Infineon Technologies IPD200N15N3GBTMA1

Overview

IPD200N15N3GBTMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO252-3 (DPAK) package, rated for 150 V V_DS, 20 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 175 °C maximum junction temperature. It delivers low gate charge × R_DS(on) figure-of-merit and supports high-frequency switching in DC-DC converters and synchronous rectifiers.

For engineers reviewing the IPD200N15N3GBTMA1 datasheet, IPD200N15N3GBTMA1 pinout, IPD200N15N3GBTMA1 application, or IPD200N15N3GBTMA1 equivalent, key selection criteria include its 20 mΩ on-resistance at 10 V gate drive, 150 W thermal capability at T_C = 25 °C, 175 °C operating limit, and suitability for high-efficiency power stages requiring robust avalanche performance and fast diode recovery.

Technical Context

This MOSFET employs Infineon's OptiMOS™3 silicon process optimized for low conduction and switching losses. Its gate threshold voltage (2–4 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while the integrated body diode features 106 ns reverse recovery time and 332 nC Q_rr for efficient synchronous rectification.

The device exhibits 1820 pF input capacitance (C_iss) and 214 pF output capacitance (C_oss) at V_DS = 0 V, with a low 5 pF reverse transfer capacitance (C_rss). Its 23–31 nC total gate charge (Q_g) and 5.7 V gate plateau voltage support precise timing control in hard-switched topologies.

Key Specifications

Pinout & Package

IPD200N15N3GBTMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IPB200N15N3G and IPP200N15N3GXKSA1, IPD200N15N3GBTMA1 offers the optimal balance of thermal performance (1 K/W R_thJC), compact DPAK footprint, and surface-mount manufacturability-making it ideal for high-volume, space-constrained power modules where automated assembly and thermal management are both priorities.

Availability

IPD200N15N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for IPD200N15N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-efficiency, high-frequency switching applications in data center, renewable energy, and e-mobility power systems.

FAQ

What is the maximum gate-source voltage rating for IPD200N15N3GBTMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10–15 V for turn-on and –5 to 0 V for turn-off to avoid Miller-induced false triggering. The typical gate threshold voltage range is 2–4 V at 90 µA drain current.

Does IPD200N15N3GBTMA1 include an integrated body diode, and what are its key parameters?

Yes, it integrates a monolithic body diode with 50 A continuous forward current rating, 220 A pulsed capability, and 1.0–1.2 V forward voltage at 50 A and 25 °C. Its reverse recovery time is 106 ns and reverse recovery charge is 332 nC, measured at V_R = 75 V, I_F = 50 A, and di_F/dt = 100 A/µs.

Can IPD200N15N3GBTMA1 be used in avalanche mode, and what is its rated energy capability?

Yes, it is fully rated for repetitive and single-pulse avalanche operation. The datasheet specifies 170 mJ single-pulse avalanche energy (E_AS) at I_D = 50 A, R_GS = 25 Ω, and T_j ≤ 175 °C. This allows safe clamping of inductive energy in flyback, boost, and motor drive circuits without external protection components.

What is the thermal resistance from junction to case, and how does it impact heatsink design?

The junction-to-case thermal resistance (R_thJC) is 1 K/W, measured under standard test conditions. This means a 150 W power dissipation results in a 150 K temperature rise from junction to case. Effective heatsinking must maintain case temperature ≤25 °C to keep junction below 175 °C, requiring ≥100 cm² of 2 oz copper with thermal vias or an external aluminum heatsink.