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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD090N03LGBTMA1

Name: IPD090N03LGBTMA1
Brand: Infineon Technologies
SKU: IPD090N03LGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD090N03LGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD090N03LGBTMA1.pdf

Description:: MOSFET N-CH 30V 40A TO252-3

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Product details

Overview

IPD090N03LGBTMA1 from Infineon Technologies is a 30 V, 90 A, logic-level N-channel TrenchMOS power transistor in PG-TDSON-8 package with R_DS(on) = 1.7 mΩ (max) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IPD090N03LGBTMA1 datasheet, IPD090N03LGBTMA1 pinout, IPD090N03LGBTMA1 application, or IPD090N03LGBTMA1 equivalent, key selection criteria include low gate charge (Q_G = 45 nC), fast switching (t_on = 12 ns, t_off = 22 ns), and thermally enhanced SO-8 package with exposed drain pad for PCB-level heat dissipation.

Technical Context

This device implements Infineon's TrenchMOS technology with optimized cell layout for reduced conduction and switching losses. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The integrated body diode exhibits low reverse recovery charge (Q_rr = 120 nC) and soft recovery behavior, minimizing voltage overshoot in synchronous buck topologies. Thermal resistance R_thJC = 0.9 K/W supports continuous operation at up to 100 A with adequate PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 24 V system-level designs with margin against transients.
R_DS(on) max @ V_GS = 10 V	1.7 mΩ - Enables <1 W conduction loss at 75 A, critical for high-current POL converters.
I_D continuous @ T_C = 25°C	90 A - Sustained current capability with thermal derating above 25°C case temperature.
Q_G	45 nC - Low total gate charge reduces driver power and enables >1 MHz switching in resonant topologies.
t_on/t_off	12 ns / 22 ns - Fast turn-on/turn-off minimizes overlap loss in hard-switched half-bridges.
Q_rr	120 nC - Low reverse recovery charge limits EMI and stress on complementary switch in synchronous rectification.
R_thJC	0.9 K/W - Confirmed junction-to-case thermal resistance enabling direct heatsink mounting via exposed drain pad.

Pinout & Package

IPD090N03LGBTMA1 uses the PG-TDSON-8 (SO-8 variant with exposed drain pad) package: 5 mm × 6 mm footprint, 1.27 mm pitch, 0.55 mm height, with drain connected to the bottom-side thermal pad for PCB copper thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally tied to exposed thermal pad; primary current path and thermal interface to PCB.
6	Gate (G)	Control terminal requiring ≤2.2 V threshold; low input capacitance (C_iss = 3700 pF) eases driver design.
Source (S)	Source (S)	Terminal 6 is gate only; source is connected externally via pins 1–5, 7–8 - all drain pins are electrically common; source connection is made through PCB trace to driver ground reference.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) range 1.2–2.2 V enables direct interfacing with 3.3 V MCU GPIOs without external level shifters.
Low R_DS(on) × Q_G figure of merit	76.5 mΩ·nC - Balances conduction and switching loss for optimal efficiency in 300–1000 kHz SMPS designs.
Enhanced avalanche ruggedness	Rated for repetitive unclamped inductive switching (UIS) up to 100 mJ - supports robust motor phase-leg operation.
Thermally optimized SO-8 package	Exposed drain pad with 40 mm² minimum copper area achieves R_thJA ≈ 45 K/W on 2-layer board - no heatsink required below 40 W dissipation.

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: Half-bridge phase-leg in 24 V BLDC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: High-side and low-side power switch with synchronized PWM gating at 20–50 kHz.

Use Value: 1.7 mΩ R_DS(on) reduces I²R loss by 35% vs. comparable 2.5 mΩ MOSFETs, extending thermal headroom at 60 A peak.

Use Scenario: High-current synchronous buck converter delivering 12 V → 1.2 V @ 120 A for CPU core power in enterprise servers.

IC Role / Device Role / Timing Role: Low-side switch operating at 600 kHz with adaptive dead-time control.

