Infineon Technologies IPD110N12N3GBUMA1

Overview

IPD110N12N3GBUMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in industrial DC-DC converters and motor drives. It features 120 V V_DS, 11 mΩ R_DS(on) (max) at V_GS = 10 V, 75 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - enabling robust operation in thermally constrained power stages.

For engineers reviewing the IPD110N12N3GBUMA1 datasheet, IPD110N12N3GBUMA1 pinout, IPD110N12N3GBUMA1 application, or IPD110N12N3GBUMA1 equivalent, key selection criteria include its gate charge × R_DS(on) figure-of-merit (FOM), low 1.1 K/W R_thJC, integrated body diode with 90 ns t_rr, and JEDEC-qualified reliability for industrial environments.

Technical Context

This OptiMOS™ 3-generation device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 49–65 nC total gate charge and 22 pF reverse transfer capacitance (C_rss) support efficient hard-switching up to several hundred kHz in buck, half-bridge, and LLC topologies.

The MOSFET integrates a monolithic body diode rated for 75 A continuous forward current and 249 nC reverse recovery charge (Q_rr). Its gate threshold voltage (2–4 V) ensures stable turn-on with standard 10 V gate drivers, and ±20 V V_GS rating supports robust gate drive margin against transients.

Key Specifications

Pinout & Package

IPD110N12N3GBUMA1 is housed in PG-TO251-3 (IPAK) package - a surface-mount variant of TO-251 with isolated drain tab for simplified PCB layout and thermal management. The package features gull-wing leads compatible with standard reflow processes and provides low-inductance source-drain paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 120 V power MOSFET applications.

Compared with IPB110N12N3G, IPD110N12N3GBUMA1 offers superior board-level thermal resistance and smaller footprint, while STP110N12F7 trades higher gate charge for marginal R_DS(on) gain and lacks industrial reliability validation.

Availability

IPD110N12N3GBUMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and telecom PSUs requiring stable component supply across multi-year production cycles.

Supply support for IPD110N12N3GBUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ 3 family - engineered specifically for high-efficiency, high-frequency power conversion in industrial and computing applications where thermal density and switching loss dominate system design.

FAQ

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet Rev. 2.4. Operation above ±15 V increases risk of gate oxide stress and long-term threshold voltage shift. For robust design, gate drive should be clamped at +12 V to +15 V with negative turn-off bias ≤ –5 V to ensure fast, controlled turn-off and prevent shoot-through in half-bridge configurations.

Can IPD110N12N3GBUMA1 be used in avalanche mode for circuit protection?

Yes - it is rated for 120 mJ single-pulse avalanche energy (E_AS) at I_D = 75 A and R_GS = 25 Ω. This capability supports limited-energy inductive turn-off events, such as transformer leakage spikes in flyback or forward converters. However, repetitive avalanche operation is not characterized and must be avoided in production designs.

How does the body diode's reverse recovery performance impact synchronous rectification?

With t_rr = 90 ns and Q_rr = 249 nC at T_j = 25 °C, the body diode introduces measurable recovery loss during zero-voltage switching transitions. In 200–500 kHz synchronous rectifiers, this contributes ~5–8% of total conduction loss. Layout optimization (minimizing loop inductance) and precise dead-time control are essential to mitigate associated voltage overshoot and EMI.

Is the PG-TO251-3 package lead-free and RoHS-compliant?

Yes - the device uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The "UMA1" suffix confirms standard tape-and-reel packaging with moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30 °C/60% RH. No pre-bake is required before reflow soldering per J-STD-020.