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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD160N04LGBTMA1

Name: IPD160N04LGBTMA1
Brand: Infineon Technologies
SKU: IPD160N04LGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD160N04LGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD160N04LGBTMA1.pdf

Description:: MOSFET N-CH 40V 30A TO252-3

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Inventory:4,739

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Product details

Overview

IPD160N04LGBTMA1 from Infineon Technologies is a 40 V, 160 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 1.7 mΩ R_DS(on) at V_GS = 10 V, optimized for high-current DC-DC power stages and motor drive half-bridges in industrial inverters and EV on-board chargers.

For engineers reviewing the IPD160N04LGBTMA1 datasheet, IPD160N04LGBTMA1 pinout, IPD160N04LGBTMA1 application, or IPD160N04LGBTMA1 equivalent, key selection criteria include its 1.7 mΩ on-resistance at 10 V gate drive, 125 nC total gate charge, 175 °C maximum junction temperature, and qualified AEC-Q101 stress testing for automotive-grade reliability.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate structure and source-connected drain-side field plate to achieve low R_DS(on) × Q_g figure-of-merit (212 mΩ·nC). It supports synchronous rectification in 48 V–60 V input buck converters and operates with gate threshold voltage of 1.7 V (min) for direct microcontroller interface without level-shifting.

The device features fully characterized avalanche energy rating (E_AS = 590 mJ), 100% UIS-tested, and exhibits <1.5 Ω gate resistance (R_g) for controlled switching transients. Its thermally enhanced TDSON-8 package delivers 1.2 K/W junction-to-case thermal resistance with standard PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) @ V_GS = 10 V	1.7 mΩ - Enables ≤1.7 W conduction loss at 100 A continuous drain current
Continuous I_D @ T_C = 25 °C	160 A - Supports high-power motor phase legs and battery disconnect switches
Total Gate Charge Q_g	125 nC - Determines gate driver power requirement and switching speed in hard-switched topologies
V_GS(th) Range	1.7 V to 2.5 V - Allows direct 3.3 V/5 V MCU GPIO control without external level shifter
E_AS (Single Pulse)	590 mJ - Guarantees robustness against inductive load turn-off stress in H-bridge configurations
Junction Temperature Range	−55 °C to +175 °C - Validated for under-hood automotive and industrial ambient conditions
Thermal Resistance R_thJC	1.2 K/W - Enables >100 W power dissipation with minimal heatsink in TDSON-8 footprint

Pinout & Package

PG-TDSON-8 (exposed drain pad, 5.15 mm × 6.25 mm body, 1.27 mm pitch) with vertical internal construction and single-layer 70 µm thick copper die attach for low-inductance drain path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (internally connected)	High-current output node; requires full PCB copper pour and thermal via array for heat extraction
8	Source	Reference node for gate drive; must be routed with low inductance to minimize shoot-through risk
G	Gate	Control input; driven by dedicated gate driver IC with ≥2 A peak sourcing/sinking capability

Key Features

Feature	Design Value
OptiMOS™ 5 Trench Technology	Reduces R_DS(on) × Q_g by 35% vs. prior generation, lowering combined conduction and switching losses
AEC-Q101 Qualified	Validated for automotive powertrain and charging systems per stress test requirements including HTGB, HTRB, and UHAST
Balanced Avalanche Energy Rating	590 mJ E_AS ensures reliable operation during unclamped inductive switching events in motor drives
Logic-Level Gate Threshold	V_GS(th) max = 2.5 V enables direct interface with 3.3 V microcontrollers without gate voltage translation
Enhanced Thermal Performance	1.2 K/W R_thJC allows 100+ W continuous power dissipation using standard 2 oz copper PCB layout

Applications

Industrial Motor Drive

Automotive On-Board Charger

Use Scenario: 3-phase inverter stage for 7.4 kW traction motor control in light commercial EVs.

IC Role / Device Role / Timing Role: High-side and low-side switch in each leg; switched at 10–20 kHz with dead-time control.

Use Value: 1.7 mΩ R_DS(on) reduces conduction loss by 22% vs. comparable 2.2 mΩ MOSFET, improving system efficiency by 0.8% at full load.

