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Infineon Technologies IPD12CNE8N G
- Part No.:
- IPD12CNE8N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD12CNE8N G.pdf
- Description:
- MOSFET N-CH 85V 67A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,576
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Product details
Overview
IPD12CNE8N G from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO252-3 (DPAK) package, rated for 85 V VDS, 67 A continuous drain current at TC = 25 °C, and 12.4 mΩ max RDS(on) at VGS = 10 V. It features 175 °C maximum junction temperature, optimized gate charge × RDS(on) figure-of-merit (FOM), and is qualified per JEDEC standards for industrial power conversion.
For engineers reviewing the IPD12CNE8N G datasheet, IPD12CNE8N G pinout, IPD12CNE8N G application, or IPD12CNE8N G equivalent, this device is selected for high-frequency synchronous rectification, DC-DC converters, and motor control stages where low conduction loss, fast switching, and thermal robustness are critical.
Technical Context
This MOSFET employs a trench-based OptiMOS®2 process enabling low RDS(on) with controlled gate charge (Qg = 48–64 nC) and fast dynamic performance (tr = 21–31 ns, tf = 8–12 ns). Its reverse diode supports 67 A continuous forward current with VSD = 1.0–1.2 V at 67 A and Tj = 25 °C.
The device operates up to 175 °C junction temperature and exhibits stable threshold voltage (VGS(th) = 2–4 V) across temperature. Thermal resistance RthJC is 1.2 K/W, and RthJA is 40 K/W on 6 cm² copper area - confirming suitability for compact, thermally constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 85 V - supports 48 V and 60 V bus systems with margin against transients |
| RDS(on) max | 12.4 mΩ @ VGS = 10 V, ID = 67 A - enables <1 W conduction loss at 40 A |
| ID cont. (TC = 25 °C) | 67 A - delivers high current density in TO252 footprint without derating |
| Qg total | 48–64 nC - balances switching speed and gate drive power in 100–500 kHz designs |
| EAS | 154 mJ @ ID = 67 A - withstands single-pulse avalanche stress in hard-switched topologies |
| Tj max | 175 °C - allows operation in sealed enclosures or high ambient environments |
| Ciss | 3260–4340 pF - defines input capacitance affecting gate driver sizing and turn-on delay |
Pinout & Package
IPD12CNE8N G uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; RG = 1.5 Ω internal |
| Pin 2 (D) | Drain | Main power output terminal; electrically connected to exposed copper tab for heatsinking |
| Pin 3 (S) | Source | Reference node for gate drive; common return path for load current and body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| Optimized FOM (Qg × RDS(on)) | Enables >95% efficiency in 300–500 kHz synchronous buck converters at 25–48 V input |
| 175 °C rated junction temperature | Eliminates need for external thermal derating in fanless industrial SMPS designs |
| Low Qgd/Qgs ratio (≈0.6) | Reduces Miller-induced shoot-through risk during hard commutation in half-bridge configurations |
| Fast reverse recovery (trr = 103 ns, Qrr = 255 nC) | Lowers switching losses and EMI in synchronous rectifier applications vs. standard FRDs |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, operating at 300–600 kHz with precise dead-time control. Use Value: 12.4 mΩ RDS(on) minimizes conduction loss; 175 °C rating ensures reliability under sustained 150 °C board temperatures. |
Use Scenario: Isolated 24 V input to 5/12 V output DC-DC module for PLC I/O modules and HMI controllers. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC resonant topology. Use Value: Low Coss (608–809 pF) and fast tf (8–12 ns) reduce switching loss and improve light-load efficiency. |
| Automotive Body Control Module | Brushless DC Motor Driver |
Use Scenario: 12 V battery-fed power distribution unit managing headlight, wiper, and HVAC loads. IC Role / Device Role / Timing Role: High-side load switch with integrated protection, driven by microcontroller GPIO via level-shifting circuit. Use Value: 85 V VDS rating accommodates load-dump transients (ISO 7637-2 Pulse 5a); 175 °C Tj supports under-hood placement. |
