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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD122N10N3GBTMA1

Name: IPD122N10N3GBTMA1
Brand: Infineon Technologies
SKU: IPD122N10N3GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD122N10N3GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD122N10N3GBTMA1.pdf

Description:: MOSFET N-CH 100V 59A TO252-3

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Product details

Overview

IPD122N10N3GBTMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO252-3 package, rated for 100 V V_DS, 12.2 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 46 A, with 175 °C maximum junction temperature. It delivers high-frequency switching efficiency and low conduction loss in DC-DC converters and synchronous rectifiers.

For engineers reviewing the IPD122N10N3GBTMA1 datasheet, IPD122N10N3GBTMA1 pinout, IPD122N10N3GBTMA1 application, or IPD122N10N3GBTMA1 equivalent, key selection criteria include its 10.5 mΩ typical R_DS(on), 26–35 nC total gate charge, 1.6 K/W R_thJC, and suitability for thermally constrained industrial power stages requiring robust avalanche capability (E_AS = 70 mJ).

Technical Context

This OptiMOS™ 3-generation device uses trench-gate superjunction technology to achieve a low figure-of-merit (gate charge × R_DS(on)). Its 100 V breakdown voltage and 12.2 mΩ on-resistance support high-efficiency operation in 48 V input systems.

The MOSFET integrates a fast-recovery body diode (t_rr = 61 ns, Q_rr = 103 nC) and exhibits stable threshold voltage (V_GS(th) = 2.0–3.5 V) across –55 to 175 °C, enabling reliable gate drive design in wide-temperature environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus designs with ≥2× voltage margin against transients
R_DS(on) max	12.2 mΩ at V_GS = 10 V, I_D = 46 A - enables <1.5 W conduction loss at 46 A continuous drain current
Q_g	26–35 nC - determines gate driver power requirement and switching speed in hard-switched topologies
E_AS	70 mJ (I_D = 46 A, R_GS = 25 Ω) - provides single-pulse avalanche ruggedness for inductive load switching
R_thJC	1.6 K/W - allows direct thermal path to heatsink; enables 94 W P_tot at T_C = 25 °C
t_rr / Q_rr	61 ns / 103 nC - minimizes reverse recovery losses during synchronous rectification in buck converters
I_D cont	59 A at T_C = 25 °C - defines maximum continuous current under ideal case-cooling conditions

Pinout & Package

IPD122N10N3GBTMA1 is housed in PG-TO252-3 (D-Pak) package with exposed drain pad for thermal and electrical connection. The package complies with RoHS and halogen-free standards per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)	Control input	Receives PWM signal; requires gate driver capable of sourcing/sinking ≥1 A peak for 35 nC charge
Pin 3 (Drain)	Power output / high-side connection	Exposed copper pad - must be soldered to PCB copper pour for thermal management and current conduction

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	325–427 pC·Ω - reduces combined switching + conduction loss in high-frequency SMPS
175 °C operating temperature	Enables use in sealed enclosures or high-ambient environments without derating beyond datasheet curves
Fast body diode (t_rr = 61 ns)	Reduces shoot-through risk and EMI in synchronous rectification when paired with complementary MOSFET
Pb-free, halogen-free construction	Meets IPC-J-STD-020 moisture sensitivity level 1 and EU RoHS Directive 2011/65/EU compliance
JEDEC-qualified reliability	Validated per JESD22-A108 (high-temp operating life) and JESD22-A101 (biased HAST) for industrial applications

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1 V conversion for CPU/GPU core supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter with 300–1000 kHz switching frequency.

Use Value: 12.2 mΩ R_DS(on) and 61 ns t_rr reduce conduction and recovery losses, improving full-load efficiency by ≥0.8% versus legacy 20 mΩ devices.

Use Scenario: Isolated 48 V to 12 V/24 V DC-DC module in PLC and motor drive control units.

IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward or LLC resonant topology.

Use Value: 100 V rating and 70 mJ E_AS withstand repetitive voltage spikes during transformer reset and fault events.

Solar Microinverter Half-Bridge

Automotive On-Board Charger (OBC)

Use Scenario: DC link switching in string-level microinverters interfacing PV panels to grid.

IC Role / Device Role / Timing Role: High-side switch in interleaved half-bridge configuration operating at 100–200 kHz.

Use Value: 1.6 K/W R_thJC and 175 °C T_j(max) allow sustained 46 A operation under solar thermal cycling without forced cooling.

Use Scenario: Secondary-side synchronous rectification in bidirectional AC/DC stage of 3.3–6.6 kW OBC.

IC Role / Device Role / Timing Role: Low-side rectifier in phase-shifted full-bridge with ZVS operation.

Use Value: Low Q_gd/Q_gs ratio (≈0.56) improves ZVS soft-switching margin and reduces gate drive losses at 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7AG	R_DS(on) = 11.5 mΩ (typ), Q_g = 32 nC, PG-TO252-3, same V_DS	Lower R_DS(on) but higher C_oss (480 pF vs. 439 pF) - may increase turn-off loss in hard-switched apps	Prefer for lowest conduction loss where gate drive strength permits higher Q_g
IRLR024NPBF	R_DS(on) = 27 mΩ (max), Q_g = 21 nC, TO-252, legacy Gen 1 process	Higher R_DS(on) increases conduction loss >2×; lacks specified E_AS and t_rr data	Only for cost-sensitive, low-frequency (<100 kHz), non-avalanche-critical replacements

Compared with STL120N10F7AG and IRLR024NPBF, IPD122N10N3GBTMA1 offers balanced FOM, verified avalanche energy, and documented fast body diode behavior - making it preferred for high-reliability, high-frequency industrial and renewable energy systems.

Availability

IPD122N10N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and solar microinverters requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for IPD122N10N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS™ 3 power MOSFET product line, engineered for high-efficiency, high-frequency switching in server, telecom, and renewable energy power supplies.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the standard gate drive voltage for achieving rated R_DS(on). Operation above 15 V increases gate oxide stress and accelerates wear-out; 4.9 V gate plateau voltage indicates strong Miller immunity up to 10 V drive.

Can IPD122N10N3GBTMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increases with T_j) enables inherent current sharing. Thermal coupling via shared PCB copper pour and matched gate drive impedance (≤1.6 Ω external resistor) are required to ensure balanced dynamic current distribution.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the diode supports continuous forward current up to 59 A (same as I_D) and pulse current up to 236 A. Its 1.0–1.2 V V_SD at 46 A and 25 °C ensures low conduction loss, and 61 ns t_rr limits reverse recovery charge to 103 nC, minimizing associated switching loss.

Does this MOSFET require a gate resistor for safe operation?

Yes - a 1.6 Ω external gate resistor is used in the datasheet's switching characterization (Figure 16). This value balances switching speed (t_r = 8 ns, t_f = 5 ns) and gate oscillation damping. Lower values risk ringing and EMI; higher values increase switching loss and thermal stress during transitions.

IPD122N10N3GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 12.2mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD122N10N3GBTMA1 FAQ

1.How can I place an order for IPD122N10N3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD122N10N3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD122N10N3GBTMA1 reliable?

The price and inventory of IPD122N10N3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD122N10N3GBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD122N10N3GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD122N10N3GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD122N10N3GBTMA1?

IPD122N10N3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD122N10N3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD122N10N3GBTMA1?

For technical support, including IPD122N10N3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD122N10N3GBTMA1 requirements.

6.How does Aetrix verify that IPD122N10N3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD122N10N3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD122N10N3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD122N10N3GBTMA1?

All IPD122N10N3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD122N10N3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD122N10N3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD122N10N3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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