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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD10N03LA G

Name: IPD10N03LA G
Brand: Infineon Technologies
SKU: IPD10N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD10N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD10N03LA G.pdf

Description:: MOSFET N-CH 25V 30A TO252-3

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Product details

Overview

IPD10N03LA G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO252-3-11 package, rated for 25 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 10.4 mΩ R_DS(on) at V_GS = 10 V. It delivers high-frequency switching performance in DC/DC converters with 8.2–11 nC total gate charge and 175 °C maximum junction temperature.

For engineers reviewing the IPD10N03LA G datasheet, IPD10N03LA G pinout, IPD10N03LA G application, or IPD10N03LA G equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), 2.9 K/W thermal resistance (junction-to-case), and robust 80 mJ single-pulse avalanche energy rating under defined test conditions.

Technical Context

This device operates as a unidirectional power switch in synchronous buck topologies, leveraging its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V) and fast switching dynamics (t_r = 4.8–7.2 ns, t_f = 2.8–4.2 ns). Its integrated body diode supports freewheeling with 0.93–1.2 V forward voltage at 30 A and 25 °C.

The MOSFET is characterized for stable operation across -55 to +175 °C junction temperature range, with thermal performance validated on FR4 PCBs featuring 6 cm² copper cooling area. Dynamic parameters-including C_iss = 1021–1358 pF and Q_gd = 2.3–3.5 nC-are specified at V_DD = 15 V and I_D = 15 A with 2.7 Ω gate resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage before avalanche onset; defines use in ≤24 V input systems
R_DS(on) max	10.4 mΩ at V_GS = 10 V, I_D = 30 A - Directly determines conduction loss in high-current paths
I_D cont.	30 A at T_C = 25 °C - Limited by bondwire; enables compact heatsinking in space-constrained converters
Q_g total	8.2–11 nC - Governs gate driver power requirement and switching speed trade-off
E_AS	80 mJ (I_D = 30 A, R_GS = 25 Ω) - Quantifies ruggedness against inductive turn-off stress
R_thJC	2.9 K/W - Enables precise junction temperature estimation from case temperature measurements
T_j max	175 °C - Supports operation in high-ambient industrial and automotive under-hood environments

Pinout & Package

IPD10N03LA G uses the PG-TO252-3-11 surface-mount package (also known as D-Pak), with exposed drain pad for thermal dissipation and standard three-terminal configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to power ground or low-side return path
Pin 2 (Gate)	Control electrode	Accepts logic-level (≥4.5 V) drive; requires <11 nC charge for full enhancement
Pin 3 (Drain)	Main current-carrying terminal (exposed pad)	High-current output node; thermally coupled to PCB copper for heat removal

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V ensures full enhancement with 3.3 V or 5 V microcontroller outputs
Low FOM (Q_g × R_DS(on))	~85–115 nC·mΩ - Optimized for high-frequency (>500 kHz) DC/DC efficiency
Enhanced thermal resistance	R_thJC = 2.9 K/W - Reduces thermal derating vs. comparable TO-252 devices
Robust avalanche capability	80 mJ single-pulse E_AS - Withstands transient overvoltage without failure in hard-switched designs
Qualified per JEDEC standards	J-STD-20/JESD22 compliant - Validated for reflow and reliability in production assembly

Applications

Server VRMs

Industrial DC/DC Modules

Use Scenario: High-density 12 V input → 1 V output point-of-load regulation in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) in multiphase buck converter with >600 kHz switching frequency.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >92% efficiency at 30 A load.

Use Scenario: Isolated 24 V to 5 V/12 V conversion in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or LLC resonant topology.

Use Value: 175 °C rating and 80 mJ E_AS ensure reliability during frequent load transients and ambient temperatures up to 85 °C.

Automotive Body Control Units

USB-C PD Power Delivery

Use Scenario: 12 V battery-fed power distribution for lighting, sensors, and actuators in BCM modules.

IC Role / Device Role / Timing Role: Load switch controlling individual 10–20 A subsystems with reverse polarity and short-circuit protection.

Use Value: Integrated body diode enables bidirectional current handling; 2.9 K/W R_thJC allows direct thermal coupling to metal-core PCBs.

Use Scenario: 20 V input stage in 100 W USB-C PD adapter with GaN half-bridge secondary-side synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET replacing Schottky diodes in flyback or active-clamp forward designs.

Use Value: 10.4 mΩ R_DS(on) at 4.5 V V_GS reduces conduction loss versus standard 5 V gate-drive MOSFETs, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD10N03L G	R_DS(on) max = 11.5 mΩ (V_GS = 10 V); same package and pinout	Slightly higher conduction loss; identical thermal and switching specs	Select when cost sensitivity outweighs marginal efficiency gain
IRLML0100TRPBF	R_DS(on) max = 15 mΩ at V_GS = 4.5 V; SOT-23 package; lower current rating (4.3 A)	Not suitable for 30 A applications; limited to low-power auxiliary rails	Use only in sub-5 A bias or control circuits where footprint is critical

Compared with IPD10N03L G, the IPD10N03LA G offers tighter R_DS(on) tolerance and improved FOM; versus IRLML0100TRPBF, it provides 7× higher current capacity and 3× better thermal performance-making it the sole viable choice for ≥20 A DC/DC output stages.

Availability

IPD10N03LA G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and automotive body control units requiring stable component supply and long-term lifecycle support.

Supply support for IPD10N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum safe operating voltage for IPD10N03LA G?

The absolute maximum drain-source voltage is 25 V, as specified in the datasheet under V_(BR)DSS with V_GS = 0 V and I_D = 1 mA. Operation above this voltage risks avalanche breakdown; design margin should maintain V_DS ≤ 20 V in transient conditions to ensure reliability.

Can IPD10N03LA G be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage ranges from 1.2 V to 2.0 V, and it achieves R_DS(on) ≤ 17.4 mΩ at V_GS = 4.5 V and I_D = 20 A. While full enhancement occurs at ≥4.5 V, 3.3 V drive yields usable but higher R_DS(on); for optimal efficiency, a dedicated gate driver or level shifter is recommended.

Does IPD10N03LA G have an integrated ESD protection diode on the gate?

No - the datasheet does not specify gate ESD protection. The gate-source leakage current is rated at ≤100 nA at V_GS = 20 V, and the maximum gate-source voltage is ±20 V. External Zener clamping (e.g., 12 V TVS) is advised in systems prone to handling or layout-induced gate transients.

How does the thermal performance of IPD10N03LA G compare to TO-220 packaged equivalents?

With R_thJC = 2.9 K/W, IPD10N03LA G outperforms typical TO-220 devices (R_thJC ≈ 1.5–2.0 K/W) *only* when mounted on optimized PCBs with ≥6 cm² copper. Its advantage lies in smaller footprint and lower parasitic inductance-not raw thermal resistance-making it superior for high-frequency, space-constrained designs despite slightly higher junction-to-case resistance.

IPD10N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1358 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD10N03LA G FAQ

1.How can I place an order for IPD10N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD10N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD10N03LA G reliable?

The price and inventory of IPD10N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD10N03LA G is usually 5 days.

3.What payment methods are accepted for IPD10N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD10N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD10N03LA G?

IPD10N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD10N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD10N03LA G?

For technical support, including IPD10N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD10N03LA G requirements.

6.How does Aetrix verify that IPD10N03LA G is sourced from the original manufacturer or authorized distributors?

All IPD10N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD10N03LA G meets industry standards.

7.What is the process for return or replacement of IPD10N03LA G?

All IPD10N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPD10N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD10N03LA G part is unused and in its original packaging.

Return procedure for IPD10N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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