Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD180N10N3GBTMA1

Name: IPD180N10N3GBTMA1
Brand: Infineon Technologies
SKU: IPD180N10N3GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD180N10N3GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD180N10N3GBTMA1.pdf

Description:: MOSFET N-CH 100V 43A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,931

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD180N10N3GBTMA1 from Infineon Technologies is an N-channel 100 V, 43 A (T_C = 25 °C) OptiMOS™3 power MOSFET in PG-TO252-3 (DPAK) package, featuring 14.7 mΩ typical R_DS(on) at V_GS = 10 V and optimized for high-frequency switching in DC-DC converters and synchronous rectification stages.

For engineers reviewing the IPD180N10N3GBTMA1 datasheet, IPD180N10N3GBTMA1 pinout, IPD180N10N3GBTMA1 application, or IPD180N10N3GBTMA1 equivalent, key selection criteria include its 175 °C maximum junction temperature, 19–25 nC total gate charge, 1350–1800 pF input capacitance, and suitability for thermally constrained industrial and automotive power stages requiring low conduction and switching losses.

Technical Context

This MOSFET employs a trench-based silicon process with optimized cell pitch and reduced gate-drain charge (Q_gd = 4 nC), enabling fast switching (t_r = 12 ns, t_f = 5 ns) while maintaining robust avalanche capability (E_AS = 50 mJ at I_D = 33 A). Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates a co-packaged body diode with 1.0–1.2 V forward voltage at 33 A and 55 ns reverse recovery time, supporting efficient synchronous rectification without external Schottky diodes. Thermal resistance R_thJC = 2.1 K/W enables high-power operation on minimal copper area (6 cm² FR4 PCB).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on) max	18 mΩ at V_GS = 10 V - delivers ≤2.5 W conduction loss at 33 A continuous drain current
I_D cont	43 A at T_C = 25 °C - rated for high-current output stages in server VRMs and motor drives
Q_g total	19–25 nC - enables <100 ns switching transitions with 1.6 Ω external gate resistor
E_AS	50 mJ - withstands single-pulse inductive energy without failure in hard-switched topologies
T_j max	175 °C - allows operation in under-hood automotive environments and sealed industrial enclosures
C_iss	1350–1800 pF - determines Miller effect magnitude and gate drive power requirement

Pinout & Package

IPD180N10N3GBTMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.5 mm × 6.2 mm × 2.3 mm and is RoHS-compliant with Pb-free lead plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)	Control input (G)	Receives PWM signal; requires <25 nC charge to fully enhance channel
Pin 3 (Drain)	Power output (D)	Exposed copper pad - primary thermal path to PCB; must be soldered to ≥6 cm² copper pour

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~350 mΩ·nC - balances switching speed and conduction loss for 300–1000 kHz DC-DC designs
Body diode Q_rr	92 nC - reduces reverse recovery loss in synchronous buck converters vs. discrete diode solutions
JEDEC-qualified reliability	Qualified per JESD22-A108 (temperature cycling) and J-STD-20 (reflow) - suitable for automotive-grade production
Halogen-free construction	Complies with IEC61249-2-21 - meets environmental requirements for industrial and consumer end equipment

Applications

Server VRM Power Stage

Automotive DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1 V conversion for CPU/GPU core supplies in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck converter, operating at 500–800 kHz.

Use Value: 14.7 mΩ R_DS(on) minimizes I²R loss at 40+ A per phase; 175 °C rating supports compact heatsinkless layout.

Use Scenario: 48 V → 12 V bidirectional DC-DC stage in 48 V mild hybrid electric vehicles (MHEV).

IC Role / Device Role / Timing Role: Primary switching element in dual-active-bridge topology, handling 30 A continuous current.

Use Value: 50 mJ avalanche energy ensures robustness against load dump and inductive kickback during fault conditions.

Industrial Motor Drive Inverter

Telecom Rectifier Module

Use Scenario: Half-bridge leg in 3 kW BLDC motor inverter for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side and low-side switch in 20 kHz PWM-driven inverter stage.

Use Value: 12 ns rise time and 5 ns fall time enable precise dead-time control and reduced shoot-through risk.

Use Scenario: Synchronous rectifier in 3 kW telecom rectifier (–48 V output) with >96% efficiency target.

IC Role / Device Role / Timing Role: Output-side MOSFET replacing Schottky diodes to reduce forward drop and thermal stress.

Use Value: 1.0–1.2 V V_SD at 33 A yields ~30% lower conduction loss than 45 V Schottky diodes at same current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL180N10F7AG	R_DS(on) = 17.5 mΩ (typ), Q_g = 22 nC, same PG-TO252-3 package	Slightly higher R_DS(on) increases conduction loss by ~15% at 33 A; identical thermal footprint	Preferred where ST's SuperMESH™7 process offers better short-circuit ruggedness in motor drive fault testing
IRF180N10D2	R_DS(on) = 16.5 mΩ (typ), Q_g = 28 nC, TO-252 package with different pinout (G-S-D)	Higher gate charge increases driver loss and slows switching; pinout mismatch requires PCB redesign	Only viable if legacy IR design reuse is required and gate drive strength permits 28 nC charge

Compared with STL180N10F7AG and IRF180N10D2, IPD180N10N3GBTMA1 delivers the lowest combined conduction–switching loss (FOM = 350 mΩ·nC), best thermal resistance (R_thJC = 2.1 K/W), and JEDEC qualification for automotive use cases.

Availability

IPD180N10N3GBTMA1 is available at Aetrix Electronics and suitable for server VRM power stages, automotive 48 V DC-DC converters, and industrial motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for IPD180N10N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in server, automotive, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable gate-source voltage for IPD180N10N3GBTMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially in high-dV/dt environments like half-bridge configurations.

Can IPD180N10N3GBTMA1 be used in linear mode (as a pass transistor)?

No - this MOSFET is not characterized or rated for linear (saturation) operation. Its Safe Operating Area (SOA) curve shows limited DC capability beyond 10 V V_DS, and prolonged linear-mode use causes localized thermal runaway due to positive temperature coefficient of R_DS(on). It is strictly intended for switched-mode applications with defined duty cycle and thermal management.

Is the body diode suitable for reverse recovery in high-frequency applications?

Yes - the integrated body diode has t_rr = 55 ns and Q_rr = 92 nC at I_F = 33 A, making it usable in synchronous rectification up to 1 MHz. However, for optimal EMI and efficiency, pairing with active gate control (e.g., adaptive dead-time adjustment) is recommended to minimize reverse recovery spikes and associated ringing.

Does IPD180N10N3GBTMA1 require a heatsink when mounted on a 6 cm² PCB copper area?

At 33 A continuous current and T_C = 100 °C, the junction temperature reaches ~155 °C with only 6 cm² copper (R_thJA = 50 K/W), leaving ~20 °C margin below 175 °C limit. No external heatsink is required for this condition, but forced airflow or larger copper area is needed for full 43 A rating at ambient >60 °C.

IPD180N10N3GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD180N10N3GBTMA1 FAQ

1.How can I place an order for IPD180N10N3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD180N10N3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD180N10N3GBTMA1 reliable?

The price and inventory of IPD180N10N3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD180N10N3GBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD180N10N3GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD180N10N3GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD180N10N3GBTMA1?

IPD180N10N3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD180N10N3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD180N10N3GBTMA1?

For technical support, including IPD180N10N3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD180N10N3GBTMA1 requirements.

6.How does Aetrix verify that IPD180N10N3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD180N10N3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD180N10N3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD180N10N3GBTMA1?

All IPD180N10N3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD180N10N3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD180N10N3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD180N10N3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…