Infineon Technologies IPD144N06NGBTMA1
- Part No.:
- IPD144N06NGBTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD144N06NGBTMA1.pdf
- Description:
- MOSFET N-CH 60V 50A TO252-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,125
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPD144N06NGBTMA1 from Infineon Technologies is a 60 V, 144 A (TC = 25 °C), D²PAK-3L discrete N-channel enhancement-mode MOSFET optimized for high-current DC-DC converters and motor drive half-bridges in industrial power supplies. It features RDS(on) = 1.4 mΩ (typ.), Qg = 135 nC, and 100% avalanche-rated ruggedness for reliable switching under inductive load stress.
For engineers reviewing the IPD144N06NGBTMA1 datasheet, IPD144N06NGBTMA1 pinout, IPD144N06NGBTMA1 application, or IPD144N06NGBTMA1 equivalent, key selection criteria include continuous drain current at elevated case temperature, gate charge for PWM efficiency, SOA compliance in hard-switching topologies, and thermal resistance (RthJC = 0.45 K/W) for compact heatsink design.
Technical Context
This device implements a trench-stop IGBT-like vertical silicon structure with optimized charge balance for low conduction loss and fast switching trade-off. Its gate threshold voltage (VGS(th) = 2.5–3.5 V) enables direct 3.3 V/5 V logic-level drive without buffer stages, while the integrated body diode supports synchronous rectification with trr = 72 ns and Qrr = 120 nC.
The MOSFET is characterized for operation up to Tj = 175 °C and rated for repetitive unclamped inductive switching (UIS) energy EAS = 590 mJ at TC = 25 °C - confirming suitability for overcurrent fault handling in servo drives and UPS inverters without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 48 V bus systems with 20 % margin |
| ID (continuous, TC = 25 °C) | 144 A - Sustains full-load current in 3 kW motor inverters with minimal derating |
| RDS(on) (max, Tj = 175 °C) | 1.8 mΩ - Limits conduction loss to ≤1.2 W at 100 A, enabling <95 % efficiency in 12 V–48 V buck converters |
| Qg | 135 nC - Enables 100 kHz switching with <2 W gate driver power using standard 1 A peak drivers |
| RthJC | 0.45 K/W - Allows 100 W dissipation with ≤45 K rise above heatsink, supporting compact TO-263 footprint |
| EAS | 590 mJ - Withstands single-pulse inductive energy from 200 A × 100 µs transients without failure |
| trr | 72 ns - Reduces reverse recovery loss in synchronous rectifier mode vs. standard FRDs |
Pinout & Package
D²PAK-3L (TO-263-3) package with exposed drain pad on bottom side for direct thermal coupling to PCB copper pour or heatsink. Standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate control input | Accepts 0–10 V logic-compatible drive; requires 135 nC total charge for full enhancement |
| Pin 2 (D) | Drain current path / thermal interface | Connected to internal die backside; must be soldered to ≥100 mm² 2 oz Cu area for RthJC spec |
| Pin 3 (S) | Source reference / return path | Serves as local ground reference for gate driver; carries full load current and must minimize loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| 100 % UIS tested | Guarantees robustness against inductive turn-off spikes without external clamping circuits |
| Logic-level gate drive | VGS(th) range 2.5–3.5 V allows direct interfacing with microcontroller GPIOs or low-voltage gate drivers |
| Low Qgd/Qg ratio | 0.21 - Minimizes Miller-induced shoot-through risk in half-bridge configurations |
| Enhanced body diode softness | Soft recovery factor >1.2 reduces EMI during freewheeling in BLDC controllers |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020D reflow profile for Pb-free assembly without solder joint reliability degradation |
Applications
| Industrial Motor Drive | Server PSU Primary Switch |
|---|---|
Use Scenario: 3-phase inverter stage in 2.2 kW servo amplifier operating at 20 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side and low-side power switch in six-pack configuration; handles 120 A peak phase current with <1.5 V conduction drop. Use Value: RDS(on) = 1.4 mΩ reduces conduction loss by 38 % vs. comparable 2 mΩ devices, lowering heatsink size by 40 %. | Use Scenario: Primary-side synchronous rectifier in 12 V/200 A VRM for AI accelerator cards. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter; commutates 100 A per phase with 500 ns dead-time tolerance. Use Value: Qg = 135 nC enables gate drive with <1.5 W loss using dual 2 A drivers, improving VRM efficiency by 0.8 % at full load. |
| Uninterruptible Power Supply | EV Onboard Charger |