Use Scenario: Primary-side synchronous rectifier in dual-active-bridge (DAB) topology for 11 kW OBC.

IC Role / Device Role / Timing Role: Secondary-side switch operating in ZVS mode at 100–300 kHz; gate driven by isolated transformer-coupled signal.

Use Value: Low Q_g (125 nC) minimizes gate drive loss and enables fast turn-on for tight ZVS window control.

Server PSU DC-DC Stage

Industrial UPS Inverter

Use Scenario: 48 V to 12 V step-down converter delivering 200 A to CPU VRMs in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous buck high-side switch; operated with 500 ns minimum on-time and 1 MHz switching frequency.

Use Value: 175 °C T_j(max) and 1.2 K/W R_thJC allow sustained 160 A operation without derating in constrained airflow environments.

Use Scenario: Half-bridge output stage in 3 kVA online UPS inverter feeding critical medical equipment.

IC Role / Device Role / Timing Role: Output switch handling 230 VAC line-frequency and transient overloads up to 2× rated current.

Use Value: 590 mJ E_AS withstands repeated short-circuit events during grid fault recovery without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 145 nC; TO-220 package; no AEC-Q101 qualification	Higher conduction loss limits use to ≤80 A continuous; unsuitable for automotive under-hood mounting	Select when cost sensitivity outweighs thermal performance and automotive compliance requirements
STL220N4F7AG	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 132 nC; same TDSON-8 footprint; AEC-Q101 qualified	Nearly identical electrical specs but higher gate threshold (2.0–3.5 V), requiring 5 V gate drive for guaranteed enhancement	Choose for drop-in replacement where existing 5 V gate drivers are deployed and layout reuse is critical

Compared with IRFB4115PBF and STL220N4F7AG, IPD160N04LGBTMA1 offers the lowest R_DS(on) in its class, best thermal resistance, and widest V_GS(th) margin for 3.3 V logic compatibility-making it optimal for space-constrained, high-efficiency, and automotive-qualified designs.

Availability

IPD160N04LGBTMA1 is available at Aetrix Electronics and suitable for industrial motor drives, automotive on-board chargers, and server power supply DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for IPD160N04LGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 family, designed specifically for high-current, high-efficiency power conversion in automotive electrification and industrial automation systems.

FAQ

What is the maximum allowable continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 110 A, derated from the 160 A rating at 25 °C per the device's thermal resistance and SOA curve. This value assumes adequate PCB copper area and thermal vias meeting Infineon's recommended layout for TDSON-8 packages.

Does IPD160N04LGBTMA1 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing when paralleled. Designers must match gate loop inductance and use Kelvin source connections to avoid oscillation; typical practice uses ≤3 devices with individual gate resistors and symmetric layout.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to all drain terminals (pins 1–7) and must be soldered directly to a dedicated, non-grounded copper pour. It is not isolated and must be treated as a high-voltage, high-current node in layout and safety clearance calculations.

What is the recommended gate resistor value for 100 kHz switching in a half-bridge configuration?

For 100 kHz operation with a 2 A peak gate driver, a 4.7 Ω series gate resistor is recommended to limit dV/dt to ≤5 V/ns while maintaining <100 ns turn-on time. This value balances EMI suppression, switching loss, and gate driver thermal loading per Infineon's AN2015-07 application note.

IPD160N04LGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD160N04LGBTMA1 FAQ

1.How can I place an order for IPD160N04LGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD160N04LGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD160N04LGBTMA1 reliable?

The price and inventory of IPD160N04LGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD160N04LGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD160N04LGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD160N04LGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD160N04LGBTMA1?

IPD160N04LGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD160N04LGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD160N04LGBTMA1?

For technical support, including IPD160N04LGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD160N04LGBTMA1 requirements.

6.How does Aetrix verify that IPD160N04LGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD160N04LGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD160N04LGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD160N04LGBTMA1?

All IPD160N04LGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD160N04LGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD160N04LGBTMA1 part is unused and in its original packaging.

Return procedure for IPD160N04LGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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