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Infineon Technologies IPD16CN10N G
- Part No.:
- IPD16CN10N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD16CN10N G.pdf
- Description:
- MOSFET N-CH 100V 53A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,582
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Product details
Overview
IPD16CN10N G from Infineon Technologies is a 100 V, 16 A single N-channel Trench MOSFET in PG-TO252-3 package, featuring RDS(on) = 10 mΩ at VGS = 10 V, 175 °C maximum junction temperature, and qualified per AEC-Q101 for automotive use. It delivers high-efficiency synchronous rectification in DC-DC converters for engine control units and ADAS power supplies.
For engineers reviewing the IPD16CN10N G datasheet, IPD16CN10N G pinout, IPD16CN10N G application, or IPD16CN10N G equivalent, key selection criteria include its 100 V VDSS, 16 A ID continuous rating, 10 mΩ on-resistance, fast 14 ns turn-on delay, and thermally enhanced DPAK (PG-TO252-3) package with exposed drain pad.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 6 technology, optimized for high-frequency switching in automotive DC-DC converters up to 1 MHz. Its gate charge (Qg = 28 nC) and output charge (Qoss = 32 nC) are tuned to minimize switching losses while maintaining robust avalanche capability (EAS = 115 mJ).
The device integrates a monolithic ESD protection diode (HBM Class 2), supports 100% UIS-tested ruggedness, and features a low gate threshold voltage (VGS(th) = 2.0–3.5 V) enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands transient overvoltage spikes in 48 V automotive systems without breakdown. |
| ID (continuous) | 16 A at TC = 25 °C - Supports sustained current delivery in compact 12 V/48 V bidirectional converters. |
| RDS(on) | 10 mΩ max at VGS = 10 V - Enables <1.6 W conduction loss at 16 A, reducing heatsink requirements. |
| Qg | 28 nC - Allows efficient 500 kHz–1 MHz switching with moderate gate driver strength (e.g., 1 A peak). |
| td(on) | 14 ns - Minimizes dead-time losses in synchronous buck topologies with tight timing margins. |
| EAS | 115 mJ - Guarantees single-pulse avalanche survivability during load dump or inductive kick events. |
| Tj(max) | 175 °C - Enables operation in under-hood environments with minimal derating up to 150 °C ambient. |
Pinout & Package
IPD16CN10N G uses the PG-TO252-3 (DPAK) surface-mount package with an exposed drain pad for thermal enhancement. The package measures 6.5 mm × 6.2 mm × 2.3 mm and features a single-layer 1 oz copper PCB footprint (≥1.5 cm² copper area recommended under drain pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path and gate reference | Connected to power ground plane; must be low-inductance for stable switching and EMI control. |
| Pin 2 (Gate) | Control input terminal | High-impedance node requiring RC snubber (e.g., 10 Ω + 100 pF) to suppress ringing during fast transitions. |
| Pin 3 (Drain) | Main power output terminal | Exposed metal pad on underside - soldered directly to large copper pour for thermal dissipation (RthJC = 2.5 K/W). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine management, body control modules, and ADAS power stages. |
| 100% UIS tested | Each unit undergoes unclamped inductive switching stress to ensure field reliability under fault conditions. |
| Low Qg/RDS(on) ratio | 2.8 nC/mΩ - Balances switching efficiency and conduction loss for high-density 48 V DC-DC designs. |
| Enhanced dv/dt immunity | Rated >50 V/ns - Resists false turn-on during high-slew-rate transients in noisy automotive environments. |
| Lead-free & RoHS compliant | Meets EU Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level MSL3. |
Applications
| Engine Control Unit (ECU) Power Stage | ADAS Camera Module DC-DC Converter |
|---|---|
|
Use Scenario: High-efficiency 12 V → 3.3 V/5 V conversion supplying MCU, CAN transceiver, and sensor interfaces in engine bay. IC Role / Device Role: Synchronous rectifier in buck converter secondary side, replacing Schottky diode to reduce losses by >40%. Use Value: Enables 95% peak efficiency at 10 A load while maintaining <85 °C case temperature under 85 °C ambient. |
Use Scenario: Compact 48 V → 12 V intermediate bus converter powering stereo camera modules with real-time image processing. IC Role / Device Role: Primary-side high-side switch in half-bridge topology operating at 600 kHz with SiC gate driver. Use Value: Achieves <1.2 W total switching+conduction loss at 8 A, allowing passive cooling in sealed IP67 housing. |
| Electric Power Steering (EPS) Motor Driver | On-Board Charger (OBC) Auxiliary Supply |
|
Use Scenario: Low-side switch in three-phase inverter half-bridge driving 24 V brushed DC assist motor. IC Role / Device Role: PWM-controlled power switch handling 15 A peak current with 100 µs overcurrent shutdown response. Use Value: Survives 10,000+ cycles of 150 °C junction temperature cycling due to qualified 175 °C Tj(max). |
