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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD082N10N3GBTMA1

Name: IPD082N10N3GBTMA1
Brand: Infineon Technologies
SKU: IPD082N10N3GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD082N10N3GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD082N10N3GBTMA1.pdf

Description:: MOSFET N-CH 100V 80A TO252-3

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Product details

Overview

IPD082N10N3GBTMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO252-3 (DPAK) package, rated for 100 V V_DS, 8.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 73 A, with 175 °C maximum junction temperature. It delivers low gate charge × R_DS(on) figure-of-merit and supports high-frequency switching in DC-DC converters and synchronous rectifiers.

For engineers reviewing the IPD082N10N3GBTMA1 datasheet, IPD082N10N3GBTMA1 pinout, IPD082N10N3GBTMA1 application, or IPD082N10N3GBTMA1 equivalent, key selection criteria include its 8.2 mΩ on-resistance at 10 V gate drive, 320 A pulsed drain current capability, integrated body diode with 71 ns reverse recovery time, and JEDEC-qualified reliability for industrial power stages.

Technical Context

This OptiMOS™3 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching performance: C_iss = 3980 pF, Q_g = 55 nC, and t_r = 42 ns at V_DD = 50 V. Its gate threshold voltage (2.0–3.5 V) enables robust 5 V and 10 V logic-level drive compatibility.

The MOSFET features a monolithic source-connected body diode with 1.2 V forward voltage at 80 A and 123 nC reverse recovery charge, optimized for synchronous rectification in buck converters and OR-ing circuits where reverse recovery loss minimization is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	100 V - supports 48 V input bus designs with 2× safety margin against transients
R_DS(on) max	8.2 mΩ @ V_GS = 10 V, I_D = 73 A - enables <1 W conduction loss at 80 A continuous operation
I_D Continuous	80 A @ T_C = 25 °C - requires ≥6 cm² copper area on FR4 PCB for thermal compliance
E_AS	110 mJ - withstands single-pulse avalanche stress up to 73 A without failure
Q_g	42–55 nC - determines gate driver power requirement and switching loss trade-off
t_rr	71 ns - reduces cross-conduction loss in synchronous rectifier topologies
T_j max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IPD082N10N3GBTMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain pad for thermal dissipation. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤20 V gate-source voltage per absolute maximum rating
Pin 2 (D)	Drain terminal / thermal pad	High-current output node; electrically and thermally connected to exposed copper tab
Pin 3 (S)	Source terminal	Reference node for gate drive; tied to power ground in low-side switch configurations

Key Features

Feature	Design Value
N-channel normal-level gate	Operates fully enhanced with standard 10 V gate drive; compatible with microcontroller GPIO and dedicated gate drivers
Low R_DS(on) × Q_g FOM	~460 Ω·nC - balances conduction and switching losses for >500 kHz SMPS designs
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 for industrial temperature cycling and humidity exposure
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for green manufacturing

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-efficiency 12 V → 1 V/100 A point-of-load conversion in rack-mounted servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck converter.

Use Value: 8.2 mΩ R_DS(on) and 71 ns t_rr reduce conduction and recovery losses, enabling >94% efficiency at full load.

Use Scenario: 48 V input isolated DC-DC module for PLC and motor control systems.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in active-clamp forward or LLC resonant topology.

Use Value: 110 mJ E_AS and 175 °C T_j rating ensure ruggedness during overcurrent fault conditions in unattended industrial operation.

Solar Microinverter Half-Bridge

EV Onboard Charger PFC Stage

Use Scenario: AC-coupled string-level microinverter with bidirectional energy flow.

IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter leg operating at 20–100 kHz.

Use Value: Low C_oss (696 pF) and fast t_f (8 ns) minimize switching loss and EMI generation during hard-commutation.

Use Scenario: Boost PFC stage in 6.6 kW bidirectional OBC for Level 2 EV charging.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 16 A RMS line current at 65 kHz.

Use Value: 55 nC Q_g enables efficient gate driving with low-power IC drivers, reducing auxiliary supply burden.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB083N10N3G	R_DS(on) = 8.3 mΩ (TO-263), higher thermal resistance (R_thJC = 1.2 K/W vs. 1.0 K/W for TO-252)	Better suited for surface-mount layouts requiring larger pad area; less compact than DPAK	Select when board space permits larger footprint and higher solder joint reliability is prioritized
IPP086N10N3G	R_DS(on) = 8.6 mΩ (TO-220), higher R_thJC = 1.2 K/W, through-hole mounting	Preferred for prototyping or low-volume assemblies where manual soldering and heatsink clamping are used	Choose for lab validation or legacy through-hole production lines lacking SMT capability

Compared with IPB083N10N3G and IPP086N10N3G, IPD082N10N3GBTMA1 offers the lowest profile and best thermal resistance in DPAK, making it optimal for space-constrained, high-power-density industrial and computing power supplies.

Availability

IPD082N10N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, solar microinverters, and EV onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for IPD082N10N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in computing, industrial, and renewable energy systems where low R_DS(on) and fast switching are essential.

FAQ

Is IPD082N10N3GBTMA1 suitable for 5 V gate drive?

No - this is a normal-level MOSFET with V_GS(th) min = 2.0 V and typical R_DS(on) specified at V_GS = 10 V. At 5 V, R_DS(on) rises significantly (≥15 mΩ), increasing conduction loss. Use logic-level alternatives like BSC010N04LS for true 5 V drive.

What is the recommended PCB layout for thermal performance?

A minimum 6 cm² copper area (single-layer, 70 µm thick) connected to the drain tab is required per datasheet Figure 3. The pad must be thermally vias-stitched to inner/ground planes, and the assembly must be mounted vertically in still air to achieve R_thJA = 50 K/W.

Does IPD082N10N3GBTMA1 have avalanche rating?

Yes - it is fully rated for repetitive and single-pulse avalanche with E_AS = 110 mJ at I_D = 73 A and R_GS = 25 Ω. This enables robust operation in inductive switching applications without external snubbers under defined pulse conditions.

Can it replace IPB083N10N3G in existing TO-263 designs?

Not directly - although both share identical electrical specs, IPD082N10N3GBTMA1 uses PG-TO252-3 (DPAK) while IPB083N10N3G uses PG-TO263-3 (D2PAK). Footprint, thermal pad geometry, and solder reflow profiles differ; redesign of land pattern and stencil is required.

IPD082N10N3GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.2mOhm @ 73A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 75µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3980 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD082N10N3GBTMA1 FAQ

1.How can I place an order for IPD082N10N3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD082N10N3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD082N10N3GBTMA1 reliable?

The price and inventory of IPD082N10N3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD082N10N3GBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD082N10N3GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD082N10N3GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD082N10N3GBTMA1?

IPD082N10N3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD082N10N3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD082N10N3GBTMA1?

For technical support, including IPD082N10N3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD082N10N3GBTMA1 requirements.

6.How does Aetrix verify that IPD082N10N3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD082N10N3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD082N10N3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD082N10N3GBTMA1?

All IPD082N10N3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD082N10N3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD082N10N3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD082N10N3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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