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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD13N03LA G

Name: IPD13N03LA G
Brand: Infineon Technologies
SKU: IPD13N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD13N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD13N03LA G.pdf

Description:: MOSFET N-CH 25V 30A TO252-3

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Product details

Overview

IPD13N03LA G from Infineon Technologies is a logic-level N-channel MOSFET designed for high-frequency DC/DC converters, featuring 25 V V_DS, 12.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 30 A, 175 °C maximum junction temperature, and qualified per JEDEC standards for industrial power applications.

For engineers reviewing the IPD13N03LA G datasheet, IPD13N03LA G pinout, IPD13N03LA G application, or IPD13N03LA G equivalent, key selection criteria include gate charge (Q_g = 6.3–8.3 nC), thermal resistance (R_thJC = 3.2 K/W), reverse diode forward voltage (V_SD = 0.95–1.2 V), and avalanche energy rating (E_AS = 60 mJ).

Technical Context

This OptiMOS®2 device uses trench-gate technology to achieve low gate charge × R_DS(on) figure-of-merit (FOM) and superior thermal performance. Its logic-level gate drive (V_GS(th) = 1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V controllers without level-shifting.

The integrated body diode supports synchronous rectification in buck converters, with fast reverse recovery (Q_rr = 10 nC) and high dv/dt immunity (6 kV/µs). The device operates up to 175 °C junction temperature and meets RoHS requirements with Pb-free lead plating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; suitable for 12 V input bus systems with margin.
R_DS(on) max	12.8 mΩ at V_GS = 10 V, I_D = 30 A - Enables low conduction loss in high-current switching nodes.
Q_g	6.3–8.3 nC - Low total gate charge reduces driver power and switching transition time.
R_thJC	3.2 K/W - Efficient heat transfer from die to case supports high-power density PCB layouts.
E_AS	60 mJ (I_D = 24 A, R_GS = 25 Ω) - Robust single-pulse avalanche capability for inductive load switching.
V_GS(th)	1.2–2.0 V - Logic-compatible threshold ensures reliable turn-on with standard microcontroller GPIOs.
V_SD	0.95–1.2 V at I_F = 30 A, T_j = 25 °C - Low body diode forward drop improves efficiency in freewheeling operation.

Pinout & Package

IPD13N03LA G is housed in PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives logic-level voltage to modulate channel conductivity; low input capacitance (C_iss = 784–1043 pF) minimizes driver loading.
Pin 2 (Drain)	High-side current path	Connected to exposed copper tab; serves as primary thermal path and high-current output node.
Pin 3 (Source)	Reference and return path	Provides ground reference for gate drive and current sensing; ties to low-impedance source plane on PCB.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.0 V enables direct 3.3 V/5 V MCU control without external level shifters.
Low FOM (Q_g × R_DS(on))	~100 nC·mΩ - Optimized for high-frequency (>500 kHz) DC/DC converter efficiency.
175 °C rated junction temperature	Supports operation in thermally constrained enclosures and extended ambient environments.
JEDEC-qualified reliability	Complies with J-STD-20 and JESD22 for reflow and mechanical stress robustness.
Integrated robust body diode	Q_rr = 10 nC and dv/dt = 6 kV/µs enable stable synchronous rectification without snubbers.

Applications

Server VRM

Industrial SMPS

Use Scenario: Point-of-load (POL) buck converter supplying core voltage to Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: High-side synchronous FET in 500 kHz–1 MHz switching stage.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, improving VRM efficiency above 92% at full load.

Use Scenario: 24 V input, 5 V/30 A output isolated flyback or LLC secondary-side synchronous rectifier.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode.

Use Value: V_SD < 1.2 V and fast Q_rr cut conduction loss by >40% versus 40 V Schottky, raising system efficiency by 1.8%.

Automotive ADAS Power

Telecom DC/DC Module

Use Scenario: 12 V input, 3.3 V/15 A supply for radar ECU or camera module SoC.

