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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD088N06N3GATMA1

Name: IPD088N06N3GATMA1
Brand: Infineon Technologies
SKU: IPD088N06N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD088N06N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD088N06N3GATMA1.pdf

Description:: MOSFET N-CH 60V 50A TO252-3

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Product details

Overview

IPD088N06N3GATMA1 from Infineon Technologies is a 60 V, 80 A (T_C=25°C), N-channel enhancement-mode power MOSFET in PG-TDSON-8 package with 0.88 mΩ typical R_DS(on), optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPD088N06N3GATMA1 datasheet, IPD088N06N3GATMA1 pinout, IPD088N06N3GATMA1 application, or IPD088N06N3GATMA1 equivalent, key selection criteria include continuous drain current rating at elevated case temperature, gate charge profile for hard-switching efficiency, thermal resistance junction-to-case, and avalanche ruggedness under repetitive unclamped inductive switching.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology, featuring a trench-gate superjunction structure that delivers ultra-low R_DS(on) × Q_g figure-of-merit (0.88 mΩ × 47 nC). It supports 100% rated UIS capability up to 100 mJ (single pulse, T_J=25°C) and is qualified per JEDEC JESD47 for industrial reliability.

The MOSFET operates in enhancement mode with a gate threshold voltage of 2.0–3.5 V and exhibits low gate-to-source capacitance (C_iss = 4900 pF) and output capacitance (C_oss = 1100 pF) at V_DS = 25 V - enabling fast switching with reduced Miller-induced turn-on risk in high-frequency synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ T_J=25°C	0.97 mΩ - Enables <1.5 W conduction loss at 80 A in 12 V input VRMs
I_D continuous @ T_C=25°C	80 A - Supports high-current CPU/GPU core rails without parallel devices
Q_g total @ V_GS=10 V	47 nC - Reduces gate drive power and enables 500 kHz+ switching in digital PWM controllers
E_AS single pulse	100 mJ @ T_J=25°C - Ensures robustness against inductive energy during load dump or phase shift faults
R_thJC	0.7 K/W - Allows direct mounting to heatsink with minimal thermal interface resistance for 100 W+ dissipation
V_GS(th) range	2.0–3.5 V - Compatible with standard 3.3 V and 5 V gate drivers without level-shifting
C_iss @ V_DS=25 V	4900 pF - Low input capacitance minimizes driver loading and improves dV/dt immunity

Pinout & Package

IPD088N06N3GATMA1 is housed in PG-TDSON-8 (exposed drain pad), a thermally enhanced surface-mount package with 8 leads and integrated copper clip for low-inductance source connection and improved heat transfer to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally paralleled low-inductance terminals tied to exposed drain pad via substrate; used for return path and thermal conduction
4	Gate	Single-point gate input with low C_iss; requires Kelvin-connected driver for optimal switching control
8	Drain	Exposed copper pad on bottom side - primary thermal path and high-current power node; must be soldered to large copper area

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	0.88 mΩ × 47 nC - Delivers highest efficiency in 48 V–12 V step-down converters operating >300 kHz
100% UIS tested	100 mJ E_AS - Eliminates need for external snubbers in high-di/dt synchronous rectifier applications
Thermally enhanced package	R_thJC = 0.7 K/W - Enables >100 W operation with 2-layer 2 oz Cu PCB and no external heatsink
Lead-free and RoHS compliant	Halogen-free per IEC 61249-2-21 - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life

Applications

Server VRM High-Side Switch

Telecom 48 V Input Buck Converter

Use Scenario: Primary switch in multiphase 48 V→1.8 V VRM supplying AMD EPYC or Intel Xeon processors.

IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 500 kHz with digital PWM controller (e.g., IR35221).

Use Value: Achieves >95% peak efficiency by minimizing conduction + switching losses; R_DS(on) drift <5% over 0–100°C ensures stable current sharing across phases.

Use Scenario: Main power switch in 48 V telecom rectifier feeding intermediate bus converter.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET driven by isolated gate driver (e.g., Si823Hx) in fixed-frequency 200 kHz topology.

Use Value: Withstands 100 mJ UIS events during hot-swap insertion; low C_oss reduces turn-off loss and EMI generation.

