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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD12CN10NGATMA1

Name: IPD12CN10NGATMA1
Brand: Infineon Technologies
SKU: IPD12CN10NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD12CN10NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD12CN10NGATMA1.pdf

Description:: MOSFET N-CH 100V 67A TO252-3

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Product details

Overview

IPD12CN10NGATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO252-3 (DPAK) package, rated for 100 V V_DS, 12.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 67 A, with 175 °C maximum junction temperature and optimized for high-frequency switching in DC-DC converters and synchronous rectification stages.

For engineers reviewing the IPD12CN10NGATMA1 datasheet, IPD12CN10NGATMA1 pinout, IPD12CN10NGATMA1 application, or IPD12CN10NGATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), robust avalanche energy rating (154 mJ), and JEDEC-qualified reliability for industrial power conversion designs.

Technical Context

This MOSFET employs trench-based OptiMOS™2 technology to achieve a balance of low conduction loss and fast switching performance. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the 49–65 nC total gate charge supports efficient operation at frequencies up to several hundred kHz.

The device integrates a robust body diode with 105 ns reverse recovery time and 255 nC Q_rr, enabling stable synchronous rectification without external Schottky diodes. Thermal resistance R_thJC is 1.2 K/W, allowing high-power dissipation when mounted on a 6 cm² copper area on FR4 PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - supports 48 V input bus systems with 2× safety margin against transients
R_DS(on) max	12.4 mΩ @ V_GS = 10 V, I_D = 67 A - enables <1 W conduction loss at 67 A continuous drain current
I_D cont	67 A @ T_C = 25 °C - suitable for high-current output stages in server VRMs and telecom PSUs
E_AS	154 mJ - withstands single-pulse inductive energy without failure in hard-switched topologies
Q_g total	49–65 nC - determines gate driver power requirement and switching speed trade-off
t_r/t_f	21–32 ns / 8–12 ns - enables clean edge transitions with minimal switching loss at >200 kHz
T_j max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IPD12CN10NGATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain pad for thermal management. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤±20 V drive; low input capacitance (C_iss = 3250–4320 pF) eases driver selection
Pin 2 (D)	Drain terminal / thermal pad	High-current path and primary heat sink interface; soldered to 6 cm² copper area for R_thJC = 1.2 K/W
Pin 3 (S)	Source terminal	Reference node for gate drive; connects to low-side switch source or synchronous rectifier cathode

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~600–800 nC·mΩ - reduces combined conduction + switching loss in high-frequency SMPS
Body diode Q_rr	255 nC - minimizes reverse recovery loss and EMI in synchronous buck converters
JEDEC qualification	Qualified per J-STD-20/JESD22 - validated for industrial temperature cycling and humidity exposure
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliant - meets global environmental compliance mandates

Applications

Server Voltage Regulator Modules (VRMs)

Telecom DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, operating at 300–600 kHz with precise dead-time control.

Use Value: 12.4 mΩ R_DS(on) and 105 ns t_rr reduce conduction and recovery losses, improving efficiency by ≥0.5% over legacy 20 mΩ devices.

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side high-frequency switching transistor in hard-switched forward or active-clamp flyback topology.

Use Value: 154 mJ E_AS and 175 °C T_j enable reliable operation under repetitive load dump and surge conditions.

Industrial Motor Drives

LED Driver Power Stages

Use Scenario: Half-bridge inverter stage for 3 kW BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 10–20 kHz PWM-driven inverter leg.

Use Value: Robust dv/dt immunity (6 kV/µs) prevents false turn-on during high dV/dt commutation events.

Use Scenario: Constant-current buck controller for high-bay LED luminaires (100–200 W).

IC Role / Device Role / Timing Role: Main switching transistor regulating LED string current at 100–500 kHz.

Use Value: Low Q_g (49–65 nC) enables use of cost-effective integrated gate drivers without external boost circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1205PBF	R_DS(on) = 12.5 mΩ @ 10 V, but higher Q_g (71 nC) and lower T_j max (175 °C same); no JEDEC qualification	Limited to commercial-grade applications; less suited for long-life industrial deployments	Prefer IPD12CN10NGATMA1 where JEDEC reliability and lower switching loss are required
STP110N10F7	R_DS(on) = 10.5 mΩ @ 10 V, but higher C_oss (720 pF vs. 489–650 pF); same TO-220 footprint only	Better conduction loss but higher switching loss at >300 kHz; not available in DPAK	Select IPD12CN10NGATMA1 for DPAK-compatible designs prioritizing balanced FOM and thermal performance

Compared with IRF1205PBF and STP110N10F7, IPD12CN10NGATMA1 delivers superior gate charge × R_DS(on) FOM, JEDEC qualification for industrial use, and DPAK packaging optimized for automated assembly and thermal relief-making it the preferred choice for high-reliability, high-frequency power conversion.

Availability

IPD12CN10NGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term lifecycle support.

Supply support for IPD12CN10NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and sensor solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™2 power transistor product line, engineered specifically for high-efficiency, high-frequency switching in industrial and communications power supplies where thermal robustness and avalanche capability are critical.

FAQ

What is the maximum continuous drain current for IPD12CN10NGATMA1 at 100 °C case temperature?

The maximum continuous drain current is 48 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TO252-3 package with standard PCB mounting; actual current capability depends on heatsinking and ambient conditions.

Does IPD12CN10NGATMA1 have a qualified body diode for synchronous rectification?

Yes-the integrated body diode is characterized with t_rr = 105 ns and Q_rr = 255 nC at T_j = 25 °C, and is JEDEC-qualified for repetitive operation in synchronous rectifier configurations without external diode supplementation.

Is the PG-TO252-3 package lead-free and RoHS compliant?

Yes-IPD12CN10NGATMA1 uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU and halogen-free requirements per IEC61249-2-21, confirmed in the product summary and maximum ratings section of the official datasheet.

What is the typical gate threshold voltage range, and how does it affect drive compatibility?

The gate threshold voltage ranges from 2.0 V (min) to 4.0 V (max) at T_j = 25 °C. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers, while maintaining noise immunity due to sufficient margin above typical CMOS output high levels.

IPD12CN10NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12.4mOhm @ 67A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4320 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD12CN10NGATMA1 FAQ

1.How can I place an order for IPD12CN10NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD12CN10NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD12CN10NGATMA1 reliable?

The price and inventory of IPD12CN10NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD12CN10NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPD12CN10NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD12CN10NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD12CN10NGATMA1?

IPD12CN10NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD12CN10NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD12CN10NGATMA1?

For technical support, including IPD12CN10NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD12CN10NGATMA1 requirements.

6.How does Aetrix verify that IPD12CN10NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD12CN10NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD12CN10NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPD12CN10NGATMA1?

All IPD12CN10NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD12CN10NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD12CN10NGATMA1 part is unused and in its original packaging.

Return procedure for IPD12CN10NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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