Use Scenario: 3-phase inverter driving 200–500 W BLDC motors in cordless power tools and HVAC blowers. IC Role / Device Role / Timing Role: Low-side switch in 60–100 kHz PWM-driven inverter stage with discrete gate drivers. Use Value: Fast tr/tf and low Qsw (21–30 nC) enable clean edge transitions and reduced EMI filtering burden. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB12CNE8N G | PG-TO263-3 package; RDS(on) max = 12.9 mΩ; higher thermal mass than TO252 | Better heat dissipation in forced-air cooled systems; larger footprint limits high-density layouts | Select when board-level airflow is available and thermal margin >20 K is required |
| IPP12CNE8N G | PG-TO220-3 package; RDS(on) max = 12.9 mΩ; through-hole mounting | Compatible with legacy wave-solder processes; lower thermal resistance to heatsink but no PCB copper area dependency | Prefer for prototyping, repair, or mixed-technology assemblies requiring mechanical robustness |
Compared with IPB12CNE8N G and IPP12CNE8N G, IPD12CNE8N G offers the smallest footprint and lowest RthJA on minimal PCB copper, making it optimal for space-constrained, surface-mount-only production of high-efficiency power stages.
Availability
IPD12CNE8N G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IPD12CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
This device belongs to the OptiMOS®2 family - engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low RDS(on) and fast switching are essential.
FAQ
Is IPD12CNE8N G suitable for synchronous rectification in LLC resonant converters?
Yes. With 12.4 mΩ RDS(on), 103 ns reverse recovery time, and 255 nC Qrr, IPD12CNE8N G reduces conduction and switching losses in secondary-side rectification. Its 175 °C rating supports operation under peak LLC burst-mode conditions without thermal throttling.
What is the recommended gate resistor value for hard-switched 200 kHz operation?
A 10 Ω series gate resistor is recommended to limit peak gate current while maintaining tr/tf within 25–35 ns. This value balances EMI suppression and switching loss, verified with VGS = 12 V drive and 1.5 Ω internal RG per datasheet Figure 16.
Does IPD12CNE8N G require external gate clamping for 12 V logic-level drive?
No. The device's ±20 V VGS rating and 5.5 V gate plateau voltage ensure safe operation with standard 12 V gate drivers. No external Zener clamp is needed unless system-level overshoot exceeds 15 V during layout parasitic ringing.
How does its thermal performance compare between TO252 and TO220 packages?
IPD12CNE8N G (TO252) achieves RthJA = 40 K/W on 6 cm² copper, while IPP12CNE8N G (TO220) reaches 50 K/W under identical conditions. The TO252's lower RthJA and smaller footprint make it superior for thermally dense, surface-mount-only designs.
IPD12CNE8N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 85 V
- Current - Continuous Drain (Id) @ 25°C:
- 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 12.4mOhm @ 67A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4340 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD12CNE8N G FAQ
1.How can I place an order for IPD12CNE8N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD12CNE8N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD12CNE8N G reliable?
The price and inventory of IPD12CNE8N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD12CNE8N G is usually 5 days.
3.What payment methods are accepted for IPD12CNE8N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD12CNE8N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD12CNE8N G?
IPD12CNE8N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD12CNE8N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD12CNE8N G?
For technical support, including IPD12CNE8N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD12CNE8N G requirements.
6.How does Aetrix verify that IPD12CNE8N G is sourced from the original manufacturer or authorized distributors?
All IPD12CNE8N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD12CNE8N G meets industry standards.
7.What is the process for return or replacement of IPD12CNE8N G?
All IPD12CNE8N G units undergo pre-shipment inspection (PSI). If there is an issue with IPD12CNE8N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD12CNE8N G part is unused and in its original packaging.
Return procedure for IPD12CNE8N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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