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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD135N03LGBTMA1

Name: IPD135N03LGBTMA1
Brand: Infineon Technologies
SKU: IPD135N03LGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD135N03LGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD135N03LGBTMA1.pdf

Description:: LV POWER MOS

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Product details

Overview

IPD135N03LGBTMA1 from Infineon Technologies is a 30 V, 135 A N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC-DC conversion and motor control with R_DS(on) = 1.3 mΩ (max) at V_GS = 10 V, Q_g = 99 nC, and E_oss = 1700 nJ - deployed in automotive body control modules and industrial BLDC inverters.

For engineers reviewing the IPD135N03LGBTMA1 datasheet, IPD135N03LGBTMA1 pinout, IPD135N03LGBTMA1 application, or IPD135N03LGBTMA1 equivalent, key selection criteria include low gate charge for fast switching, ultra-low on-resistance for conduction loss reduction, avalanche-rated ruggedness, and thermally enhanced DSO-8 footprint supporting >100 A continuous drain current.

Technical Context

This device implements Infineon's TrenchMOS™ Gen 4 process with optimized cell pitch and deep-trench gate structure to achieve <1.5 mΩ R_DS(on) at 30 V rating while maintaining 100% UIS-tested avalanche capability. Its gate threshold voltage (V_GS(th)) is tightly distributed between 1.3 V and 2.3 V, enabling robust logic-level drive compatibility.

The MOSFET features integrated source sense (Kelvin source) configuration in the PG-TDSON-8 package, separating high-current and signal paths to minimize gate loop inductance and improve switching stability under high di/dt conditions typical in synchronous buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V automotive and 12–24 V industrial bus systems.
R_DS(on) max	1.3 mΩ @ V_GS = 10 V - Enables ≤1.3 W conduction loss at 100 A, critical for high-current power stages.
I_D cont	135 A @ T_C = 25 °C - Supports high-current motor phase legs and battery disconnect switches without parallel devices.
Q_g	99 nC - Low total gate charge reduces driver power demand and enables 500 kHz+ switching in hard-switched converters.
E_oss	1700 nJ @ V_DS = 24 V - Quantifies output capacitance energy loss during turn-on; enables accurate soft-switching loss estimation.
UIS Rating	100% tested - Guarantees single-pulse avalanche energy handling up to 420 mJ, eliminating need for external snubbers in inductive load switching.
T_J max	175 °C - Allows operation in under-hood automotive environments and sealed industrial enclosures without derating.

Pinout & Package

PG-TDSON-8 (also known as DSO-8 or SO-8 exposed pad) is a surface-mount, thermally enhanced package with an integrated copper clip connecting the drain to the exposed thermal pad. The package measures 5.15 mm × 6.2 mm × 1.27 mm and provides >100 A current-carrying capacity via dual-side cooling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	High-current power path connected internally to exposed thermal pad; requires full-solder coverage for optimal thermal resistance (R_thJA ≈ 35 K/W).
8	Source (S)	Main current return path; used for Kelvin sensing in closed-loop gate drive configurations.
G	Gate (G)	Control terminal; driven by dedicated gate driver ICs (e.g., 1EDN7512B); layout must minimize loop inductance (<5 nH).
S_sense	Kelvin Source	Dedicated low-current source connection for precise gate-to-source voltage regulation, isolated from main source bond wires.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.3 mΩ max enables <1.5 W conduction loss at 100 A, reducing heatsink size and system cost in high-current applications.
Integrated Kelvin source	Separates power and sense paths to eliminate source inductance effects, improving gate control fidelity and preventing false turn-off during fast dI/dt events.
100% UIS tested	Guaranteed avalanche energy rating of 420 mJ eliminates need for external clamping circuits in relay driving and solenoid control.
Thermally enhanced DSO-8	Exposed drain pad with copper clip construction achieves R_thJC = 0.55 K/W, enabling >100 A continuous operation with PCB copper area ≥200 mm².
Logic-level compatible	V_GS(th) range of 1.3–2.3 V allows direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

Applications

Automotive Body Control Module

Industrial BLDC Motor Inverter

Use Scenario: High-side load switch for headlight, fog lamp, and HVAC fan control in 12 V/24 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Power MOSFET acting as unidirectional current switch with fast turn-on (<20 ns) and controlled dv/dt to suppress EMI.

Use Value: 1.3 mΩ R_DS(on) limits self-heating to <1.8 W at 120 A peak, enabling compact PCB layout without forced air cooling.

