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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD068P03L3GBTMA1

Name: IPD068P03L3GBTMA1
Brand: Infineon Technologies
SKU: IPD068P03L3GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD068P03L3GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD068P03L3GBTMA1.pdf

Description:: MOSFET P-CH 30V 70A TO252-3

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Product details

Overview

IPD068P03L3GBTMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET in PG-TO252-3 (DPAK) package, rated for -30 V V_DS, 6.8 mΩ R_DS(on) at V_GS = -10 V and I_D = -70 A, with 175 °C maximum junction temperature and 100% avalanche tested. It serves as a high-current load switch or synchronous rectifier in DC-DC converters and power management subsystems.

For engineers reviewing the IPD068P03L3GBTMA1 datasheet, IPD068P03L3GBTMA1 pinout, IPD068P03L3GBTMA1 application, or IPD068P03L3GBTMA1 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, robust avalanche energy rating (E_AS = 100 mJ), thermal resistance (R_thJC = 1.5 K/W), and halogen-free, RoHS-compliant construction.

Technical Context

This device operates as a single P-channel power MOSFET optimized for high-efficiency, high-reliability switching in automotive and industrial power supplies. Its gate threshold voltage (V_GS(th) = -1.0 to -2.0 V) enables reliable turn-on with standard logic-level drivers, while its low output capacitance (C_oss = 2090–3140 pF) supports fast switching with reduced switching losses.

The integrated body diode exhibits t_rr = 46–69 ns and Q_rr = 44 nC at I_F = -70 A, supporting efficient synchronous rectification. Thermal design is enabled by validated R_thJC = 1.5 K/W and operation up to T_j = 175 °C under JEDEC-qualified conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) max	6.8 mΩ @ V_GS = -10 V, I_D = -70 A - Enables <1 W conduction loss at 70 A continuous current
I_D cont	-70 A @ T_C = 25 °C - Supports high-current load switching without external heatsink in moderate-duty cycles
E_AS	100 mJ - Confirmed single-pulse avalanche energy tolerance for inductive load switching reliability
R_thJC	1.5 K/W - Allows direct thermal path to PCB copper or heatsink for stable high-power operation
t_rr	46–69 ns - Fast reverse recovery supports >100 kHz synchronous rectification in buck converters
Q_g	68–91 nC - Gate charge optimized for low driver power consumption with standard gate drivers

Pinout & Package

IPD068P03L3GBTMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal and electrical performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives negative gate voltage relative to source to turn on P-channel channel; requires no level-shifting for low-side switch configuration
Pin 2 (Drain)	Main current path (high-side or low-side)	Exposed metal tab - electrically connected to drain; must be soldered to large copper pour for thermal dissipation and low-inductance return path
Pin 3 (Source)	Reference node / current return	Serves as signal reference for gate drive; connects to system ground or floating rail depending on topology (e.g., high-side switch source tied to load)

Key Features

Feature	Design Value
175 °C operating temperature	Enables deployment in engine bay or enclosed industrial enclosures without derating below full current capability
100% avalanche tested	Guarantees ruggedness against inductive kickback in motor drives and solenoid control without external snubbers
R_DS(on) = 7.0 mΩ @ V_GS = -4.5 V	Supports direct interface with 5 V microcontrollers or logic drivers without gate boost circuitry
Pb-free, halogen-free, RoHS compliant	Meets IEC 61249-2-21 and J-STD-020 reflow requirements for lead-free manufacturing and environmental compliance
JEDEC-qualified for target applications	Validated per JESD22-A114 (HBM ESD ≥2 kV) and J-STD-20 moisture sensitivity level 1 (MSL1)

Applications

Automotive Body Control Module (BCM)

Industrial 24 V DC Power Distribution

Use Scenario: High-side power switch for headlight, fog lamp, or HVAC blower motor control.

IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side load switch with gate driven by low-side N-channel driver IC.

Use Value: Low R_DS(on) minimizes voltage drop and heat generation during continuous 15–30 A loads; 175 °C rating ensures reliability across under-hood temperature extremes.

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Low-side or high-side switching element controlling solenoids, valves, or indicator LEDs in 24 V industrial systems.

