Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD06N03LA G

Name: IPD06N03LA G
Brand: Infineon Technologies
SKU: IPD06N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD06N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD06N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,733

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD06N03LA from Infineon Technologies is a logic-level N-channel OptiMOS®2 power MOSFET optimized for high-frequency DC/DC converters, featuring 25 V V_DS, 5.7 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 30 A, 175 °C maximum junction temperature, and dv/dt ruggedness up to 6 kV/µs - deployed in synchronous buck converters for server VRMs and telecom POL modules.

For engineers reviewing the IPD06N03LA datasheet, IPD06N03LA pinout, IPD06N03LA application, or IPD06N03LA equivalent, key selection criteria include gate charge (Q_g = 16–22 nC), thermal resistance (R_thJC = 1.8 K/W), reverse diode forward voltage (V_SD = 0.92–1.2 V), and avalanche energy rating (E_AS = 225 mJ).

Technical Context

This device employs a trench-based silicon process enabling low R_DS(on) × Q_g figure-of-merit (FOM) critical for high-efficiency, high-switching-frequency operation. Its logic-level gate drive (V_GS(th) = 1.2–2.0 V) ensures compatibility with 3.3 V and 5 V controllers without level-shifting.

The integrated body diode exhibits fast recovery (Q_rr = 10 nC) and low V_SD, supporting synchronous rectification in buck topologies. dv/dt immunity of 6 kV/µs enables robust operation under fast transient conditions in noisy power systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines use in ≤24 V input systems like 12 V POL converters.
R_DS(on) max	5.7 mΩ @ V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 50 A, critical for high-current VRMs.
Q_g	16–22 nC - Low total gate charge reduces driver power and switching losses in >500 kHz applications.
R_thJC	1.8 K/W - Junction-to-case thermal resistance supports high-power density mounting on heatsinks or copper planes.
E_AS	225 mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive turn-off transients.
V_GS(th)	1.2–2.0 V - Logic-level threshold allows direct drive from microcontrollers or PWM ICs operating at 3.3 V.
dv/dt rating	6 kV/µs - Confirmed immunity to parasitic turn-on in hard-switched or phase-shifted topologies.

Pinout & Package

IPD06N03LA uses the P-TO252-3-11 surface-mount package (also known as D-Pak), with exposed drain pad for thermal and electrical connection to PCB copper area. The package supports high-current handling and efficient heat transfer via bottom-side thermal pad soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or output in buck configurations; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires low-inductance routing to minimize ringing and EMI.
Pin 3 (Drain)	Power input/output node	Exposed copper pad on underside - electrically and thermally connected to drain; must be soldered to ≥6 cm² copper pour.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, enabling direct interface with 3.3 V/5 V controllers without gate drivers.
Low R_DS(on) × Q_g FOM	~95 mΩ·nC - balances conduction and switching losses for optimal efficiency in 300–1000 kHz DC/DC stages.
175 °C rated junction temperature	Supports sustained operation in thermally constrained environments such as sealed telecom modules or high-density server boards.
Integrated fast-recovery body diode	V_SD = 0.92–1.2 V @ 50 A, Q_rr = 10 nC - reduces reverse recovery loss and EMI in synchronous rectification.

Applications

Server Voltage Regulator Modules (VRMs)

Telecom Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) from 12 V bus in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phases, switching at 500–800 kHz.

Use Value: 5.7 mΩ R_DS(on) minimizes conduction loss at 60+ A per phase; 1.8 K/W R_thJC enables compact thermal design without external heatsinks.

Use Scenario: Isolated or non-isolated 48 V-to-12 V or 12 V-to-3.3 V POL module in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC-derived topologies.

Use Value: dv/dt rating of 6 kV/µs prevents false triggering during fast bus transients; logic-level gate simplifies gate driver selection.

Automotive ADAS Power Management

Industrial Motor Drive Gate Drivers

Use Scenario: 12 V input DC/DC for radar sensor or camera ECU requiring ASIL-B compatible power stage.