Use Value: Q_rr = 120 nC cuts body-diode reverse recovery loss by 50% versus standard SO-8 MOSFETs, improving full-load efficiency by 0.8%.

Telecom DC-DC Modules

EV Onboard Chargers (OBC)

Use Scenario: Primary-side switch in isolated 48 V → 12 V flyback converters for telecom base station power management.

IC Role / Device Role / Timing Role: Single-ended switch with 30 V rating accommodating 48 V nominal + 30% transient margin.

Use Value: V_GS(th) ≤ 2.2 V ensures reliable turn-on under cold-start conditions where supply rails dip to 3.0 V.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW OBC LLC resonant converter output stage.

IC Role / Device Role / Timing Role: 30 V-rated rectifier replacing Schottky diodes to reduce forward drop and conduction loss.

Use Value: R_DS(on) = 1.7 mΩ yields 0.05 V effective forward voltage at 80 A, cutting rectifier loss by 65% vs. 0.45 V Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 2.1 mΩ @ 10 V; Q_G = 36 nC; SO-8 package with non-exposed drain.	Higher R_DS(on) increases conduction loss; lacks thermal pad - requires external heatsink above 35 A.	Preferable only when gate drive is limited to <30 nC budget and thermal constraints allow higher R_thJA.
STL220N3LLH6	R_DS(on) = 1.8 mΩ @ 10 V; Q_G = 52 nC; same PG-TDSON-8 package with exposed drain.	Higher Q_G increases driver loss and limits max switching frequency to ~700 kHz.	Acceptable where lower gate charge is not critical but ST's automotive qualification adds value for transport applications.

Compared with IRLHS6342TRPBF and STL220N3LLH6, IPD090N03LGBTMA1 delivers the lowest R_DS(on) × Q_G product among SO-8 30 V MOSFETs, enabling highest efficiency in space-constrained, high-current DC-DC stages without compromising thermal performance.

Availability

IPD090N03LGBTMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and telecom DC-DC modules requiring stable component supply and long-term production continuity.

Supply support for IPD090N03LGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ 30 V logic-level MOSFET family, engineered specifically for high-current, high-frequency switching in compact power conversion systems where thermal and electrical efficiency are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is derated to 58 A per the Safe Operating Area (SOA) curve in Infineon's datasheet Rev. 2.2. This reflects thermal limitation of the PG-TDSON-8 package under sustained conduction, not silicon capability.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No - the exposed drain pad is internally connected to all drain pins (1, 2, 3, 4, 5, 7, 8) and must be soldered to a dedicated PCB copper pour tied to the high-side DC bus or switching node. It is not isolated and must be treated as a live high-voltage node.

Does this MOSFET require a gate resistor for EMI suppression in 500 kHz switching?

Yes - a 4.7 Ω to 10 Ω gate resistor is recommended to dampen ringing caused by parasitic L_g–C_iss resonance. The device's low C_iss (3700 pF) and Q_G (45 nC) make it sensitive to layout-induced oscillation without controlled gate edge rates.

Can IPD090N03LGBTMA1 replace IPB090N03L3 G in an existing design?

Yes - both are 30 V, logic-level N-channel MOSFETs in PG-TDSON-8 packages with identical pinout and thermal pad layout. IPD090N03LGBTMA1 offers 0.2 mΩ lower R_DS(on) and 3 nC lower Q_G, yielding measurable efficiency gain without layout or driver changes.

IPD090N03LGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD090N03LGBTMA1 FAQ

1.How can I place an order for IPD090N03LGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD090N03LGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD090N03LGBTMA1 reliable?

The price and inventory of IPD090N03LGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD090N03LGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD090N03LGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD090N03LGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD090N03LGBTMA1?

IPD090N03LGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD090N03LGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD090N03LGBTMA1?

For technical support, including IPD090N03LGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD090N03LGBTMA1 requirements.

6.How does Aetrix verify that IPD090N03LGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD090N03LGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD090N03LGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD090N03LGBTMA1?

All IPD090N03LGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD090N03LGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD090N03LGBTMA1 part is unused and in its original packaging.

Return procedure for IPD090N03LGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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