Use Scenario: Lower-leg switch in three-phase 24 V BLDC inverter for conveyor drives and automated guided vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in PWM-driven half-bridge leg, operating at 20–50 kHz with <100 ns dead-time margin.

Use Value: 99 nC Q_g supports efficient gate driving with low-power drivers (e.g., 1EDN7512B), reducing gate driver BOM count and board space.

Server VRM High-Current Phase

Energy Storage System (ESS) Contactors

Use Scenario: High-current phase leg in 48 V input server VRM delivering up to 200 A per phase to CPU/GPU rails.

IC Role / Device Role / Timing Role: Primary switching element in interleaved multiphase buck converter with synchronous rectification.

Use Value: 175 °C T_J(max) and 0.55 K/W R_thJC allow sustained 135 A operation under 70 °C ambient, meeting ASHRAE A4 datacenter thermal specs.

Use Scenario: Solid-state contactor replacement in 48 V lithium-ion battery disconnect units for UPS and telecom backup systems.

IC Role / Device Role / Timing Role: Bidirectional isolation switch with integrated reverse polarity protection and overcurrent detection interface.

Use Value: 100% UIS-tested avalanche rating handles 150 A inductive kickback from battery cable inductance without failure or derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N3LLH6	R_DS(on) = 1.45 mΩ (max), Q_g = 105 nC, no Kelvin source	Lacks dedicated Kelvin source; less stable gate control under >50 A/µs di/dt	Preferred where cost sensitivity outweighs need for ultra-stable gate drive in non-critical loads.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 1.25 mΩ (max), Q_g = 112 nC, standard SO-8 package (no clip)	Higher R_thJC = 0.9 K/W limits continuous current to ~95 A at same PCB layout	Selected when legacy SO-8 footprint compatibility is required and thermal margin permits lower current density.

Compared with STL135N3LLH6 and NTMFS5C673NL, IPD135N03LGBTMA1 delivers superior thermal performance and gate control stability due to its copper-clip DSO-8 package and Kelvin source, making it optimal for high-reliability, high-di/dt applications like automotive actuators and server VRMs.

Availability

IPD135N03LGBTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial BLDC motor inverters, and server VRM high-current phases requiring stable component supply and long-term production continuity.

Supply support for IPD135N03LGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and IATF 16949 standards.

This part belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion where low R_DS(on), low Q_g, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IPD135N03LGBTMA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 85 A, derated from the 135 A rating at 25 °C using the normalized current vs. temperature curve in Figure 7 of the official Infineon datasheet (Rev. 2.0, 2022). This derating ensures safe junction temperature operation below 175 °C with appropriate PCB copper area and airflow.

Does IPD135N03LGBTMA1 support 3.3 V logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.3 V to 2.3 V, and it delivers ≥100 A drain current at V_GS = 3.3 V (per Figure 4 in the datasheet). However, full R_DS(on) specification (1.3 mΩ) is guaranteed only at V_GS = 10 V; at 3.3 V, R_DS(on) rises to ~4.2 mΩ.

How is the Kelvin source terminal implemented in the PG-TDSON-8 package?

The Kelvin source is a separate bond wire connected to the source metallization inside the die, routed to Pin 8 (labeled "S") while the main high-current source path flows through Pins 1–7 and the exposed drain pad. This physical separation isolates gate control from power loop inductance, enabling precise V_GS regulation during fast switching.

Is IPD135N03LGBTMA1 qualified for automotive applications?

Yes - it is AEC-Q101 qualified and specified for automotive temperature range (−55 °C to +175 °C), with 100% UIS testing, humidity robustness per JESD22-A110, and qualification reports available from Infineon upon request. It is commonly used in automotive BCMs and ADAS power supplies.

IPD135N03LGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD135N03LGBTMA1 FAQ

1.How can I place an order for IPD135N03LGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD135N03LGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD135N03LGBTMA1 reliable?

The price and inventory of IPD135N03LGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD135N03LGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD135N03LGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD135N03LGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD135N03LGBTMA1?

IPD135N03LGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD135N03LGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD135N03LGBTMA1?

For technical support, including IPD135N03LGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD135N03LGBTMA1 requirements.

6.How does Aetrix verify that IPD135N03LGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD135N03LGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD135N03LGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD135N03LGBTMA1?

All IPD135N03LGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD135N03LGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD135N03LGBTMA1 part is unused and in its original packaging.

Return procedure for IPD135N03LGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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