Infineon Technologies IPD068N10N3GBTMA1

Overview

IPD068N10N3GBTMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO252-3 package, rated for 100 V V_DS, 6.8 mΩ R_DS(on) (max) at V_GS = 10 V, 90 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - optimized for high-frequency DC-DC converters and synchronous rectification in server power supplies.

For engineers reviewing the IPD068N10N3GBTMA1 datasheet, IPD068N10N3GBTMA1 pinout, IPD068N10N3GBTMA1 application, or IPD068N10N3GBTMA1 equivalent, key selection criteria include its 51–68 nC total gate charge, 3690–4910 pF input capacitance, 1 K/W junction-to-case thermal resistance, and robust 130 mJ single-pulse avalanche energy rating under I_D = 90 A conditions.

Technical Context

This OptiMOS®3 device employs a trench-gate silicon process to achieve low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency switching in hard-switched topologies. Its gate threshold voltage (2.0–3.5 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

The integrated body diode exhibits 139 nC reverse recovery charge and 73 ns t_rr at I_F = 80 A, supporting synchronous rectification without external Schottky replacement in 48 V input telecom and industrial SMPS designs.

Key Specifications

Pinout & Package

IPD068N10N3GBTMA1 uses the PG-TO252-3 (D-Pak) package with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V MOSFET applications.

Compared with STL220N10F7 and IRF3205PBF, IPD068N10N3GBTMA1 delivers superior FOM (R_DS(on) × Q_g) and tighter parameter distribution across temperature, making it optimal for thermally constrained, high-frequency industrial and telecom power stages.

Availability

IPD068N10N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPD068N10N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOS®3 power transistor family, engineered specifically for high-efficiency, high-current switching in server, telecom, and industrial power conversion systems where thermal density and reliability are critical.

FAQ

What is the maximum allowable gate-source voltage for IPD068N10N3GBTMA1?

The absolute maximum V_GS is ±20 V, but recommended operating range is −10 V to +15 V to ensure long-term reliability. Exceeding +15 V risks accelerated gate oxide degradation, while negative gate bias below −10 V may cause unintended turn-on due to parasitic capacitance coupling in high-dV/dt environments.

Can IPD068N10N3GBTMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing. Layout must ensure matched gate loop inductance and symmetrical thermal paths; derating to ≤80% of total rated current per device is advised for stability under transient loads.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated diode supports 90 A continuous forward current at T_C = 25 °C and exhibits 1 V typical V_SD at 90 A and 25 °C. Its 73 ns t_rr and soft recovery behavior reduce EMI and voltage overshoot compared to discrete Schottky alternatives in 100–300 kHz applications.

What PCB layout practices maximize thermal performance?

Use ≥6 cm² of 70 µm thick copper on the drain pad side of a 40 mm × 40 mm FR4 board, with vertical orientation in still air. Include ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting the drain pad to inner-layer ground planes, and avoid routing signal traces under the exposed tab to prevent thermal isolation.