Infineon Technologies IPD096N08N3GBTMA1

Overview

IPD096N08N3GBTMA1 from Infineon Technologies is an N-channel 80 V, 9.6 mΩ OptiMOS™ 3 power MOSFET in PG-TO252-3 package, rated for 73 A continuous drain current at T_C = 25 °C and optimized for high-frequency DC/DC converters. It features 100% avalanche tested ruggedness, 26–35 nC total gate charge, and a 1.5 K/W junction-to-case thermal resistance.

For engineers reviewing the IPD096N08N3GBTMA1 datasheet, IPD096N08N3GBTMA1 pinout, IPD096N08N3GBTMA1 application, or IPD096N08N3GBTMA1 equivalent, key selection criteria include R_DS(on) vs. gate drive voltage, Q_g/Q_gd trade-offs for switching loss, SOA robustness under pulse loads, and thermal performance on FR4 PCBs with 6 cm² copper area.

Technical Context

This device employs trench-based silicon technology with optimized cell pitch and gate oxide design to achieve low gate charge × R_DS(on) figure-of-merit (FOM) of ~200 mΩ·nC. Its 80 V V_(BR)DSS rating and 90 mJ single-pulse avalanche energy support operation in 48 V bus systems with transient overvoltage tolerance.

The integrated body diode exhibits 1.0–1.2 V forward voltage at 46 A and 57 ns reverse recovery time, enabling synchronous rectification in buck converters without external Schottky replacement. Gate threshold voltage is tightly distributed between 2.0–3.5 V, ensuring stable turn-on with standard 5 V or 10 V logic-level drivers.

Key Specifications

Pinout & Package

IPD096N08N3GBTMA1 uses the PG-TO252-3 (DPAK) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard DPAK footprint: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with IPB096N08N3 G, this part trades package thermal performance for smaller footprint; versus IRF540NPBF, it delivers 4.6× lower R_DS(on), 2.7× lower Q_g, and guaranteed avalanche ruggedness-critical for modern high-density power conversion.

Availability

IPD096N08N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPD096N08N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 power transistor product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, telecom, and industrial power supplies.

FAQ

What is the maximum recommended gate drive voltage for IPD096N08N3GBTMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Using 10 V ensures full enhancement with minimal R_DS(on) (7.9–9.6 mΩ), while 5 V drive yields higher on-resistance (10.5–17.8 mΩ). Exceeding 12 V provides diminishing returns and increases gate oxide stress risk over lifetime.

Can IPD096N08N3GBTMA1 replace older MOSFETs like IRFZ44N in existing designs?

Direct replacement is possible only if layout accommodates PG-TO252-3 footprint and gate drive supports 10 V logic levels. While R_DS(on) is 4.5× lower than IRFZ44N's 28 mΩ, its faster switching (30 ns rise time vs. 60 ns) may increase EMI; snubber tuning and gate resistor adjustment are required to maintain stability.

Does IPD096N08N3GBTMA1 require a heatsink in typical 48 V to 12 V buck converter operation?

At 46 A continuous current and 100 kHz switching, junction temperature rises ~75 °C above case with 6 cm² PCB copper cooling. A small clip-on heatsink or forced airflow is recommended for ambient >60 °C or duty cycles >70%. The 1.5 K/W R_thJC enables effective passive cooling when mounted directly to metal chassis.

Is the body diode suitable for synchronous rectification without external drivers?

Yes-the integrated body diode has 1.0–1.2 V forward voltage at 46 A and 57 ns reverse recovery time, making it viable for synchronous rectification in buck converters up to 1 MHz. However, for optimal efficiency, use gate-controlled synchronous FETs instead of relying solely on body diode conduction during dead-time intervals.