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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD105N04LGBTMA1

Name: IPD105N04LGBTMA1
Brand: Infineon Technologies
SKU: IPD105N04LGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD105N04LGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD105N04LGBTMA1.pdf

Description:: MOSFET N-CH 40V 40A TO252-3

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Product details

Overview

IPD105N04LGBTMA1 from Infineon Technologies is a 40 V, 105 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 2.7 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in automotive body electronics.

For engineers reviewing the IPD105N04LGBTMA1 datasheet, IPD105N04LGBTMA1 pinout, IPD105N04LGBTMA1 application, or IPD105N04LGBTMA1 equivalent, key selection criteria include its low gate charge (Q_g = 59 nC), fast switching (t_on = 22 ns), thermally enhanced exposed-drain package, and AEC-Q101 qualification for automotive use.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate structure and split-gate design to achieve ultra-low R_DS(on) while maintaining robust avalanche capability (E_AS = 230 mJ) and tight threshold voltage distribution (V_GS(th) = 1.7–2.5 V).

It supports synchronous rectification in 12 V automotive systems, features integrated ESD protection (HBM Class 3A), and delivers stable performance across –40 °C to +175 °C junction temperature range with 100% UIS-tested devices.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ V_GS = 10 V	2.7 mΩ - Enables <1.5 W conduction loss at 105 A continuous drain current in compact PCB layouts.
Q_g total	59 nC - Reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency SMPS.
V_GS(th)	1.7–2.5 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers without level-shifting.
E_AS	230 mJ - Supports unclamped inductive switching in motor drives and solenoid control without external snubbers.
T_j max	+175 °C - Permits operation in under-hood environments and enables derating flexibility for thermal margin.
Package	PG-TDSON-8 (3.3 × 3.3 mm) - Exposed drain pad improves thermal resistance (R_thJA = 40 K/W) and reduces board area vs. SO-8.

Pinout & Package

PG-TDSON-8 package with bottom-side thermal pad and 8-pin layout. Drain terminals occupy pins 1–3 and 5–8; Gate on pin 4; Source on pin 6 (shared with thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
D1–D3, D5–D8	Drain (parallel-connected)	Low-inductance, high-current path to load; all tied internally to exposed copper pad for thermal conduction.
G	Gate	Control input requiring ≤59 nC charge; compatible with 3.3 V/5 V microcontrollers and dedicated gate drivers.
S	Source	Reference node for gate drive and current sensing; connected directly to PCB ground plane via thermal pad.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control modules and ADAS power stages.
100% UIS tested	Each unit withstands unclamped inductive switching stress-critical for relay/solenoid driver reliability.
Low Q_gd/Q_g ratio	0.22 - Minimizes Miller-induced shoot-through risk in half-bridge configurations.
Enhanced dv/dt ruggedness	Rated >50 V/ns - Prevents false turn-on during fast voltage transients in noisy automotive environments.
Halogen-free & RoHS compliant	Meets EU ELV and OEM chemical compliance requirements for vehicle production.

Applications

Automotive Body Control Module

12 V DC-DC Synchronous Buck Converter

Use Scenario: Driving high-current loads such as HVAC actuators, seat motors, and door locks in modern BCMs.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling 10–60 A inductive loads with PWM up to 25 kHz.

Use Value: 2.7 mΩ R_DS(on) cuts conduction losses by >40% vs. legacy SO-8 MOSFETs, reducing heatsink size and system cost.

Use Scenario: Secondary-side synchronous rectifier in 12 V → 3.3/5 V point-of-load converters for infotainment ECUs.

IC Role / Device Role / Timing Role: Fast-switching, low-R_DS(on) rectifier replacing Schottky diodes in 300–500 kHz buck topologies.

Use Value: 59 nC Q_g and 22 ns t_on enable efficient zero-voltage switching (ZVS) operation, improving efficiency by 2.1% at 20 A.

Electric Power Steering (EPS) Motor Driver

LED Headlamp Matrix Driver

Use Scenario: Half-bridge leg in 3-phase inverter driving 12 V EPS assist motors with peak currents >80 A.

IC Role / Device Role / Timing Role: Low-loss, avalanche-rated switching element handling repetitive inductive energy recovery.

Use Value: 230 mJ E_AS rating eliminates need for external clamping circuits, simplifying PCB layout and BOM.

Use Scenario: Individual channel switch for dynamic LED pixel control in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: Precision current-controlled switch enabling PWM dimming at >1 kHz with minimal thermal drift.

Use Value: Tight V_GS(th) tolerance (1.7–2.5 V) ensures consistent turn-on timing across channels, critical for uniform brightness.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N4LF7AG	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 64 nC; same PG-TDSON-8 package	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss by ~11%	Acceptable where thermal margin exists and gate drive capability exceeds 64 nC per cycle.
IRL8721PBF	R_DS(on) = 4.5 mΩ @ 4.5 V; Q_g = 22 nC; TO-220AB package	Larger footprint and higher R_DS(on); lacks AEC-Q101 qualification and automotive temperature rating	Only suitable for non-automotive industrial designs where space and qualification are not constraints.

Compared with STL110N4LF7AG and IRL8721PBF, IPD105N04LGBTMA1 offers the lowest R_DS(on), highest automotive qualification rigor, and smallest thermal footprint-making it optimal for space-constrained, high-reliability 12 V automotive power stages.

Availability

IPD105N04LGBTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering systems requiring stable component supply and long-term lifecycle support.

Supply support for IPD105N04LGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

This device belongs to the OptiMOS™ 5 family, engineered specifically for high-current, low-voltage automotive power conversion-emphasizing low R_DS(on), fast switching, and AEC-Q101 reliability in harsh environments.

FAQ

Is IPD105N04LGBTMA1 suitable for hot-swap applications?

Yes-it supports controlled inrush current limiting when used with appropriate gate drive circuitry. Its 230 mJ avalanche energy rating and 100% UIS testing ensure robustness against transient overvoltage during plug-in events in 12 V systems, provided layout minimizes parasitic inductance.

What is the maximum recommended PCB copper area for thermal relief?

Infineon recommends ≥200 mm² of 2 oz (70 µm) copper connected to the exposed drain pad, with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground planes. This achieves R_thJA ≈ 40 K/W in standard 4-layer boards.

Does this MOSFET require a gate resistor for stability in PWM operation?

A 4.7 Ω series gate resistor is recommended to dampen ringing and limit peak gate current. The device's low Q_gd/Q_g ratio (0.22) inherently suppresses Miller oscillation, but external damping ensures clean switching waveforms at >300 kHz frequencies.

Can IPD105N04LGBTMA1 replace older OptiMOS™ 4 devices in existing designs?

Yes-pin-compatible with IPD100N04LG, offering 15% lower R_DS(on) and 12% lower Q_g. No layout change is needed, though gate drive strength should be verified due to faster switching edges and reduced Miller plateau time.

IPD105N04LGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2V @ 14µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD105N04LGBTMA1 FAQ

1.How can I place an order for IPD105N04LGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD105N04LGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD105N04LGBTMA1 reliable?

The price and inventory of IPD105N04LGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD105N04LGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD105N04LGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD105N04LGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD105N04LGBTMA1?

IPD105N04LGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD105N04LGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD105N04LGBTMA1?

For technical support, including IPD105N04LGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD105N04LGBTMA1 requirements.

6.How does Aetrix verify that IPD105N04LGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD105N04LGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD105N04LGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD105N04LGBTMA1?

All IPD105N04LGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD105N04LGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD105N04LGBTMA1 part is unused and in its original packaging.

Return procedure for IPD105N04LGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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