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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD06N03LB G

Name: IPD06N03LB G
Brand: Infineon Technologies
SKU: IPD06N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD06N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD06N03LB G.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

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Product details

Overview

IPD06N03LB G from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TO252-3 package, rated for 30 V V_DS, 50 A continuous drain current at T_C = 25 °C, 6.1 mΩ R_DS(on) max at V_GS = 10 V, and 175 °C maximum junction temperature-designed for high-frequency DC/DC converters requiring low conduction loss and robust dv/dt immunity.

For engineers reviewing the IPD06N03LB G datasheet, IPD06N03LB G pinout, IPD06N03LB G application, or IPD06N03LB G equivalent, key selection criteria include its 1.8 K/W R_thJC, 160 mJ single-pulse avalanche energy, 6 kV/µs dv/dt rating, and optimized gate charge (Q_g = 16–22 nC) for synchronous FET operation in compact power stages.

Technical Context

This OptiMOS®2 device employs a trench-gate silicon process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency switching in 48 V input and 12 V output DC/DC topologies. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) ensures full enhancement with standard 3.3 V or 5 V controllers.

The integrated body diode exhibits low V_SD (0.92–1.2 V at 50 A, 25 °C) and minimal Q_rr (≤10 nC), supporting ZVS and reduced reverse recovery losses in synchronous buck and OR-ing applications. Thermal design is enabled by validated R_thJC = 1.8 K/W and R_thJA = 50 K/W on 6 cm² PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V nominal bus systems with margin for transients
R_DS(on) max	6.1 mΩ at V_GS = 10 V - enables ≤3.05 W conduction loss at 50 A
I_D cont.	50 A at T_C = 25 °C - sustained current capability with minimal heatsinking
Q_g	16–22 nC - balances switching speed and gate drive power in 500 kHz–1 MHz designs
dv/dt rating	6 kV/µs - prevents spurious turn-on in hard-switched high-di/dt environments
E_AS	160 mJ - withstands single-pulse inductive energy without failure
T_j max	175 °C - allows operation in sealed enclosures or high-ambient industrial settings

Pinout & Package

IPD06N03LB G uses the PG-TO252-3 (D-Pak) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Logic-level compatible; requires <20 V absolute max rating; drives with low Q_g
Pin 2 (Drain)	Power output node	Exposed copper tab; electrically connected to drain; primary thermal path to PCB
Pin 3 (Source)	Reference return	Common node for gate drive reference and current sensing; low-inductance layout critical

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_g)	Enables >95% efficiency in 1 MHz synchronous buck converters at 25 A load
175 °C rated junction	Supports derating-free operation up to 125 °C ambient in forced-air or sealed systems
dv/dt immune structure	Eliminates need for external gate resistors or snubbers in high-di/dt motor drive inverters
Low Q_rr body diode	Reduces switching loss and EMI in hard-commutated synchronous rectification
Pb-free & RoHS compliant	Meets IPC-J-STD-020 reflow profile for lead-free assembly without reliability compromise

Applications

Server VRM

Industrial DC/DC Converter

Use Scenario: High-density 48 V-to-12 V point-of-load regulator delivering up to 120 A per phase.

IC Role / Device Role / Timing Role: Synchronous high-side switch with fast turn-on and low R_DS(on) to minimize conduction loss.

Use Value: Achieves 96.2% peak efficiency at 50 A due to 6.1 mΩ R_DS(on) and 22 nC Q_g.

Use Scenario: Isolated 24 V input, 5 V output flyback converter with active clamp.

IC Role / Device Role / Timing Role: Clamp switch handling repetitive 30 V, 20 A pulses at 200 kHz.

Use Value: Survives 160 mJ avalanche events and maintains stable R_DS(on) over 10⁵ cycles.

Automotive Body Control Module

Telecom Power Supply

Use Scenario: Load switch for 12 V battery-fed lighting and actuator circuits.

IC Role / Device Role / Timing Role: Logic-level controlled high-side switch with integrated protection.

Use Value: Operates reliably at -40 °C to +125 °C ambient with no gate driver boost required.

Use Scenario: 48 V intermediate bus converter feeding distributed 3.3 V/5 V rails.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in LLC resonant topology.

Use Value: Low Q_rr (≤10 nC) and 6 kV/µs dv/dt rating reduce dead-time loss and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 6.0 mΩ @ 10 V but higher Q_g = 32 nC; no dv/dt rating specified	Lacks documented 6 kV/µs immunity; less suitable for high-di/dt motor control	Prefer IPD06N03LB G where dv/dt robustness or lower gate drive loss is critical
STL110N3LLH6	R_DS(on) = 5.5 mΩ @ 10 V but only rated to 150 °C T_j; Q_g = 24 nC	Not qualified for 175 °C operation; unsuitable for sealed industrial enclosures	Choose IPD06N03LB G when extended temperature range or JEDEC qualification is mandatory

Compared with IRL3803PbF and STL110N3LLH6, IPD06N03LB G uniquely combines 175 °C rating, 6 kV/µs dv/dt immunity, and sub-22 nC Q_g, making it optimal for thermally constrained, high-reliability DC/DC and motor drive applications where both conduction and switching losses must be minimized.

Availability

IPD06N03LB G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, automotive body control modules, and telecom power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPD06N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line delivers high-performance, logic-level N-channel MOSFETs optimized for high-frequency switching in space-constrained power conversion systems.

FAQ

Is IPD06N03LB G suitable for synchronous rectification in LLC resonant converters?

Yes. Its low Q_rr (≤10 nC), 6 kV/µs dv/dt rating, and 175 °C junction temperature enable reliable operation as a synchronous rectifier in LLC topologies operating up to 1 MHz. The body diode's V_SD of 0.92–1.2 V at 50 A minimizes forward conduction loss during dead time.

What is the minimum gate voltage required to fully enhance IPD06N03LB G?

The gate threshold voltage V_GS(th) ranges from 1.2 V to 2.0 V at T_j = 25 °C. Full enhancement (R_DS(on) ≤ 6.1 mΩ) is achieved at V_GS ≥ 10 V. At V_GS = 4.5 V, R_DS(on) is 7.2–9.1 mΩ-sufficient for many logic-level controller interfaces.

Can IPD06N03LB G replace older OptiMOS®1 devices in existing designs?

Yes, with verified layout review. IPD06N03LB G shares identical PG-TO252-3 footprint and pinout with OptiMOS®1 predecessors like IPD05N03LA, offering improved R_DS(on) and lower Q_g. Thermal and switching behavior changes require validation of gate drive strength and PCB copper area.

Does IPD06N03LB G require a gate resistor for stability?

A gate resistor is recommended for EMI control and ringing suppression, especially in high-di/dt applications. While the device is dv/dt rated to 6 kV/µs, typical designs use 2.2–10 Ω series gate resistance to balance switching speed, overshoot, and gate driver stress-no external snubber is needed due to intrinsic immunity.

IPD06N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD06N03LB G FAQ

1.How can I place an order for IPD06N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD06N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD06N03LB G reliable?

The price and inventory of IPD06N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD06N03LB G is usually 5 days.

3.What payment methods are accepted for IPD06N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD06N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD06N03LB G?

IPD06N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD06N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD06N03LB G?

For technical support, including IPD06N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD06N03LB G requirements.

6.How does Aetrix verify that IPD06N03LB G is sourced from the original manufacturer or authorized distributors?

All IPD06N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD06N03LB G meets industry standards.

7.What is the process for return or replacement of IPD06N03LB G?

All IPD06N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPD06N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD06N03LB G part is unused and in its original packaging.

Return procedure for IPD06N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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