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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD10N03LA

Name: IPD10N03LA
Brand: Infineon Technologies
SKU: IPD10N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD10N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD10N03LA.pdf

Description:: MOSFET N-CH 25V 30A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD10N03LA from Infineon Technologies is a logic-level N-channel OptiMOS™2 power MOSFET in PG-TO252-3-11 package, rated for 25 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 10.4 mΩ R_DS(on) at V_GS = 10 V, designed for high-frequency DC/DC converters requiring low gate charge and superior thermal resistance (R_thJC = 2.9 K/W).

For engineers reviewing the IPD10N03LA datasheet, IPD10N03LA pinout, IPD10N03LA application, or IPD10N03LA equivalent, this device supports fast-switching synchronous rectification, logic-level gate drive compatibility down to 4.5 V, and operation up to 175 °C junction temperature in thermally constrained PCB layouts.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency switching in buck converters and OR-ing circuits. Its 2.9 K/W junction-to-case thermal resistance and 175 °C maximum operating temperature support sustained 30 A conduction under forced-air or minimal copper-area cooling.

Dynamic parameters include C_iss = 1358 pF (typ), Q_g = 9.6 nC (typ), t_r = 7.2 ns (max), and Q_gd = 3.5 nC (max), confirming suitability for >500 kHz switching with controlled dv/dt (6 kV/µs) and robust avalanche capability (E_AS = 80 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in point-of-load converters
R_DS(on) max	10.4 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 30 A, critical for high-current output stages
Q_g	11 nC max - Low total gate charge reduces driver power and enables efficient 500+ kHz operation
R_thJC	2.9 K/W - Allows direct heatsinking via drain pad; supports 53 A theoretical chip current before bondwire limit
E_AS	80 mJ - Rated single-pulse avalanche energy ensures reliability during inductive turn-off transients
T_j,max	175 °C - Extended temperature rating permits operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IPD10N03LA uses the PG-TO252-3-11 surface-mount package with exposed drain pad (Pin 2) for thermal and electrical connection. The three terminals are arranged in standard DPAK footprint with G–D–S pin order (viewed from top, marking side).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Low-side reference node; connects to ground or power return path; carries full load current
Pin 2 (Drain)	Drain terminal with exposed copper pad	Primary power output node; electrically and thermally connected to PCB copper area for heat dissipation
Pin 3 (Gate)	Control input for channel conduction	High-impedance input requiring <11 nC charge; compatible with 3.3 V/5 V logic drivers due to 1.2–2.0 V V_GS(th)

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS ≥ 4.5 V, enabling direct interface with microcontrollers and PWM controllers without level-shifting
Optimized FOM (Q_g × R_DS(on))	Typical 9.6 nC × 8.7 mΩ = 83.5 nC·mΩ - balances switching loss and conduction loss for peak efficiency in 300–1000 kHz converters
Enhanced avalanche ruggedness	80 mJ single-pulse E_AS with defined test conditions (I_D = 30 A, R_GS = 25 Ω) - supports reliable operation during hard-switching faults
Thermally robust construction	R_thJC = 2.9 K/W and 175 °C T_j,max - sustains high-power density designs on minimal 6 cm² PCB copper area

Applications

Server VRMs

Automotive DC/DC Converters

Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, switching at 500–800 kHz with precise dead-time control.

Use Value: 10.4 mΩ R_DS(on) and 2.9 K/W R_thJC minimize conduction loss and enable compact thermal design on dense server PCBs.

Use Scenario: 12 V-to-5 V/3.3 V step-down conversion for ADAS camera modules and infotainment ECUs.

IC Role / Device Role / Timing Role: Primary power switch in automotive-grade buck regulator meeting AEC-Q101 stress requirements.

Use Value: JEDEC-qualified operation up to 175 °C junction temperature ensures reliability in under-hood environments.

Industrial PLC Power Supplies

USB-C PD Fast Charging

Use Scenario: Wide-input (9–36 V) isolated flyback or non-isolated buck supplies powering programmable logic controllers.

IC Role / Device Role / Timing Role: Main switch in primary-side regulation or secondary-side synchronous rectification stage.

