Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD09N03LB G

Name: IPD09N03LB G
Brand: Infineon Technologies
SKU: IPD09N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD09N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD09N03LB G.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,937

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD09N03LB G from Infineon Technologies is a 30 V, logic-level N-channel Power MOSFET in PG-TO252-3-11 package, optimized for high-frequency DC/DC converters. It delivers R_DS(on) ≤ 9.1 mΩ (SMD version) at V_GS = 10 V and I_D = 50 A, supports 175 °C operation, and features low gate charge (Q_g = 10–13 nC) and excellent FOM (gate charge × R_DS(on)). Used in synchronous buck converters for server VRMs and telecom power supplies.

For engineers reviewing the IPD09N03LB G datasheet, IPD09N03LB G pinout, IPD09N03LB G application, or IPD09N03LB G equivalent, key selection criteria include its 9.1 mΩ R_DS(on) at 4.5 V gate drive, 2.6 K/W junction-to-case thermal resistance, 50 A continuous drain current at T_C = 25 °C, and robust 57 mJ single-pulse avalanche energy rating.

Technical Context

This OptiMOS®2 device employs trench-gate superjunction technology to achieve low conduction loss and fast switching with minimal Q_gd/Q_gs ratio (typ. 0.65). Its gate plateau voltage of 3.4 V enables stable turn-on under noisy gate-drive conditions in high-dV/dt environments.

The integrated body diode exhibits low reverse recovery charge (Q_rr ≤ 10 nC) and high dv/dt ruggedness (6 kV/µs), supporting hard-switched synchronous rectification without external Schottky assistance in 48 V input DC/DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V and 48 V bus systems
R_DS(on) max (SMD)	9.1 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at 50 A in compact PCB layouts
Q_g	10–13 nC - Reduces gate driver power demand and switching loss in >500 kHz converters
R_thJC	2.6 K/W - Allows direct heatsink mounting for thermal management in high-power density designs
E_AS	57 mJ - Withstands transient overloads without failure in unregulated input conditions
dv/dt immunity	6 kV/µs - Ensures reliable operation during fast voltage transients in isolated topologies
I_D continuous	50 A at T_C = 25 °C - Supports high-current output stages with minimal paralleling

Pinout & Package

PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Logic-level input requiring ≥4.5 V for full enhancement; low C_iss (1200–1600 pF) minimizes drive loss
Pin 2 (D)	Drain	Exposed copper tab - primary thermal path to heatsink; electrically connected to drain potential
Pin 3 (S)	Source	Reference node for gate drive; ties to low-side switch source or controller ground return

Key Features

Feature	Design Value
N-channel logic-level gate	Threshold voltage 1.2–2.0 V enables direct drive from 3.3 V/5 V controllers without level-shifting
Optimized FOM (Q_g × R_DS(on))	~90 nC·mΩ - balances switching and conduction losses for peak efficiency at 300–1000 kHz
175 °C rated junction	Enables operation in sealed enclosures or high-ambient industrial environments without derating
Robust body diode	Q_rr ≤ 10 nC and 350 A pulsed I_S,pulse support synchronous rectification with low EMI

Applications

Server VRM Phase Legs

Telecom 48 V DC/DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved phase leg; switches at 600–800 kHz with tight dead-time control.

Use Value: 9.1 mΩ R_DS(on) reduces conduction loss by >25% vs. legacy 12 mΩ devices, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Isolated forward or active-clamp forward converter converting 48 V input to 12 V/5 V outputs for base station radios.

IC Role / Device Role / Timing Role: Primary-side switch operating at 300–500 kHz with 50% duty cycle; handles 50 A peak drain current.

Use Value: 57 mJ E_AS withstands reflected voltage spikes during transformer reset, eliminating snubber complexity.

Industrial PLC Power Supplies

Automotive ADAS Domain Controllers

Use Scenario: Non-isolated buck converter deriving 3.3 V/5 V rails from 24 V vehicle or factory bus.

