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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD12N03LB G

Name: IPD12N03LB G
Brand: Infineon Technologies
SKU: IPD12N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD12N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD12N03LB G.pdf

Description:: MOSFET N-CH 30V 30A TO252-3

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Product details

Overview

IPD12N03LB G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 11.6 mΩ R_DS(on) max at V_GS = 10 V, I_D = 30 A. It operates up to 175 °C junction temperature and features low gate charge (Q_g = 8–11 nC) and excellent FOM (gate charge × R_DS(on)), suited for high-efficiency DC-DC synchronous rectification.

For engineers reviewing the IPD12N03LB G datasheet, IPD12N03LB G pinout, IPD12N03LB G application, or IPD12N03LB G equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), thermal resistance R_thJC = 2.9 K/W, avalanche energy E_AS = 64 mJ, and SMD-compatible TO252 footprint for compact power stage layouts.

Technical Context

This MOSFET uses trench-based OptiMOS®2 technology optimized for low conduction and switching losses in high-frequency synchronous buck converters. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting, and its low C_iss (1000–1300 pF) and Q_gd (2.1–3 nC) support fast, clean switching with minimal Miller-induced shoot-through risk.

The device integrates a robust body diode with low V_SD (0.93–1.2 V at I_F = 30 A, T_j = 25 °C) and low Q_rr (≤10 nC), enabling efficient reverse recovery in hard-switched topologies. Thermal design is supported by validated R_thJC = 2.9 K/W and R_thJA = 50 K/W (6 cm² copper area), confirming suitability for thermally constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal input systems with margin
R_DS(on) max	11.6 mΩ at V_GS = 10 V, I_D = 30 A - Enables ≤0.9 W conduction loss at full load
I_D continuous	30 A at T_C = 25 °C - Supports high-current output stages without forced air cooling
Q_g	8–11 nC - Reduces gate driver power demand and switching transition time
E_AS	64 mJ - Withstands single-pulse inductive energy in motor drive or converter fault conditions
R_thJC	2.9 K/W - Allows accurate junction temperature estimation from case temperature measurement
V_GS(th)	1.2–2.0 V - Ensures reliable turn-on with standard logic-level PWM controllers

Pinout & Package

IPD12N03LB G is housed in PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package conforms to JEDEC MO-247 and supports reflow soldering per J-STD-20.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to power ground or low-side switch node
Pin 2 (Gate)	Control electrode	Accepts logic-level voltage (≥4.5 V) to fully enhance channel; requires low-impedance drive due to Q_g = 8–11 nC
Pin 3 (Drain)	High-side current path terminal	Exposed copper pad on bottom surface - must be soldered to large PCB copper area for thermal dissipation

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V microcontrollers and PWM ICs
Low R_DS(on) × Q_g figure-of-merit	Optimized for high-frequency synchronous rectification with minimal total power loss
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient industrial environments without derating
Robust body diode	V_SD ≤ 1.2 V and Q_rr ≤ 10 nC reduce reverse recovery losses in non-resonant topologies
Pb-free and RoHS compliant	Meets EU Directive 2011/65/EU; lead plating replaced with matte tin for solderability and reliability

Applications

Motor Drive H-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: Half-bridge leg in 24 V brushed DC motor control with PWM frequency ≥100 kHz.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during freewheeling and braking phases.

Use Value: Low R_DS(on) minimizes I²R heating during high-current stall conditions; logic-level gate ensures fast turn-on with MCU GPIO.

Use Scenario: High-efficiency 24 V-to-5 V step-down converter for industrial IoT sensor nodes.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss at light-to-full load.

Use Value: Q_g ≤ 11 nC and low C_oss enable >95% efficiency at 500 kHz switching with minimal gate drive overhead.

Automotive Body Control Module

LED Driver Power Switch

Use Scenario: Load switch for 12 V/24 V automotive lighting or solenoid actuation with reverse battery protection.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled via CAN/LIN interface MCU outputs.

Use Value: 175 °C rating and AEC-Q101 qualification readiness support under-hood deployment; low V_GS(th) avoids need for external gate driver.