Use Value: Avalanche ruggedness eliminates need for freewheeling diodes across inductive loads; MSL1 packaging supports automated SMT assembly without baking.

Server PSU OR-ing Circuit

USB-C PD Power Path Switch

Use Scenario: Reverse-current blocking in redundant 12 V server power supply units.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode in OR-ing configuration with fast gate control loop.

Use Value: Low Q_rr (44 nC) and fast t_rr (46–69 ns) reduce cross-conduction losses during switchover; low R_DS(on) cuts forward voltage drop vs. Schottky diodes.

Use Scenario: Input power path switch enabling USB-C port negotiation and VBUS routing in portable electronics.

IC Role / Device Role / Timing Role: Load switch managing VBUS connection between upstream PD controller and downstream power sink.

Use Value: 4.5 V gate drive compatibility allows direct control from 5 V logic rails; halogen-free construction meets consumer electronics material compliance standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 20 mΩ @ V_GS = -10 V; higher on-resistance, lower current rating (I_D = -74 A but derates faster above 100 °C)	Less suitable for high-temperature, high-current DC-DC stages due to higher conduction loss and lower thermal robustness	Select when cost sensitivity outweighs efficiency and thermal margin requirements
STP36PF06	V_DS = -60 V; R_DS(on) = 14 mΩ @ V_GS = -10 V; wider voltage margin but higher R_DS(on) and larger TO-220 package	Better for 48 V systems but over-specified and less space-efficient for 24–30 V applications	Select only if system requires >40 V blocking voltage or through-hole mounting

Compared with IRF4905PBF and STP36PF06, IPD068P03L3GBTMA1 delivers superior thermal performance (175 °C rating + R_thJC = 1.5 K/W), lower conduction loss (6.8 mΩ), and surface-mount DPAK packaging-making it optimal for compact, high-efficiency 24–30 V power switches where thermal density and board space are constrained.

Availability

IPD068P03L3GBTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V power distribution units, and server OR-ing circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPD068P03L3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ P3 product line-designed specifically for high-efficiency, high-current switching in 12–48 V automotive and industrial power systems, emphasizing low R_DS(on), ruggedness, and thermal reliability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPD068P03L3GBTMA1 supports -280 A pulsed drain current at T_C = 25 °C, but its continuous drain current is derated to -11.0 A at T_C = 100 °C per the datasheet's I_D = f(T_C) curve. This reflects thermal limits of the DPAK package under sustained conduction, not device failure.

Is this MOSFET suitable for high-side switching with 5 V gate drive?

Yes. With R_DS(on) = 7.0 mΩ max at V_GS = -4.5 V and I_D = -45 A, it delivers usable on-resistance using standard 5 V logic-level drivers. Gate threshold voltage (V_GS(th) = -1.0 to -2.0 V) ensures strong turn-on even with marginal negative gate swing.

Does the device include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic body diode with I_S = -30 A continuous, I_S,pulse = -280 A, V_SD = -1.2 V at I_F = -70 A and T_j = 25 °C, t_rr = 46–69 ns, and Q_rr = 44 nC. These values support synchronous rectification and inductive load freewheeling without external diodes.

What is the moisture sensitivity level (MSL) and reflow profile compliance?

The IPD068P03L3GBTMA1 is rated MSL1 per J-STD-020, meaning it is not moisture-sensitive and can undergo unlimited floor life and standard lead-free reflow (peak 260 °C) without baking. Its halogen-free, RoHS-compliant construction aligns with IPC/JEDEC industry standards.

IPD068P03L3GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 91 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7720 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD068P03L3GBTMA1 FAQ

1.How can I place an order for IPD068P03L3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD068P03L3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD068P03L3GBTMA1 reliable?

The price and inventory of IPD068P03L3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD068P03L3GBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD068P03L3GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD068P03L3GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD068P03L3GBTMA1?

IPD068P03L3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD068P03L3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD068P03L3GBTMA1?

For technical support, including IPD068P03L3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD068P03L3GBTMA1 requirements.

6.How does Aetrix verify that IPD068P03L3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD068P03L3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD068P03L3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD068P03L3GBTMA1?

All IPD068P03L3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD068P03L3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD068P03L3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD068P03L3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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