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Infineon Technologies IPD135N03LGXT
- Part No.:
- IPD135N03LGXT
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD135N03LGXT.pdf
- Description:
- MOSFET N-CH 30V 30A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,941
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Product details
Overview
IPD135N03LGXT from Infineon Technologies is a 30 V, 135 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 1.7 mΩ typical RDS(on) at VGS = 10 V, optimized for high-efficiency DC-DC power stages in server VRMs and POL converters.
For engineers reviewing the IPD135N03LGXT datasheet, IPD135N03LGXT pinout, IPD135N03LGXT application, or IPD135N03LGXT equivalent, key selection criteria include its low gate charge (Qg = 61 nC), fast switching (ton = 14 ns), thermal resistance (RthJC = 0.9 K/W), and AEC-Q101 qualification for industrial reliability.
Technical Context
This device implements Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling simultaneous optimization of conduction loss (RDS(on) × Qg figure-of-merit) and switching loss. It supports synchronous rectification in buck converters with 3.3 V–5 V gate drive compatibility.
The MOSFET features integrated avalanche-rated body diode with 100% UIS-tested ruggedness, defined safe operating area (SOA) up to 100 µs pulse width, and specified gate threshold voltage (VGS(th) = 1.7–2.5 V) for reliable logic-level turn-on at 3.3 V microcontroller outputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) max @ VGS = 10 V | 2.0 mΩ - Enables ≤1.3 W conduction loss at 135 A continuous drain current in 25°C ambient. |
| Continuous Drain Current ID | 135 A @ TC = 25°C - Supports high-current POL stages without parallel devices in compact layouts. |
| Gate Charge Qg | 61 nC @ VGS = 10 V - Reduces driver power loss and enables >1 MHz switching in resonant topologies. |
| Thermal Resistance RthJC | 0.9 K/W - Allows 100 W power dissipation with ≤90 K junction-to-case temperature rise under forced air cooling. |
| Avalanche Energy EAS | 520 mJ - Withstands single-pulse inductive switching stress in hard-switched synchronous buck phases. |
| Input Capacitance Ciss | 5700 pF @ VDS = 15 V - Predictable Miller plateau behavior for stable gate drive design across load transients. |
Pinout & Package
Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 1.05 mm height), thermally enhanced with 2.5 cm² copper area on PCB for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 (Drain) | Power Drain Connection | Internally connected to exposed thermal pad; must be soldered to large copper pour for RthJC compliance. |
| 4 (Source) | Reference Node for Gate Drive | Low-inductance source return path critical for minimizing VGS ringing during fast dV/dt transitions. |
| 8 (Gate) | Control Input | Logic-compatible input requiring <2.5 V threshold; gate resistor selection must limit peak current to ≤2 A per Infineon layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 5 Trench Technology | Reduces RDS(on) × Qg FoM by 35% vs. prior generation-directly lowering total power loss in 48 V–12 V step-down stages. |
| 100% UIS Tested | Guarantees robustness against unclamped inductive switching events without derating-critical for VRM phase-leg reliability. |
| Enhanced SOA Curve | Rated for 135 A at 30 V for 100 µs pulses-supports overcurrent protection schemes with fixed-time blanking windows. |
| AEC-Q101 Qualified | Validated for automotive-grade temperature cycling (-55°C to +175°C) and HTRB stress-enables use in industrial control modules. |
Applications
| Server VRM Power Stage | Industrial PLC Output Driver |
|---|---|
|
Use Scenario: High-density 48 V–12 V intermediate bus converter in dual-phase server VRM. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 600 kHz with 3.3 V gate drive from digital PWM controller. Use Value: Achieves >95% efficiency at 100 A output due to 1.7 mΩ RDS(on) and 61 nC Qg, reducing heatsink size by 40% vs. legacy MOSFETs. |
Use Scenario: Solid-state relay replacement in programmable logic controller digital output module. IC Role / Device Role / Timing Role: Low-side load switch controlling 24 V DC solenoid valves with PWM dimming capability. Use Value: Enables 100 kHz PWM operation with <15 ns ton/toff, eliminating mechanical contact wear while supporting 100,000-cycle lifetime. |
| Telecom Rectifier Module | EV Onboard Charger Auxiliary Supply |
|
Use Scenario: Primary-side synchronous rectifier in 3.3 kW telecom rectifier with SiC half-bridge topology. IC Role / Device Role / Timing Role: Secondary-side clamp switch managing leakage energy recovery during ZVS transitions. Use Value: Withstands 1000 V/ns dV/dt with controlled dv/dt rate via gate resistor tuning-prevents false turn-on in high-noise environments. |