Use Scenario: Constant-current LED string switch in architectural lighting with PWM dimming up to 20 kHz.

IC Role / Device Role / Timing Role: Fast-switching power stage modulating LED current with minimal EMI generation.

Use Value: Low Q_gd (2.1–3 nC) and fast t_r/t_f (5–7 ns / 2.6–4 ns) suppress ringing and improve dimming linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44N	R_DS(on) = 25 mΩ @ V_GS = 5 V; higher conduction loss; TO-220 package	Larger footprint and higher thermal resistance (R_thJC ≈ 3.0 K/W but no exposed pad)	Prefer IPD12N03LB G where board space, thermal performance, or efficiency at 30 A is critical
STP16NF06L	V_DS = 60 V; R_DS(on) = 55 mΩ @ V_GS = 5 V; higher voltage rating but lower current capability	Better for 48 V systems but unsuitable for high-current 24 V designs due to higher R_DS(on)	Select IPD12N03LB G when optimizing for 24–30 V systems requiring <12 mΩ R_DS(on) and SMD assembly

Compared with IRLZ44N and STP16NF06L, IPD12N03LB G delivers superior power density and thermal performance in 24 V synchronous rectification, combining lower R_DS(on), smaller TO252 footprint, and tighter V_GS(th) distribution for predictable logic-level turn-on.

Availability

IPD12N03LB G is available at Aetrix Electronics and suitable for motor drive H-bridges, DC-DC synchronous buck converters, automotive body control modules, and LED driver power switches requiring stable component supply and long-term industrial availability.

Supply support for IPD12N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS®2 power transistor product line, engineered specifically for high-efficiency, high-frequency switching in 12–30 V power conversion and motor control applications where low gate charge and logic-level drive are essential.

FAQ

Is IPD12N03LB G suitable for synchronous rectification in a 500 kHz buck converter?

Yes. With Q_g = 8–11 nC, C_iss = 1000–1300 pF, and t_r/t_f = 5–7 ns / 2.6–4 ns, it supports clean, low-loss switching at 500 kHz. Its 11.6 mΩ R_DS(on) at 10 V gate drive ensures minimal conduction loss even at 30 A output current, making it well-suited for high-efficiency synchronous rectification.

What is the recommended PCB layout for thermal performance?

Mount the device on a 40 mm × 40 mm FR4 PCB with ≥6 cm² of 70 µm-thick copper connected to the exposed drain pad. Use multiple thermal vias (≥8 × 0.3 mm) beneath the pad to inner-layer ground planes. Maintain ≥1.5 mm clearance from adjacent components to avoid localized hot spots and ensure R_thJA ≤ 50 K/W in still air.

Does IPD12N03LB G have avalanche ruggedness for inductive load switching?

Yes. It is rated for E_AS = 64 mJ (I_D = 30 A, R_GS = 25 Ω) and supports repetitive unclamped inductive switching within SOA limits. This ruggedness enables use in relay drivers, solenoid controls, and motor phase legs without external snubbers in many cases.

Can IPD12N03LB G be driven directly from a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) = 1.2–2.0 V and guaranteed turn-on at V_GS ≥ 4.5 V, a 3.3 V GPIO cannot fully enhance the channel (R_DS(on) would be significantly higher), but a 5 V logic-level signal - common in MCU peripheral drivers or dedicated gate drivers - ensures full enhancement and specified R_DS(on).

IPD12N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD12N03LB G FAQ

1.How can I place an order for IPD12N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD12N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD12N03LB G reliable?

The price and inventory of IPD12N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD12N03LB G is usually 5 days.

3.What payment methods are accepted for IPD12N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD12N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD12N03LB G?

IPD12N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD12N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD12N03LB G?

For technical support, including IPD12N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD12N03LB G requirements.

6.How does Aetrix verify that IPD12N03LB G is sourced from the original manufacturer or authorized distributors?

All IPD12N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD12N03LB G meets industry standards.

7.What is the process for return or replacement of IPD12N03LB G?

All IPD12N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPD12N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD12N03LB G part is unused and in its original packaging.

Return procedure for IPD12N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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