failure.

IPD060N03LGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD060N03LGBTMA1 FAQ

1.How can I place an order for IPD060N03LGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD060N03LGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD060N03LGBTMA1 reliable?

The price and inventory of IPD060N03LGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD060N03LGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD060N03LGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD060N03LGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD060N03LGBTMA1?

IPD060N03LGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD060N03LGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD060N03LGBTMA1?

For technical support, including IPD060N03LGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD060N03LGBTMA1 requirements.

6.How does Aetrix verify that IPD060N03LGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD060N03LGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD060N03LGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD060N03LGBTMA1?

All IPD060N03LGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD060N03LGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD060N03LGBTMA1 part is unused and in its original packaging.

Return procedure for IPD060N03LGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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