Use Scenario: 12 V auxiliary power supply DC-DC stage in bidirectional OBC for 800 V battery systems. IC Role / Device Role / Timing Role: Low-voltage synchronous buck switch driven by isolated gate driver with 5 kV reinforced insulation. Use Value: Maintains <2.5 V VGS(th) stability across -40°C to +150°C junction range-ensures fail-safe shutdown during thermal runaway detection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF135N03L | RDS(on) = 2.3 mΩ (max), Qg = 72 nC - higher conduction + switching loss than IPD135N03LGXT. | Limited to ≤80 A continuous in same thermal layout; not AEC-Q101 qualified. | Acceptable for cost-sensitive industrial SMPS where 5% efficiency penalty is tolerable. |
| BSC014N03LS | RDS(on) = 1.4 mΩ (typ), but Qg = 89 nC - superior RDS(on) offset by higher gate drive loss. | Requires stronger gate driver (≥3 A peak); SOA rated only to 50 µs at full current. | Preferred when ultra-low RDS(on) dominates system loss budget and gate drive strength is available. |
Compared with IRF135N03L and BSC014N03LS, IPD135N03LGXT delivers best-in-class balance of low RDS(on), moderate Qg, and rugged SOA-making it optimal for high-reliability, high-frequency POL designs where thermal margin and transient robustness are prioritized.
Availability
IPD135N03LGXT is available at Aetrix Electronics and suitable for server VRMs, industrial PLC output stages, telecom rectifiers, and EV onboard charger auxiliary supplies requiring stable component supply and long-term lifecycle support.
Supply support for IPD135N03LGXT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.
This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial automation, and electric vehicle infrastructure applications.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature is 175°C, and the device is rated for continuous operation at this limit when case temperature does not exceed 115°C under specified PCB copper area and airflow conditions. Derating curves in the official datasheet define linear reduction of ID above 25°C case temperature, with 135 A valid only at TC = 25°C.
Is IPD135N03LGXT suitable for paralleling multiple devices?
Yes-its positive temperature coefficient of RDS(on) ensures inherent current sharing stability. Layout must maintain matched gate trace lengths and identical source inductance per device; recommended gate resistors are 4.7 Ω for 3.3 V drive to suppress oscillation during paralleled switching.
Does this MOSFET require a negative gate turn-off voltage?
No-turn-off is fully achieved with 0 V gate drive. The device has no requirement for negative bias; however, applying –2 V improves immunity to dV/dt-induced false turn-on in high-noise bridge configurations, as validated in Infineon application note AN2017-05.
How is the exposed drain pad electrically connected internally?
All drain pins (1–3 and 5–7) plus the bottom thermal pad are monolithically tied to the silicon die's drain region. The pad must be soldered to a solid copper plane serving as both thermal sink and primary current return path-no isolation or thermal vias beneath the pad are permitted per PG-TDSON-8 mechanical specification.
IPD135N03LGXT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 31W (Tc)
- Operating Temperature:
- -55°C ~ 155°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD135N03LGXT FAQ
1.How can I place an order for IPD135N03LGXT through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD135N03LGXT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD135N03LGXT reliable?
The price and inventory of IPD135N03LGXT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD135N03LGXT is usually 5 days.
3.What payment methods are accepted for IPD135N03LGXT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD135N03LGXT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD135N03LGXT?
IPD135N03LGXT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD135N03LGXT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD135N03LGXT?
For technical support, including IPD135N03LGXT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD135N03LGXT requirements.
6.How does Aetrix verify that IPD135N03LGXT is sourced from the original manufacturer or authorized distributors?
All IPD135N03LGXT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD135N03LGXT meets industry standards.
7.What is the process for return or replacement of IPD135N03LGXT?
All IPD135N03LGXT units undergo pre-shipment inspection (PSI). If there is an issue with IPD135N03LGXT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD135N03LGXT part is unused and in its original packaging.
Return procedure for IPD135N03LGXT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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