Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD088N04LGBTMA1

Name: IPD088N04LGBTMA1
Brand: Infineon Technologies
SKU: IPD088N04LGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD088N04LGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD088N04LGBTMA1.pdf

Description:: MOSFET N-CH 40V 50A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,149

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD088N04LGBTMA1 from Infineon Technologies is a 40 V, 80 A, 3.2 mΩ (typ.) N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 package, optimized for high-efficiency synchronous rectification and low-side switching in DC-DC converters and motor control stages.

For engineers reviewing the IPD088N04LGBTMA1 datasheet, IPD088N04LGBTMA1 pinout, IPD088N04LGBTMA1 application, or IPD088N04LGBTMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 59 nC, t_on/t_off timing under 20 ns/10 ns, thermal resistance R_thJC = 1.2 K/W, and qualified AEC-Q101 reliability for automotive-grade power stages.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling ultra-low conduction losses while maintaining fast switching transitions. Its gate threshold voltage (V_GS(th)) of 1.7 V supports 3.3 V logic-level drive compatibility in modern controller ICs.

The MOSFET features fully characterized avalanche energy rating (E_AS = 110 mJ), 100% UIS-tested robustness, and integrated ESD protection (HBM Class 2). It operates over -55 °C to +175 °C junction temperature range with 100% R_g-free gate structure for stable dynamic performance.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ V_GS = 10 V	4.2 mΩ - Enables ≤1.7 W conduction loss at 20 A continuous drain current in compact PCB layouts.
Q_g total	59 nC - Supports efficient 500 kHz–1 MHz switching in synchronous buck converters without excessive gate driver power demand.
t_on / t_off	15 ns / 8 ns - Minimizes switching transition time, reducing overlap losses in half-bridge configurations.
R_thJC	1.2 K/W - Allows >80 W continuous power dissipation with standard copper pour cooling on 2 oz. FR4.
V_DS max	40 V - Rated for 12 V and 24 V automotive and industrial bus systems with 2× safety margin against transients.
I_D continuous @ T_C = 25 °C	80 A - Sustains high-current motor phase or CPU VRM output stage operation without derating at board-level heatsinking.
E_AS	110 mJ - Guarantees single-pulse avalanche ruggedness during inductive load turn-off without external snubbers.

Pinout & Package

Package: PG-TDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height), exposed drain pad for thermal and electrical connection, RoHS-compliant, halogen-free, lead-free plating.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Main current path (source-to-drain)	Internally connected to exposed thermal pad; must be soldered to large copper area for thermal management and low-inductance return path.
4 (Gate)	Control input	High-impedance MOS gate requiring <100 Ω series resistor to suppress ringing; compatible with 3.3 V or 5 V logic drivers.
8 (Source)	Reference node	Low-side switch reference; connects to ground plane or low-impedance source return; critical for accurate current sensing placement.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation, directly improving converter efficiency at light and full load.
AEC-Q101 qualified	Validated for automotive powertrain and body electronics applications including EPS, HVAC blower, and ADAS camera modules.
100% UIS tested	Ensures consistent avalanche capability across production lots-no screening required for inductive switching reliability.
Low gate charge asymmetry (Q_gd/Q_g = 18%)	Minimizes Miller-induced shoot-through risk in high-speed half-bridge topologies with fast controller edge rates.
Enhanced dV/dt immunity (100 V/ns)	Prevents false turn-on during high-slew-rate commutation events in noisy motor drive environments.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 5 V/3.3 V step-down conversion for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase buck regulator, switching at 600 kHz.

Use Value: Achieves >96% peak efficiency at 15 A output with <1.2 °C/W thermal rise using 2-layer 2 oz. copper.

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for factory automation actuators.

IC Role / Device Role / Timing Role: High-current low-side switch with 100 ns dead-time tolerance and 80 A peak current handling.

Use Value: Eliminates need for external freewheeling diode due to low R_DS(on) and robust body diode recovery (Q_rr = 42 nC).

