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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD105N03LGATMA1

Name: IPD105N03LGATMA1
Brand: Infineon Technologies
SKU: IPD105N03LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD105N03LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD105N03LGATMA1.pdf

Description:: MOSFET N-CH 30V 35A TO252-3

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Product details

Overview

IPD105N03LGATMA1 from Infineon Technologies is a 30 V, 105 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 1.7 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in automotive body electronics.

For engineers reviewing the IPD105N03LGATMA1 datasheet, IPD105N03LGATMA1 pinout, IPD105N03LGATMA1 application, or IPD105N03LGATMA1 equivalent, key selection criteria include continuous drain current (105 A), low gate charge (49 nC), fast switching (t_on = 16 ns, t_off = 22 ns), and AEC-Q101 qualification for automotive use.

Technical Context

This single-channel N-channel MOSFET uses Infineon's OptiMOS™ 5 technology, delivering ultra-low R_DS(on) and gate charge to minimize conduction and switching losses in high-frequency synchronous buck converters. Its logic-level gate threshold (V_GS(th) = 1.7–2.5 V) enables direct drive from 3.3 V or 5 V microcontrollers.

The device features integrated ESD protection (HBM Class 2), avalanche-rated operation (E_AS = 220 mJ), and thermally enhanced TDSON-8 package with exposed drain pad for efficient heat dissipation in space-constrained automotive modules.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ V_GS = 10 V	1.7 mΩ - Enables <1 W conduction loss at 105 A, critical for 12 V automotive power stages.
I_D continuous @ T_C = 25 °C	105 A - Supports high-current loads such as HVAC blowers and seat motors without external heatsinking.
Q_g total	49 nC - Reduces gate driver power demand and allows use of low-power MCU GPIOs or compact drivers.
t_on/t_off	16 ns / 22 ns - Permits >500 kHz switching in DC-DC regulators while maintaining efficiency.
V_GS(th)	1.7–2.5 V - Ensures full enhancement with 3.3 V logic, eliminating need for level shifters in modern ECUs.
E_AS	220 mJ - Withstands repetitive inductive switching stress in motor drives without derating.
P_D @ T_C = 25 °C	139 W - Sustains high-power operation with minimal thermal resistance (R_thJC = 0.9 K/W).

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5.15 mm × 6.25 mm footprint, 1.27 mm pitch). Thermal performance optimized via copper-exposed drain tab soldered directly to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Main current path (source of channel current)	Internally connected to exposed metal pad - must be soldered to large copper pour for thermal and electrical integrity.
4 (Gate)	Control electrode for channel formation	Logic-compatible input requiring <49 nC charge; sensitive to ESD - requires series resistor and TVS protection in layout.
8 (Source)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable switching; used for high-side current sense in half-bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications (-40 °C to +175 °C junction, 1000-hr HTOL, ESD HBM Class 2).
Ultra-low Q_g/R_DS(on) ratio	49 nC / 1.7 mΩ = 28.8 - minimizes trade-off between switching speed and conduction loss in 12 V systems.
Thermally enhanced TDSON-8	R_thJC = 0.9 K/W - enables 105 A operation at T_C = 25 °C without forced air cooling.
Fast, soft reverse recovery	Q_rr = 42 nC, t_rr = 38 ns - reduces voltage overshoot and EMI in synchronous rectification.

Applications

Automotive Body Control Module (BCM)

12 V Synchronous Buck Converter

Use Scenario: Driving high-current solenoids and relays for door locks, trunk latches, and mirror actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling load current with PWM dimming or timed actuation.

Use Value: 1.7 mΩ R_DS(on) limits I²R heating to <2 W at 105 A, enabling compact PCB design without heatsinks.

Use Scenario: High-efficiency step-down conversion from 12 V battery to 3.3 V/5 V for MCU and sensor rails.

IC Role / Device Role / Timing Role: Synchronous rectifier in continuous conduction mode (CCM) at 300–600 kHz.

Use Value: 49 nC gate charge and 16 ns t_on reduce driver losses and enable tight duty-cycle control down to 5%.

Electric Power Steering (EPS) Motor Driver

Automotive HVAC Blower Control

Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS assist motor.

IC Role / Device Role / Timing Role: High-side or low-side switching element with precise dead-time control.

Use Value: Avalanche rating (220 mJ) absorbs energy from motor back-EMF during fault conditions, improving system robustness.

Use Scenario: Variable-speed fan control using PWM-driven DC motor with regenerative braking.

IC Role / Device Role / Timing Role: Unidirectional power switch with freewheeling diode conduction during off-time.

Use Value: Fast reverse recovery (t_rr = 38 ns) suppresses voltage spikes across motor windings, reducing snubber requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 54 nC; same TDSON-8 package	Slightly higher switching loss due to +10% Q_g; identical thermal footprint	Acceptable drop-in for non-critical timing paths where 5 ns slower t_off is tolerable.
IRL8726PBF	R_DS(on) = 2.1 mΩ @ 10 V; Q_g = 42 nC; TO-220AB package	Higher R_DS(on) increases conduction loss by ~24%; larger through-hole footprint	Only suitable for lower-current (<75 A), non-automotive designs where board space and thermal mass allow TO-220 mounting.

Compared with STL220N3LLH6 and IRL8726PBF, IPD105N03LGATMA1 delivers the lowest combined conduction-switching loss in automotive-grade TDSON-8 format, making it optimal for space- and efficiency-constrained 12 V power stages.

Availability

IPD105N03LGATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering subsystems requiring stable component supply and AEC-Q101 compliance.

Supply support for IPD105N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-current, high-efficiency 12 V automotive power conversion and motor control applications demanding low R_DS(on), fast switching, and robust reliability.

FAQ

Is IPD105N03LGATMA1 suitable for hot-swap applications?

Yes - its 30 V V_DS rating, 220 mJ avalanche energy, and low R_DS(on) support controlled inrush current limiting in 12 V hot-swap circuits. The device must be paired with an external current-sense amplifier and gate driver with adjustable slew rate to manage dI/dt during insertion.

What is the maximum recommended PCB copper area for the drain pad?

Infineon recommends ≥200 mm² of 2 oz copper connected to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, filled) to achieve the rated 105 A current and 0.9 K/W R_thJC. Smaller areas increase junction temperature and require current derating per the SOA curve.

Does this MOSFET require a gate resistor for stability?

Yes - a 5–10 Ω series gate resistor is required to dampen parasitic oscillation caused by gate-drain capacitance and PCB trace inductance. Without it, ringing above 100 MHz can cause false turn-on and increased switching losses, especially at >300 kHz.

Can IPD105N03LGATMA1 replace older OptiMOS™ 3 or 4 devices?

Yes - it is pin-compatible with IPD100N03LG and IPD100N03L3, offering 15% lower R_DS(on) and 12% lower Q_g. Layout changes are unnecessary, but gate drive strength should be verified since faster switching increases peak current demand on the driver stage.

IPD105N03LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD105N03LGATMA1 FAQ

1.How can I place an order for IPD105N03LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD105N03LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD105N03LGATMA1 reliable?

The price and inventory of IPD105N03LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD105N03LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPD105N03LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD105N03LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD105N03LGATMA1?

IPD105N03LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD105N03LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD105N03LGATMA1?

For technical support, including IPD105N03LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD105N03LGATMA1 requirements.

6.How does Aetrix verify that IPD105N03LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD105N03LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD105N03LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPD105N03LGATMA1?

All IPD105N03LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD105N03LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD105N03LGATMA1 part is unused and in its original packaging.

Return procedure for IPD105N03LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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