IC Role / Device Role / Timing Role: High-side switch in high-side buck topology; driven by bootstrap gate driver with 100 ns propagation delay.

Use Value: 6 kV/µs dv/dt immunity prevents false turn-on during rapid bus transients in noisy factory EMI environments.

Use Scenario: Point-of-load regulator powering radar SoCs and camera ISPs in autonomous driving ECUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter; operates at 350–600 kHz with zero-voltage switching.

Use Value: Low Q_rr (≤10 nC) and soft-recovery body diode minimize switching loss and EMI during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 12 mΩ @ 10 V; higher Q_g (21 nC); TO-220 package	Larger footprint and worse thermal resistance (R_thJC = 3.0 K/W); less suitable for high-density SMD designs	Prefer IPD09N03LB G where board space and thermal performance are constrained
STL110N3LLH6	R_DS(on) = 9.5 mΩ @ 4.5 V; lower V_BR(DSS) (25 V); same DPAK-3 package	Not rated for 48 V bus systems due to lower breakdown; limited to 24 V input applications	Select IPD09N03LB G for 30 V/48 V-compatible designs requiring margin above nominal bus

Compared with IRL3803PBF and STL110N3LLH6, IPD09N03LB G offers superior thermal performance (2.6 K/W), tighter R_DS(on) tolerance at logic-level drive, and higher avalanche robustness-making it optimal for high-reliability, high-frequency DC/DC stages where thermal headroom and transient resilience are critical.

Availability

IPD09N03LB G is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPD09N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100 standards.

This device belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial power supplies where low R_DS(on), fast switching, and thermal reliability are essential.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The absolute maximum V_GS is ±20 V, but continuous operation should be limited to ±16 V per JEDEC J-STD-20 guidelines. Exceeding this risks gate oxide degradation over time, especially at elevated junction temperatures (>125 °C). The device's typical gate threshold is 1.6 V, and gate plateau occurs at 3.4 V-designs should ensure gate drive stays within 0–12 V for logic-level compatibility and long-term reliability.

Can IPD09N03LB G be used as a high-side switch in a floating configuration?

Yes, when paired with a bootstrap or isolated gate driver capable of delivering ≥10 V to the gate relative to the source. Its logic-level threshold allows operation with 5 V or 3.3 V controllers using level-shifting, and its 30 V V_DS rating supports high-side use in 24 V systems. However, the PG-TO252-3-11 package requires careful PCB layout to manage source inductance and avoid shoot-through during commutation.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 0.96–1.2 V at 48 A and Q_rr ≤ 10 nC, offering lower forward drop than standard silicon diodes but higher than 0.5 V Schottkys. In hard-switched topologies, its soft recovery reduces EMI versus fast-recovery diodes, though for ultra-low-loss 12 V output stages, a parallel Schottky may still be preferred below 10 A loads.

Is the PG-TO252-3-11 package RoHS-compliant and lead-free?

Yes, IPD09N03LB G uses Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The package meets JEDEC moisture sensitivity level MSL-1 (unlimited floor life at ≤30 °C/85% RH), and solder reflow profiles must follow IPC/JEDEC J-STD-020, with peak temperature not exceeding 260 °C for ≤30 seconds.

IPD09N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD09N03LB G FAQ

1.How can I place an order for IPD09N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD09N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD09N03LB G reliable?

The price and inventory of IPD09N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD09N03LB G is usually 5 days.

3.What payment methods are accepted for IPD09N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD09N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD09N03LB G?

IPD09N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD09N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD09N03LB G?

For technical support, including IPD09N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD09N03LB G requirements.

6.How does Aetrix verify that IPD09N03LB G is sourced from the original manufacturer or authorized distributors?

All IPD09N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD09N03LB G meets industry standards.

7.What is the process for return or replacement of IPD09N03LB G?

All IPD09N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPD09N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD09N03LB G part is unused and in its original packaging.

Return procedure for IPD09N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…