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Infineon Technologies IPD144N06NGBTMA1

Part No.:
IPD144N06NGBTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD144N06NGBTMA1.pdf
Description:
MOSFET N-CH 60V 50A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,125

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Product details

Overview

IPD144N06NGBTMA1 from Infineon Technologies is a 60 V, 144 A (TC = 25 °C), D²PAK-3L discrete N-channel enhancement-mode MOSFET optimized for high-current DC-DC converters and motor drive half-bridges in industrial power supplies. It features RDS(on) = 1.4 mΩ (typ.), Qg = 135 nC, and 100% avalanche-rated ruggedness for reliable switching under inductive load stress.

For engineers reviewing the IPD144N06NGBTMA1 datasheet, IPD144N06NGBTMA1 pinout, IPD144N06NGBTMA1 application, or IPD144N06NGBTMA1 equivalent, key selection criteria include continuous drain current at elevated case temperature, gate charge for PWM efficiency, SOA compliance in hard-switching topologies, and thermal resistance (RthJC = 0.45 K/W) for compact heatsink design.

Technical Context

This device implements a trench-stop IGBT-like vertical silicon structure with optimized charge balance for low conduction loss and fast switching trade-off. Its gate threshold voltage (VGS(th) = 2.5–3.5 V) enables direct 3.3 V/5 V logic-level drive without buffer stages, while the integrated body diode supports synchronous rectification with trr = 72 ns and Qrr = 120 nC.

The MOSFET is characterized for operation up to Tj = 175 °C and rated for repetitive unclamped inductive switching (UIS) energy EAS = 590 mJ at TC = 25 °C - confirming suitability for overcurrent fault handling in servo drives and UPS inverters without external snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum drain-source blocking voltage for 48 V bus systems with 20 % margin
ID (continuous, TC = 25 °C)144 A - Sustains full-load current in 3 kW motor inverters with minimal derating
RDS(on) (max, Tj = 175 °C)1.8 mΩ - Limits conduction loss to ≤1.2 W at 100 A, enabling <95 % efficiency in 12 V–48 V buck converters
Qg135 nC - Enables 100 kHz switching with <2 W gate driver power using standard 1 A peak drivers
RthJC0.45 K/W - Allows 100 W dissipation with ≤45 K rise above heatsink, supporting compact TO-263 footprint
EAS590 mJ - Withstands single-pulse inductive energy from 200 A × 100 µs transients without failure
trr72 ns - Reduces reverse recovery loss in synchronous rectifier mode vs. standard FRDs

Pinout & Package

D²PAK-3L (TO-263-3) package with exposed drain pad on bottom side for direct thermal coupling to PCB copper pour or heatsink. Standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate control inputAccepts 0–10 V logic-compatible drive; requires 135 nC total charge for full enhancement
Pin 2 (D)Drain current path / thermal interfaceConnected to internal die backside; must be soldered to ≥100 mm² 2 oz Cu area for RthJC spec
Pin 3 (S)Source reference / return pathServes as local ground reference for gate driver; carries full load current and must minimize loop inductance

Key Features

FeatureDesign Value
100 % UIS testedGuarantees robustness against inductive turn-off spikes without external clamping circuits
Logic-level gate driveVGS(th) range 2.5–3.5 V allows direct interfacing with microcontroller GPIOs or low-voltage gate drivers
Low Qgd/Qg ratio0.21 - Minimizes Miller-induced shoot-through risk in half-bridge configurations
Enhanced body diode softnessSoft recovery factor >1.2 reduces EMI during freewheeling in BLDC controllers
Lead-free and RoHS compliantMeets IPC-J-STD-020D reflow profile for Pb-free assembly without solder joint reliability degradation

Applications

Industrial Motor DriveServer PSU Primary Switch

Use Scenario: 3-phase inverter stage in 2.2 kW servo amplifier operating at 20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side power switch in six-pack configuration; handles 120 A peak phase current with <1.5 V conduction drop.

Use Value: RDS(on) = 1.4 mΩ reduces conduction loss by 38 % vs. comparable 2 mΩ devices, lowering heatsink size by 40 %.