IC Role / Device Role / Timing Role: High-efficiency step-down regulator feeding FPGA or SoC in safety-critical vision processing units.

Use Value: 175 °C T_j,max and 225 mJ E_AS support reliable operation under automotive under-hood thermal stress and load dump events.

Use Scenario: Half-bridge high-side/low-side pair in 24 V BLDC motor gate driver IC auxiliary supply.

IC Role / Device Role / Timing Role: Integrated bootstrap supply switch or isolated bias rail generator for gate driver ICs.

Use Value: Low Q_g (16–22 nC) and fast switching (t_r/t_f = 17/7 ns) enable clean, low-loss gate drive waveform generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 6.2 mΩ @ 4.5 V; Q_g = 13.5 nC; V_DS = 30 V; TO-252 package.	Higher V_DS margin but higher R_DS(on) at 4.5 V; better for 24 V systems with lower gate drive voltage.	Select when 30 V rating and tighter gate charge control outweigh marginal R_DS(on) penalty.
STL11DN3LLH6	R_DS(on) = 5.5 mΩ @ 4.5 V; Q_g = 19 nC; V_DS = 30 V; PowerFLAT 5x6 package.	Smaller footprint, same logic-level drive; lacks published dv/dt rating and E_AS spec.	Prefer for space-constrained designs where thermal performance via PCB copper is prioritized over discrete heatsinking.

Compared with IRLHS6342TRPBF and STL11DN3LLH6, IPD06N03LA offers superior dv/dt ruggedness and verified avalanche capability - critical for reliability in unclamped inductive switching, while maintaining best-in-class R_DS(on) × Q_g at 10 V drive.

Availability

IPD06N03LA is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and automotive ADAS power management requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPD06N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFETs and wide-bandgap devices.

IPD06N03LA belongs to the OptiMOS®2 power transistor product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for IPD06N03LA at 100 °C case temperature?

The maximum continuous drain current is 50 A at T_C = 100 °C, limited by bondwire capacity rather than thermal saturation. This rating assumes proper PCB copper area (≥6 cm²) and still-air convection cooling per datasheet condition.

Does IPD06N03LA support 3.3 V gate drive in practical applications?

Yes - with V_GS(th) of 1.2–2.0 V and R_DS(on) = 7.5–8.4 mΩ at V_GS = 4.5 V, it achieves usable enhancement at 3.3 V drive. However, full 5.7 mΩ performance requires ≥4.5 V; derating is recommended for 3.3 V operation.

How is thermal performance affected when mounted on minimal PCB copper?

With minimal footprint (no added copper), R_thJA degrades to 75 K/W, limiting power dissipation to ~11 W at T_J = 125 °C. For 50 A operation, ≥6 cm² drain copper area is mandatory to achieve the specified 1.8 K/W R_thJC and sustain full current.

Is the body diode suitable for synchronous rectification without external Schottky?

Yes - the integrated body diode has V_SD = 0.92–1.2 V and Q_rr = 10 nC, making it viable for synchronous rectification in buck converters up to ~1 MHz. Its performance is validated in Infineon reference designs for VRMs and POLs.

IPD06N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2653 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD06N03LA G FAQ

1.How can I place an order for IPD06N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD06N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD06N03LA G reliable?

The price and inventory of IPD06N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD06N03LA G is usually 5 days.

3.What payment methods are accepted for IPD06N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD06N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD06N03LA G?

IPD06N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD06N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD06N03LA G?

For technical support, including IPD06N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD06N03LA G requirements.

6.How does Aetrix verify that IPD06N03LA G is sourced from the original manufacturer or authorized distributors?

All IPD06N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD06N03LA G meets industry standards.

7.What is the process for return or replacement of IPD06N03LA G?

All IPD06N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPD06N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD06N03LA G part is unused and in its original packaging.

Return procedure for IPD06N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…