IC Role / Device Role / Timing Role: Main switch in compact, thermally limited buck regulator.

Use Value: R_thJC = 3.2 K/W and 175 °C rating allow operation at 85 °C ambient without derating in sealed enclosures.

Use Scenario: 48 V intermediate bus converter feeding distributed 12 V rails in base station power shelf.

IC Role / Device Role / Timing Role: Primary-side switch in hard-switched forward or active-clamp forward topology.

Use Value: 60 mJ E_AS withstands leakage inductance spikes during ZVS transitions, eliminating need for clamping circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD12N03L G	R_DS(on) = 13.5 mΩ (max), Q_g = 7.2 nC - slightly higher on-resistance and gate charge.	Same package and pinout; lower current rating (28 A vs. 30 A) limits use in 30 A continuous designs.	Select when cost sensitivity outweighs marginal efficiency gain; verify thermal margin at full load.
IRLML6344TRPBF	R_DS(on) = 22 mΩ (max) at 4.5 V, SOT-23 package - higher R_DS(on), smaller thermal mass, lower current capability (4.3 A).	Not a drop-in replacement: different package, lower power handling, intended for <5 A loads.	Use only in space-constrained, low-current auxiliary rails; not suitable for main power switches.

Compared with IPD12N03L G and IRLML6344TRPBF, IPD13N03LA G delivers the lowest R_DS(on) × Q_g FOM in TO252 logic-level MOSFETs, enabling highest efficiency in 20–30 A, 500 kHz–1 MHz DC/DC stages where thermal headroom is limited.

Availability

IPD13N03LA G is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, automotive ADAS power supplies, and telecom DC/DC modules requiring stable component supply across multi-year production cycles.

Supply support for IPD13N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 logic-level MOSFET product line, engineered for high-efficiency, high-frequency switching in space- and thermally-constrained DC/DC converters.

FAQ

Is IPD13N03LA G suitable for 3.3 V gate drive?

Yes. With V_GS(th) ranging from 1.2 V to 2.0 V and R_DS(on) = 17.5–21.9 mΩ at V_GS = 4.5 V, it fully turns on using standard 3.3 V logic outputs. However, R_DS(on) increases ~65% versus 10 V drive, so thermal design must account for higher conduction loss at full current.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 30 A at both T_C = 25 °C and T_C = 100 °C. This reflects bondwire-limited current handling rather than thermal limitation; actual usable current at 100 °C case depends on PCB copper area and airflow, but the device remains rated for 30 A under those conditions.

Does IPD13N03LA G have avalanche ruggedness for inductive switching?

Yes. It is rated for 60 mJ single-pulse avalanche energy with I_D = 24 A and R_GS = 25 Ω. This allows safe operation in non-ZVS topologies like hard-switched forward or flyback converters where leakage inductance causes voltage overshoot during turn-off.

How does its body diode compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 0.95–1.2 V at 30 A and Q_rr = 10 nC, outperforming many 40 V Schottky diodes (V_F ≈ 0.55 V but with higher capacitance and no current rating match). Its fast recovery and low stored charge minimize switching loss and ringing in high-frequency synchronous rectifiers.

IPD13N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1043 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 46W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD13N03LA G FAQ

1.How can I place an order for IPD13N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD13N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD13N03LA G reliable?

The price and inventory of IPD13N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD13N03LA G is usually 5 days.

3.What payment methods are accepted for IPD13N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD13N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD13N03LA G?

IPD13N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD13N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD13N03LA G?

For technical support, including IPD13N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD13N03LA G requirements.

6.How does Aetrix verify that IPD13N03LA G is sourced from the original manufacturer or authorized distributors?

All IPD13N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD13N03LA G meets industry standards.

7.What is the process for return or replacement of IPD13N03LA G?

All IPD13N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPD13N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD13N03LA G part is unused and in its original packaging.

Return procedure for IPD13N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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