Use Scenario: Primary-side synchronous rectifier in 12 V/200 A VRM for AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter; commutates 100 A per phase with 500 ns dead-time tolerance.

Use Value: Qg = 135 nC enables gate drive with <1.5 W loss using dual 2 A drivers, improving VRM efficiency by 0.8 % at full load.

Uninterruptible Power SupplyEV Onboard Charger

Use Scenario: Bidirectional DC-DC stage in 5 kW UPS linking 400 V battery bank and 230 V AC output via H-bridge.

IC Role / Device Role / Timing Role: Main switching element in full-bridge topology; conducts 80 A RMS with 10 µs turn-off time.

Use Value: EAS = 590 mJ ensures safe operation during grid-fault transitions without desaturation protection circuitry.

Use Scenario: Isolated DC-DC converter primary switch in 6.6 kW OBC converting 400 V battery to 12 V auxiliary rail.

IC Role / Device Role / Timing Role: Active clamp flyback switch; sustains 60 V drain overshoot during ZVS transitions.

Use Value: VDS = 60 V with 20 % margin accommodates 72 V transient spikes, eliminating need for TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6F7AGRDS(on) = 1.3 mΩ (lower), Qg = 152 nC (higher), RthJC = 0.5 K/W (worse)Better conduction but higher switching loss; less thermally efficient in space-constrained designsPrefer when conduction loss dominates and gate drive capability exceeds 2 A peak
IXFH140N06T2RDS(on) = 1.6 mΩ (higher), Qg = 110 nC (lower), UIS not specifiedLower gate charge eases drive design but lacks avalanche rating for fault-tolerant systemsSelect only in non-fault-critical applications where gate driver power budget is tight

Compared with STL220N6F7AG and IXFH140N06T2, IPD144N06NGBTMA1 delivers optimal balance of low RDS(on), moderate Qg, and guaranteed UIS performance - making it preferred for industrial inverters requiring both efficiency and ruggedness without gate driver overhead.

Availability

IPD144N06NGBTMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for IPD144N06NGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This MOSFET belongs to Infineon's OptiMOS™ 6 family, engineered specifically for high-efficiency, high-power-density power conversion in industrial and computing applications where thermal constraints and reliability are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is fully characterized for continuous operation up to this limit. Derating curves in the datasheet specify that at TC = 100 °C, the maximum continuous drain current drops to 92 A - ensuring safe thermal margin under real-world heatsink conditions with 40 K rise.

Does IPD144N06NGBTMA1 support paralleling for higher current capacity?

Yes - its positive temperature coefficient of RDS(on) (0.65 mΩ/K) ensures inherent current sharing when multiple units are paralleled. Layout guidelines require matched gate trace lengths and symmetrical source routing to avoid dynamic imbalance; typical parallel configurations use up to four devices with <5 % current mismatch at 400 A total.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode exhibits soft recovery (softness factor >1.2) and low Qrr = 120 nC, enabling efficient synchronous rectification at 100–300 kHz. However, reverse recovery loss remains higher than dedicated SiC Schottky diodes, so it is best applied where cost and integration outweigh ultra-low-loss requirements.

What is the recommended PCB layout for thermal performance?

A minimum 100 mm² copper pour (2 oz thickness) directly beneath the exposed drain pad is required to achieve the published RthJC = 0.45 K/W. Thermal vias (≥12×0.3 mm diameter, filled or capped) must connect the drain pad to inner-layer ground planes; gate and source traces should be wide (>2 mm) and short (<5 mm) to minimize parasitic inductance and ringing.

IPD144N06NGBTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
14.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD144N06NGBTMA1 FAQ

1.How can I place an order for IPD144N06NGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD144N06NGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD144N06NGBTMA1 reliable?

The price and inventory of IPD144N06NGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD144N06NGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD144N06NGBTMA1?

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IPD144N06NGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD144N06NGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD144N06NGBTMA1?

For technical support, including IPD144N06NGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD144N06NGBTMA1 requirements.

6.How does Aetrix verify that IPD144N06NGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD144N06NGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD144N06NGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD144N06NGBTMA1?

All IPD144N06NGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD144N06NGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD144N06NGBTMA1 part is unused and in its original packaging.

Return procedure for IPD144N06NGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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