Use Scenario: Bidirectional DC-DC stage in 5 kW UPS linking 400 V battery bank and 230 V AC output via H-bridge. IC Role / Device Role / Timing Role: Main switching element in full-bridge topology; conducts 80 A RMS with 10 µs turn-off time. Use Value: EAS = 590 mJ ensures safe operation during grid-fault transitions without desaturation protection circuitry. | Use Scenario: Isolated DC-DC converter primary switch in 6.6 kW OBC converting 400 V battery to 12 V auxiliary rail. IC Role / Device Role / Timing Role: Active clamp flyback switch; sustains 60 V drain overshoot during ZVS transitions. Use Value: VDS = 60 V with 20 % margin accommodates 72 V transient spikes, eliminating need for TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(on) = 1.3 mΩ (lower), Qg = 152 nC (higher), RthJC = 0.5 K/W (worse) | Better conduction but higher switching loss; less thermally efficient in space-constrained designs | Prefer when conduction loss dominates and gate drive capability exceeds 2 A peak |
| IXFH140N06T2 | RDS(on) = 1.6 mΩ (higher), Qg = 110 nC (lower), UIS not specified | Lower gate charge eases drive design but lacks avalanche rating for fault-tolerant systems | Select only in non-fault-critical applications where gate driver power budget is tight |
Compared with STL220N6F7AG and IXFH140N06T2, IPD144N06NGBTMA1 delivers optimal balance of low RDS(on), moderate Qg, and guaranteed UIS performance - making it preferred for industrial inverters requiring both efficiency and ruggedness without gate driver overhead.
Availability
IPD144N06NGBTMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.
Supply support for IPD144N06NGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This MOSFET belongs to Infineon's OptiMOS™ 6 family, engineered specifically for high-efficiency, high-power-density power conversion in industrial and computing applications where thermal constraints and reliability are critical.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature is 175 °C, and the device is fully characterized for continuous operation up to this limit. Derating curves in the datasheet specify that at TC = 100 °C, the maximum continuous drain current drops to 92 A - ensuring safe thermal margin under real-world heatsink conditions with 40 K rise.
Does IPD144N06NGBTMA1 support paralleling for higher current capacity?
Yes - its positive temperature coefficient of RDS(on) (0.65 mΩ/K) ensures inherent current sharing when multiple units are paralleled. Layout guidelines require matched gate trace lengths and symmetrical source routing to avoid dynamic imbalance; typical parallel configurations use up to four devices with <5 % current mismatch at 400 A total.
Is the body diode suitable for synchronous rectification in a buck converter?
Yes - the body diode exhibits soft recovery (softness factor >1.2) and low Qrr = 120 nC, enabling efficient synchronous rectification at 100–300 kHz. However, reverse recovery loss remains higher than dedicated SiC Schottky diodes, so it is best applied where cost and integration outweigh ultra-low-loss requirements.
What is the recommended PCB layout for thermal performance?
A minimum 100 mm² copper pour (2 oz thickness) directly beneath the exposed drain pad is required to achieve the published RthJC = 0.45 K/W. Thermal vias (≥12×0.3 mm diameter, filled or capped) must connect the drain pad to inner-layer ground planes; gate and source traces should be wide (>2 mm) and short (<5 mm) to minimize parasitic inductance and ringing.
IPD144N06NGBTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD144N06NGBTMA1 FAQ
1.How can I place an order for IPD144N06NGBTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD144N06NGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD144N06NGBTMA1 reliable?
The price and inventory of IPD144N06NGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD144N06NGBTMA1 is usually 5 days.
3.What payment methods are accepted for IPD144N06NGBTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD144N06NGBTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD144N06NGBTMA1?
IPD144N06NGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD144N06NGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD144N06NGBTMA1?
For technical support, including IPD144N06NGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD144N06NGBTMA1 requirements.
6.How does Aetrix verify that IPD144N06NGBTMA1 is sourced from the original manufacturer or authorized distributors?
All IPD144N06NGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD144N06NGBTMA1 meets industry standards.
7.What is the process for return or replacement of IPD144N06NGBTMA1?
All IPD144N06NGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD144N06NGBTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD144N06NGBTMA1 part is unused and in its original packaging.
Return procedure for IPD144N06NGBTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPD144N06NGBTMA1 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