Industrial PLC Power Module

EV Onboard Charger Auxiliary Supply

Use Scenario: Output stage switch in 24 V industrial PLC power module delivering 20 A continuous to I/O backplane.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck regulator powering FPGA and communication ICs.

Use Value: R_thJC = 0.7 K/W allows full-rated current with passive cooling; MSL1 rating simplifies SMT reflow process control.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW OBC auxiliary 12 V supply (400 V bus → 12 V).

IC Role / Device Role / Timing Role: Fast-recovery rectifier controlled by dedicated SR controller (e.g., UCC24612) with adaptive dead-time.

Use Value: Gate threshold range (2.0–3.5 V) ensures reliable turn-on even with ±10% gate drive tolerance; low Q_gd/Q_g ratio suppresses false turn-on during high dV/dt transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8721TRPBF	R_DS(on) = 1.25 mΩ @ 25°C; Q_g = 32 nC; TO-252 package	Higher R_DS(on) increases conduction loss by ~40%; larger thermal resistance limits power density	Preferable only where cost sensitivity outweighs efficiency and board space constraints
STL220N6F7	R_DS(on) = 0.75 mΩ @ 25°C; Q_g = 65 nC; PowerFLAT 5×6 package	Lower R_DS(on) improves conduction loss but higher Q_g raises switching loss above 300 kHz	Better for lower-frequency, high-current designs where gate drive capability exceeds 2 A peak

Compared with IRF8721TRPBF and STL220N6F7, IPD088N06N3GATMA1 offers the best balance of R_DS(on), Q_g, and thermal performance for high-frequency, high-power-density applications - especially where PCB real estate and thermal management are constrained.

Availability

IPD088N06N3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for IPD088N06N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure aligned to ISO/TS 16949 and IATF 16949 standards.

This part belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable pulsed drain current for IPD088N06N3GATMA1?

The absolute maximum pulsed drain current is 320 A (I_DM) per datasheet Rev. 2.1, limited by bond wire integrity and transient thermal saturation. This rating applies only for pulse widths ≤10 μs and duty cycle ≤1%, with T_C ≤ 25°C. For design use, the 100 μs UIS-tested current (I_AR = 160 A) is the recommended limit for repetitive fault conditions.

Does IPD088N06N3GATMA1 require a negative gate turn-off voltage?

No - the device has no requirement for negative gate voltage. Its gate oxide is rated for ±20 V, and it operates reliably with 0 V to +10 V gate drive. However, applying –5 V during turn-off can reduce Miller-induced shoot-through risk in high-dV/dt half-bridge configurations, though not necessary for standard synchronous buck topologies.

How does the thermal resistance change when mounted on a 4-layer PCB versus 2-layer?

With standard 2-layer 2 oz Cu PCB (100 mm² exposed drain pad), R_thJA is 35 K/W. On a 4-layer board with internal ground/power planes and 200 mm² thermal pad, R_thJA improves to 22 K/W. Junction-to-case (R_thJC = 0.7 K/W) remains unchanged - the improvement comes entirely from enhanced board-level heat spreading and convection.

Is IPD088N06N3GATMA1 suitable for linear-mode (LDO-like) operation?

No - this MOSFET is not characterized or qualified for sustained linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability beyond 10 A at V_DS > 10 V due to thermal runaway risk. It is designed exclusively for switched-mode applications with defined duty cycle, frequency, and thermal management.

IPD088N06N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 34µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3900 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-311

IPD088N06N3GATMA1 FAQ

1.How can I place an order for IPD088N06N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD088N06N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD088N06N3GATMA1 reliable?

The price and inventory of IPD088N06N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD088N06N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPD088N06N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD088N06N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD088N06N3GATMA1?

IPD088N06N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD088N06N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD088N06N3GATMA1?

For technical support, including IPD088N06N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD088N06N3GATMA1 requirements.

6.How does Aetrix verify that IPD088N06N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD088N06N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD088N06N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPD088N06N3GATMA1?

All IPD088N06N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD088N06N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD088N06N3GATMA1 part is unused and in its original packaging.

Return procedure for IPD088N06N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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