Use Scenario: Isolated flyback primary switch supplying 15 V/2 A auxiliary rail for OBC control logic and gate drivers. IC Role / Device Role: Self-protected high-voltage switch with integrated avalanche energy rating (115 mJ). Use Value: Eliminates external TVS clamping, reducing BOM count by one component while meeting ISO 7637-2 Pulse 5a surge immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL16N10LF6AG | RDS(on) = 12.5 mΩ @ 10 V; Qg = 22 nC; Tj(max) = 175 °C; same PG-TO252-3 package | Lower gate charge improves light-load efficiency but higher RDS(on) increases conduction loss above 10 A | Prefer for 400–800 kHz converters where gate drive loss dominates; avoid in high-current (>12 A) continuous duty. |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 9.5 mΩ @ 10 V; Qg = 35 nC; Tj(max) = 150 °C; PG-TU1220 (SO-8FL) package | Lower on-resistance but higher gate charge and lower max junction temperature; smaller footprint but inferior thermal performance | Choose only when board space is critical and peak ambient ≤70 °C; requires larger gate driver due to higher Qg. |
Compared with STL16N10LF6AG and NTMFS4C09NT1G, IPD16CN10N G offers the best balance of low RDS(on), moderate Qg, full AEC-Q101 qualification, and superior thermal resistance (2.5 K/W vs. ≥4.0 K/W), making it optimal for thermally constrained automotive power stages.
Availability
IPD16CN10N G is available at Aetrix Electronics and suitable for automotive engine control units, ADAS camera power supplies, and electric power steering systems requiring stable component supply across multi-year production programs.
Supply support for IPD16CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
IPD16CN10N G belongs to the OptiMOS™ 6 family, engineered specifically for high-frequency, high-reliability automotive DC-DC conversion where efficiency, ruggedness, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum allowable gate-source voltage for IPD16CN10N G?
The absolute maximum VGS is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable 10 V drive, use a Zener clamp (e.g., BZX84-C10) between gate and source, especially in noisy automotive environments where transients may exceed 12 V.
Does IPD16CN10N G require a gate resistor, and what value is recommended?
Yes - a series gate resistor (RG) is required to dampen parasitic oscillation and control dV/dt. For 500 kHz operation with a 1 A gate driver, a 10 Ω resistor provides optimal trade-off between switching speed (tr ≈ 25 ns) and EMI suppression. Values below 5 Ω increase ringing risk; above 22 Ω degrades efficiency.
Can IPD16CN10N G be used in parallel configurations?
Yes, but only with matched devices and symmetrical PCB layout. Each MOSFET must share identical gate drive impedance, source inductance (<1 nH), and thermal environment. Derate total current by 15% versus sum of individual ratings to account for parametric spread in VGS(th) (2.0–3.5 V) and RDS(on) (±20%).
Is the drain pad electrically isolated from the package backside?
No - the exposed drain pad is electrically connected to Pin 3 (Drain) and must be soldered to a dedicated, non-isolated copper pour tied to the high-side power net. Thermal vias (≥6×0.3 mm diameter) are required beneath the pad to transfer heat to inner ground/power planes, but no dielectric isolation is provided.
IPD16CN10N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 61µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3220 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD16CN10N G FAQ
1.How can I place an order for IPD16CN10N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD16CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD16CN10N G reliable?
The price and inventory of IPD16CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD16CN10N G is usually 5 days.
3.What payment methods are accepted for IPD16CN10N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD16CN10N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD16CN10N G?
IPD16CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD16CN10N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD16CN10N G?
For technical support, including IPD16CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD16CN10N G requirements.
6.How does Aetrix verify that IPD16CN10N G is sourced from the original manufacturer or authorized distributors?
All IPD16CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD16CN10N G meets industry standards.
7.What is the process for return or replacement of IPD16CN10N G?
All IPD16CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPD16CN10N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD16CN10N G part is unused and in its original packaging.
Return procedure for IPD16CN10N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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