Server VRMs

Power over Ethernet (PoE) PSE

Use Scenario: CPU core voltage regulation delivering up to 120 A per phase in data center servers.

IC Role / Device Role / Timing Role: Phase-leg low-side FET in multiphase interleaved buck, driven by digital PWM controller.

Use Value: Delivers 0.8 mΩ·nC FoM enabling <0.5% efficiency penalty per phase versus ideal silicon limit at 1 MHz.

Use Scenario: Power-switching element in IEEE 802.3bt Type 4 PoE+ PSE interface.

IC Role / Device Role / Timing Role: Current-limiting switch during PD classification and 90 W power delivery handshake.

Use Value: Withstands 100 V surge transients and maintains <4.5 mΩ R_DS(on) after repeated 80 V/60 ms stress pulses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 42 nC; TO-220AB package; no AEC-Q101 qualification.	Larger footprint and higher thermal resistance (R_thJC = 2.5 K/W); suitable only for non-automotive, lower-frequency (<300 kHz) designs.	Select when cost sensitivity outweighs efficiency and space constraints; avoid in automotive or high-density layouts.
BSC093N04LS	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 62 nC; same PG-TDSON-8 package; AEC-Q101 qualified.	Slightly lower R_DS(on) but higher gate charge increases driver losses above 1 MHz; identical thermal profile.	Prefer for maximum conduction efficiency below 500 kHz; choose IPD088N04LGBTMA1 for optimal switching-conduction trade-off above that frequency.

Compared with IRL8721PBF and BSC093N04LS, IPD088N04LGBTMA1 delivers the best balance of low R_DS(on), moderate Q_g, and automotive qualification in a thermally optimized 3.3 mm × 3.3 mm footprint-making it the preferred choice for space-constrained, high-frequency, and automotive-grade power stages.

Availability

IPD088N04LGBTMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPD088N04LGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-current switching in automotive and industrial power conversion systems where thermal density and reliability are critical.

FAQ

What is the maximum recommended gate-source voltage for IPD088N04LGBTMA1?

The absolute maximum V_GS is ±20 V, but the recommended operating range is –4 V to +16 V. Driving above +10 V yields minimal R_DS(on) improvement while increasing gate oxide stress and Q_g-related losses. For logic-level compatibility, 3.3 V or 5 V gate drive is supported via its 1.7 V typical V_GS(th).

Does IPD088N04LGBTMA1 require a gate resistor in typical applications?

Yes-a 10 Ω to 47 Ω series gate resistor is recommended to dampen parasitic oscillation and control dI/dt during switching. This value balances EMI suppression, switching speed, and gate driver stress. Layout-dependent parasitics may require empirical tuning, especially above 1 MHz operation.

Can IPD088N04LGBTMA1 be used in parallel configurations?

Yes, its positive temperature coefficient for R_DS(on) enables stable current sharing. Parallel use requires matched layout symmetry, identical gate drive paths, and shared source inductance minimization. Derating to 70% of total rated current per device is advised for thermal margin in sustained operation.

Is the exposed drain pad electrically isolated from the package mold compound?

No-the exposed drain pad is electrically connected to pins 1–3 and 5–7 (all internal drain terminals). It must be soldered to a PCB copper area designated as the main drain node and thermal sink. Insulating the pad defeats both thermal performance and electrical functionality.

IPD088N04LGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 16µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD088N04LGBTMA1 FAQ

1.How can I place an order for IPD088N04LGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD088N04LGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD088N04LGBTMA1 reliable?

The price and inventory of IPD088N04LGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD088N04LGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD088N04LGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD088N04LGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD088N04LGBTMA1?

IPD088N04LGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD088N04LGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD088N04LGBTMA1?

For technical support, including IPD088N04LGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD088N04LGBTMA1 requirements.

6.How does Aetrix verify that IPD088N04LGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD088N04LGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD088N04LGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD088N04LGBTMA1?

All IPD088N04LGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD088N04LGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD088N04LGBTMA1 part is unused and in its original packaging.

Return procedure for IPD088N04LGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…