Infineon Technologies IPD135N08N3GBTMA1

Overview

IPD135N08N3GBTMA1 from Infineon Technologies is an N-channel 80 V, 45 A, 13.5 mΩ OptiMOS™ 3 power MOSFET in PG-TO-252-3 package, optimized for high-frequency DC/DC converters and featuring 19–25 nC total gate charge, 1.9 K/W junction-to-case thermal resistance, and 100% avalanche tested ruggedness. It serves as a primary synchronous rectifier or high-side switch in industrial SMPS and POL modules.

For engineers reviewing the IPD135N08N3GBTMA1 datasheet, IPD135N08N3GBTMA1 pinout, IPD135N08N3GBTMA1 application, or IPD135N08N3GBTMA1 equivalent, key selection criteria include R_DS(on) at 6 V drive (≤26 mΩ), Q_g/R_DS(on) figure-of-merit (<2.0 nC·mΩ), SOA robustness at 100 µs pulse width, and thermal performance on 6 cm² FR4 copper.

Technical Context

This device employs trench-based silicon technology with optimized cell pitch and reduced gate-drain charge (Q_gd = 4 nC) to minimize switching losses in hard-switched topologies. Its gate threshold voltage (2.0–3.5 V) ensures reliable turn-on with standard 5 V or 3.3 V logic-level drivers while maintaining noise immunity.

The integrated body diode exhibits t_rr = 50 ns and Q_rr = 74 nC at 100 A/µs di/dt, enabling efficient synchronous rectification without external Schottky assistance in 48 V input buck converters up to 1 MHz.

Key Specifications

Pinout & Package

IPD135N08N3GBTMA1 uses the PG-TO-252-3 (DPAK) thermally enhanced surface-mount package with exposed drain pad for low-inductance, high-current routing and improved PCB heat spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with STL135N8LH6AG and IRF135N8PBF, IPD135N08N3GBTMA1 delivers superior Q_g/R_DS(on) balance and guaranteed avalanche capability-critical for high-reliability 1 MHz DC/DC converters where both efficiency and fault tolerance are design requirements.

Availability

IPD135N08N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, telecom DC/DC converters, and motor drive half-bridges requiring stable component supply across multi-year production cycles.

Supply support for IPD135N08N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 3 product line-designed specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial power supplies where thermal density and switching loss are critical constraints.

FAQ

What is the maximum recommended gate resistor value for reliable 1 MHz switching?

A 1.6 Ω external gate resistor is validated in the datasheet for 45 A switching at 10 V drive and 1.6 Ω R_G,ext, yielding 35 ns rise time. Using >3.3 Ω risks exceeding safe dv/dt limits and increasing switching loss beyond thermal budget; lower values require careful layout to avoid oscillation due to 2 Ω intrinsic gate resistance.

Does this MOSFET support 5 V logic-level gate drive in practice?

Yes-its 2.0–3.5 V V_GS(th) range ensures turn-on with 5 V logic, but R_DS(on) rises to 16–26 mΩ at V_GS = 6 V. For full 13.5 mΩ performance, 10 V drive is required; 5 V operation is viable only in derated current applications (<22.5 A) where conduction loss increase is acceptable.

How does the 1.9 K/W R_thJC translate to PCB layout requirements?

With 1.9 K/W R_thJC, achieving 79 W dissipation requires ≤150 °C junction rise above case temperature. This demands ≥6 cm² of 70 µm copper on FR4 connected directly to the exposed drain pad, vertical orientation in still air, and no thermal vias obstructing the main current path-per Figure 4 in the datasheet.

Is the body diode suitable for synchronous rectification without external diode parallel?

Yes-the 50 ns t_rr and 74 nC Q_rr are characterized under 100 A/µs di/dt and enable clean commutation in synchronous buck topologies up to 1 MHz. However, in high-di/dt (>200 A/µs) or high-temperature (>125 °C) conditions, adding a Schottky may further reduce reverse recovery loss.