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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD09N03LA G

Name: IPD09N03LA G
Brand: Infineon Technologies
SKU: IPD09N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD09N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD09N03LA G.pdf

Description:: MOSFET N-CH 25V 50A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD09N03LA G from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-frequency DC/DC converters, featuring 25 V V_DS, 8.6 mΩ R_DS(on) (SMD version), 50 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It delivers low gate charge × R_DS(on) figure-of-merit and superior thermal resistance (R_thJC = 2.4 K/W) for compact power stages in server VRMs and POL converters.

For engineers reviewing the IPD09N03LA G datasheet, IPD09N03LA G pinout, IPD09N03LA G application, or IPD09N03LA G equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 7.2–8.6 mΩ R_DS(on) at 10 V, 10–13 nC total gate charge, 1235–1642 pF input capacitance, and TO-252-3 (PG-TO252-3-11) package with exposed drain pad for thermal performance.

Technical Context

This OptiMOS®2 device uses a trench-gate silicon process to achieve low R_DS(on) and fast switching with controlled Q_gd/Q_gs ratio (typ. 0.52). Its gate threshold voltage (1.2–2.0 V) enables reliable turn-on with 3.3 V or 5 V logic controllers, while the integrated body diode supports synchronous rectification with 10 nC Q_rr and 0.97–1.2 V V_SD at 50 A.

The MOSFET operates up to 175 °C junction temperature and meets JEDEC qualification for industrial power conversion. Its dynamic parameters-including 7–10 ns t_d(on), 5.6–8.4 ns t_r, and 20–30 ns t_d(off)-are characterized under standard 15 V V_DD, 25 A I_D, and 2.7 Ω gate resistor conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) max (V_GS=10 V)	8.6 mΩ - Enables <1.5 W conduction loss at 50 A in POL stage
Q_g total	10–13 nC - Supports >1 MHz switching with moderate gate driver strength
I_D continuous (T_C=25 °C)	50 A - Rated for high-current output stages using PCB copper as heatsink
R_thJC	2.4 K/W - Allows direct thermal coupling to heatsink or copper plane for thermal management
E_AS	75 mJ - Withstands single-pulse inductive energy in hard-switched converters
Q_rr	10 nC - Reduces reverse recovery loss and EMI in synchronous buck topologies

Pinout & Package

IPD09N03LA G is housed in PG-TO252-3-11 (P-TO252-3-11) package: surface-mount, 3-pin, exposed drain pad on bottom for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives logic-level PWM signal; low 1 Ω gate resistance minimizes ringing
Pin 2 (Drain)	High-side or low-side switch node	Exposed metal tab - must be connected to PCB copper pour for thermal path and current return
Pin 3 (Source)	Reference node for gate drive	Provides local ground reference for gate driver; critical for noise immunity in high-dI/dt layouts

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on at V_GS ≥ 4.5 V - compatible with 3.3 V microcontrollers and dedicated gate drivers
Low Q_g × R_DS(on)	Typ. 85 mΩ·nC - balances switching loss and conduction loss for 500 kHz–2 MHz operation
175 °C rated junction	Enables derating-free operation in sealed enclosures or high ambient environments
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 - suitable for industrial and telecom power supplies
RoHS-compliant lead plating	Pb-free finish with proven solderability and long-term intermetallic stability

Applications

Server VRM

Industrial DC/DC Converter

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter.

Use Value: 8.6 mΩ R_DS(on) and 10 nC Q_rr reduce conduction and recovery losses, improving efficiency by ≥0.8% at 40 A load.

Use Scenario: Isolated 24 V to 5 V/12 V conversion in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant topology.

Use Value: 25 V rating and 75 mJ E_AS support safe operation during transient overloads and startup surges.

Telecom Power Supply

Automotive ADAS Power Module

Use Scenario: 48 V intermediate bus converter in base station RF power amplifiers.

IC Role / Device Role / Timing Role: High-frequency switch in non-isolated buck regulator feeding FEM bias rails.

Use Value: 1235–1642 pF C_iss and 5.6–8.4 ns t_r enable clean 1 MHz switching with minimal gate drive power.

Use Scenario: Power delivery to radar sensor SoCs in 12 V automotive domain controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback supply.

Use Value: 175 °C T_j,max and -55 °C T_stg meet AEC-Q101 extended temperature requirements without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	30 V V_DS, 12.5 mΩ R_DS(on) @ 4.5 V, SOT-23 package, lower current rating (4.3 A)	Not suitable for >10 A loads; limited thermal mass and power dissipation	Select only for ultra-compact, low-power auxiliary rails where footprint is critical
STL130N3LLH6	30 V V_DS, 3.8 mΩ R_DS(on) @ 10 V, PowerFLAT 5x6 package, higher gate charge (22 nC)	Better conduction loss but slower switching; requires stronger gate driver	Prefer when conduction loss dominates and switching frequency ≤ 500 kHz

Compared with IRLML6344TRPBF and STL130N3LLH6, IPD09N03LA G uniquely balances 50 A current capability, 8.6 mΩ R_DS(on), and 10–13 nC Q_g in a thermally robust TO-252 package-making it optimal for high-density, high-efficiency 12–24 V input DC/DC stages operating above 500 kHz.

Availability

IPD09N03LA G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, telecom power supplies, and automotive ADAS power modules requiring stable component supply across multi-year production cycles.

Supply support for IPD09N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFETs and wide-bandgap devices.

This part belongs to the OptiMOS®2 family-designed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum recommended gate-source voltage for IPD09N03LA G?

The absolute maximum V_GS is ±20 V per datasheet Rev. 2.12. For reliable long-term operation, gate drive should be clamped to ≤15 V, especially in high-noise environments. Exceeding 15 V does not improve R_DS(on) significantly beyond 10 V and increases risk of gate oxide stress during transients.

Can IPD09N03LA G be used in avalanche mode?

Yes-it is rated for single-pulse avalanche energy of 75 mJ at I_D = 45 A and R_GS = 25 Ω. However, repetitive avalanche operation is not specified or guaranteed. Designers must ensure layout and gate drive prevent unintended avalanche during normal switching transitions.

Is the TO-252-3 package lead-free and RoHS compliant?

Yes-IPD09N03LA G features Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The package uses matte tin (Sn) finish on all external terminals, verified per JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for unlimited floor life at ≤30 °C/60% RH.

How does thermal resistance change when mounted on a 6 cm² copper area?

With a 6 cm² (one-layer, 70 µm thick) FR4 PCB copper area for drain connection, R_thJA drops to 50 K/W (vs. 75 K/W for minimal footprint). This configuration allows 63 W power dissipation at T_C = 25 °C and supports sustained 45 A operation at T_C = 100 °C per datasheet derating curves.

IPD09N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1642 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD09N03LA G FAQ

1.How can I place an order for IPD09N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD09N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD09N03LA G reliable?

The price and inventory of IPD09N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD09N03LA G is usually 5 days.

3.What payment methods are accepted for IPD09N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD09N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD09N03LA G?

IPD09N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD09N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD09N03LA G?

For technical support, including IPD09N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD09N03LA G requirements.

6.How does Aetrix verify that IPD09N03LA G is sourced from the original manufacturer or authorized distributors?

All IPD09N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD09N03LA G meets industry standards.

7.What is the process for return or replacement of IPD09N03LA G?

All IPD09N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPD09N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD09N03LA G part is unused and in its original packaging.

Return procedure for IPD09N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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