Use Value: 25 V V_DS rating and 6 kV/µs dv/dt immunity prevent false triggering in noisy factory EMI environments.

Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C Power Delivery adapters.

IC Role / Device Role / Timing Role: Low-V_DS MOSFET replacing Schottky diodes to reduce forward drop and improve efficiency above 50 kHz.

Use Value: 0.93 V V_SD (diode forward voltage) and 30 A I_S rating support high-current 5 A/20 V output without external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD10N03L3 G	Same V_DS (25 V), lower R_DS(on) (8.5 mΩ typ), improved FOM, newer OptiMOS™3 generation	Higher efficiency at high frequency (>1 MHz); requires updated layout for enhanced thermal pad	Select when upgrading for efficiency gain and can accommodate revised thermal land pattern
IRLML6344TRPBF	20 V V_DS, 4.3 A I_D, SOT-23 package, R_DS(on) = 28 mΩ @ 4.5 V - significantly lower current/power capability	Only suitable for sub-5 A loads; not a drop-in replacement for 30 A applications	Consider only for space-constrained, low-power auxiliary rails where thermal budget allows

Compared with IPD10N03L3 G, the IPD10N03LA offers proven thermal robustness and JEDEC qualification for harsh environments but trades ~15% higher R_DS(on); versus IRLML6344TRPBF, it delivers 7× higher current handling and 3× lower on-resistance in a thermally superior package, making it appropriate for main power stages rather than signal-level switching.

Availability

IPD10N03LA is available at Aetrix Electronics and suitable for server VRMs, automotive DC/DC converters, and industrial PLC power supplies requiring stable component supply across extended production lifecycles.

Supply support for IPD10N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFET and IGBT technologies.

The OptiMOS™2 product line targets high-efficiency, high-frequency power conversion in computing, telecom, and automotive applications, emphasizing low R_DS(on), fast switching, and rugged thermal performance.

FAQ

Is IPD10N03LA qualified for automotive applications?

Yes - IPD10N03LA is qualified per JEDEC standards for target applications and meets AEC-Q101 stress test requirements for discrete semiconductors. It supports 175 °C operation and is used in automotive DC/DC converters, though system-level qualification remains the responsibility of the end designer.

What is the recommended gate resistor value for 500 kHz switching?

A 2.7 Ω gate resistor is specified in the datasheet for 500 kHz testing (V_DD = 15 V, I_D = 15 A). This value balances switching speed (t_r/t_f < 7.2/4.2 ns) and gate oscillation damping; values between 1.5 Ω and 4.7 Ω are typical for this FET in hard-switched buck topologies.

Can IPD10N03LA be used in synchronous rectification with 3.3 V gate drive?

Yes - its logic-level threshold (V_GS(th) = 1.2–2.0 V) and guaranteed R_DS(on) at V_GS = 4.5 V make it compatible with 3.3 V drivers when paired with appropriate gate boosting or adaptive timing. At 3.3 V, R_DS(on) rises to ~20 mΩ (typ), increasing conduction loss by ~90% versus 10 V drive.

Does the TO252-3-11 package require solder paste stencil optimization?

Yes - the exposed drain pad demands controlled solder volume to ensure void-free thermal interface and mechanical reliability. Recommended stencil aperture is 80–90% of pad area with 0.12 mm thickness; reflow profile must include soak zone to prevent pad lifting and ensure full wetting of the large copper area.

IPD10N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1358 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD10N03LA FAQ

1.How can I place an order for IPD10N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD10N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD10N03LA reliable?

The price and inventory of IPD10N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD10N03LA is usually 5 days.

3.What payment methods are accepted for IPD10N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD10N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD10N03LA?

IPD10N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD10N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD10N03LA?

For technical support, including IPD10N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD10N03LA requirements.

6.How does Aetrix verify that IPD10N03LA is sourced from the original manufacturer or authorized distributors?

All IPD10N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD10N03LA meets industry standards.

7.What is the process for return or replacement of IPD10N03LA?

All IPD10N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPD10N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD10N03LA part is unused and in its original packaging.

Return procedure for IPD10N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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