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Infineon Technologies IPD15N06S2L64ATMA1

Name: IPD15N06S2L64ATMA1
Brand: Infineon Technologies
SKU: IPD15N06S2L64ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD15N06S2L64ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD15N06S2L64ATMA1.pdf

Description:: MOSFET N-CH 55V 19A TO252-3

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Product details

Overview

IPD15N06S2L64ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It features a 55 V drain-source breakdown voltage, 64 mΩ maximum R_DS(on) at V_GS = 10 V / I_D = 13 A, 19 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification for under-hood use in 12 V automotive power distribution systems.

For engineers reviewing the IPD15N06S2L64ATMA1 datasheet, IPD15N06S2L64ATMA1 pinout, IPD15N06S2L64ATMA1 application, or IPD15N06S2L64ATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 175 °C operating junction temperature, ultra-low R_DS(on), 100% avalanche energy rating (43 mJ), and PG-TO252-3-11 surface-mount package with integrated freewheeling diode.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct microcontroller-level drive, and its 38 pF reverse transfer capacitance (Crss) supports efficient hard-switching in DC-DC converters and motor control half-bridges.

The integrated body diode exhibits 0.93–1.3 V forward voltage at 15 A and 25 °C, with 34 ns reverse recovery time and 32 nC Q_rr, enabling synchronous rectification replacement in high-efficiency buck regulators and battery protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V automotive systems with load dump margin
R_DS(on) max	64 mΩ @ V_GS = 10 V, I_D = 13 A - Enables <1.3 W conduction loss at 13 A
I_D cont	19 A @ T_C = 25 °C - Supports high-current solenoid and pump drivers
E_AS	43 mJ - Rated single-pulse avalanche energy for inductive turn-off robustness
Q_g	11–13 nC - Low gate charge enables efficient 100–500 kHz switching with minimal driver loss
T_j max	+175 °C - Qualified for engine bay and transmission control module environments
V_GS(th)	1.2–2.0 V - Logic-level compatible with 3.3 V/5 V MCU GPIO without level-shifting

Pinout & Package

IPD15N06S2L64ATMA1 is housed in a PG-TO252-3-11 (DPAK) thermally enhanced surface-mount package with exposed drain pad for PCB heat sinking. The package meets MSL1 reflow profile up to 260 °C and is lead-free (RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)	Control input	Logic-level driven node; requires <13 nC total charge for full enhancement
Pin 3 (Drain)	Power output	Exposed copper pad - primary thermal path to PCB; connects to load/high-side rail

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 43 mJ for reliability screening
Ultra-low R_DS(on)	64 mΩ max at 10 V drive enables >95% efficiency in 12 V/10 A loads
Integrated body diode	34 ns t_rr, 32 nC Q_rr - supports freewheeling in H-bridge motor drives without external diode
Thermal resistance R_thJC	3.2 K/W - enables 47 W power dissipation with modest heatsinking on FR4 PCB

Applications

Automotive Body Control Module

Industrial DC Motor Driver

Use Scenario: Switching 12 V power to door locks, seat actuators, and HVAC blowers in BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by 3.3 V microcontroller PWM outputs.

Use Value: 1.2–2.0 V V_GS(th) eliminates level shifters; 175 °C rating ensures operation near engine compartment electronics.

Use Scenario: Half-bridge leg in 24 V brushed DC motor controllers for factory automation.

IC Role / Device Role / Timing Role: Low-side switching element with fast 12 ns fall time and 3.8 V gate plateau for clean turn-off.

Use Value: 64 mΩ R_DS(on) reduces I²R loss during 15 A stall current; 43 mJ E_AS withstands inductive kickback.

Server PSU OR-ing Circuit

Battery Protection IC Interface

Use Scenario: OR-ing FET in redundant 12 V server power supplies to prevent backfeed and enable hot-swap.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-V_SD forward diode replacement with active control.

Use Value: 0.93 V typical V_SD at 15 A cuts conduction loss vs. Schottky; 34 ns t_rr minimizes cross-conduction risk.

Use Scenario: Charge/discharge path switch in Li-ion battery packs with integrated protection ICs.

IC Role / Device Role / Timing Role: Load switch controlled by BMS overcurrent signal; operates at ambient up to 85 °C.

Use Value: 19 A I_D rating supports 10 C discharge pulses; green RoHS package complies with battery safety standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N5LF6AG	60 V V_DS, 5.5 mΩ R_DS(on) @ 10 V, but 3.3 V logic drive not guaranteed; higher Q_g (22 nC)	Better for high-current, low-voltage (<10 V) systems; less suitable for 3.3 V MCU direct drive	Select if lower R_DS(on) outweighs gate drive compatibility needs
IRLZ44NPBF	55 V V_DS, 25 mΩ R_DS(on) @ 10 V, but only rated to 175 °C derated; no AEC-Q101 or avalanche testing	Cost-sensitive industrial controls where automotive qualification is unnecessary	Select for non-automotive designs requiring lowest possible R_DS(on) at 10 V drive

Compared with STL130N5LF6AG and IRLZ44NPBF, IPD15N06S2L64ATMA1 uniquely combines AEC-Q101 qualification, 100% avalanche screening, and guaranteed 4.5 V logic-level operation-making it the only choice for safety-critical automotive power switching where reliability under transient stress is mandatory.

Availability

IPD15N06S2L64ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drivers, server OR-ing circuits, and battery protection systems requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPD15N06S2L64ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V/24 V power distribution and industrial motor control applications.

FAQ

What is the maximum gate-source voltage for safe operation?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent oxide damage. For reliable long-term use, gate drive should be clamped to ≤15 V with a Zener or resistor-divider network, especially in noisy automotive environments where transients may exceed 12 V.

Does this MOSFET require a gate resistor for stability?

Yes-a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 38 pF) interacting with PCB trace inductance. This prevents false turn-on during fast dv/dt events and ensures clean 4 ns turn-on delay and 21 ns turn-off delay timing.

Can IPD15N06S2L64ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.6%/°C) enables inherent current sharing. However, layout symmetry (matched gate and source inductance) and individual gate resistors are required. Derate total current by 15% versus single-device rating to account for thermal coupling on shared PCB copper areas.

Is the body diode suitable for continuous freewheeling?

Yes-the integrated diode is rated for 19 A continuous forward current at T_C = 25 °C and has been characterized for 34 ns t_rr and 32 nC Q_rr. It supports sustained freewheeling in motor drives and buck converters, but thermal design must ensure junction temperature stays ≤175 °C under worst-case I_F × V_SD power dissipation.

IPD15N06S2L64ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 64mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 2V @ 14µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 354 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD15N06S2L64ATMA1 FAQ

1.How can I place an order for IPD15N06S2L64ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD15N06S2L64ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD15N06S2L64ATMA1 reliable?

The price and inventory of IPD15N06S2L64ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD15N06S2L64ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD15N06S2L64ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD15N06S2L64ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD15N06S2L64ATMA1?

IPD15N06S2L64ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD15N06S2L64ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD15N06S2L64ATMA1?

For technical support, including IPD15N06S2L64ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD15N06S2L64ATMA1 requirements.

6.How does Aetrix verify that IPD15N06S2L64ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD15N06S2L64ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD15N06S2L64ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD15N06S2L64ATMA1?

All IPD15N06S2L64ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD15N06S2L64ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD15N06S2L64ATMA1 part is unused and in its original packaging.

Return procedure for IPD15N06S2L64ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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