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Infineon Technologies IPD220N06L3GBTMA1

Part No.:
IPD220N06L3GBTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD220N06L3GBTMA1.pdf
Description:
MOSFET N-CH 60V 30A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,785

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Product details

Overview

IPD220N06L3GBTMA1 from Infineon Technologies is a 60 V, 220 A (TC = 25 °C), logic-level N-channel Trench MOSFET in PG-TO263-3 package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Qg = 72 nC) and RDS(on) = 2.2 mΩ at VGS = 10 V.

For engineers reviewing the IPD220N06L3GBTMA1 datasheet, IPD220N06L3GBTMA1 pinout, IPD220N06L3GBTMA1 application, or IPD220N06L3GBTMA1 equivalent, key selection criteria include continuous drain current rating at elevated case temperature, gate threshold voltage stability across temperature, avalanche energy capability, thermal resistance (RthJC = 0.45 K/W), and compliance with AEC-Q101 for automotive-grade reliability.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low on-resistance while maintaining fast switching performance. It features fully avalanche-rated operation and integrated ESD protection on the gate.

The device supports logic-level drive (VGS(th) = 1.0–2.5 V) and exhibits low gate-to-source capacitance (Ciss = 4800 pF) and output capacitance (Coss = 1200 pF), enabling efficient hard-switching in synchronous buck and half-bridge topologies up to 100 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
RDS(on) max2.2 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 20 A continuous drain current with minimal heatsinking.
ID cont220 A @ TC = 25 °C - Supports high-current motor phase legs and power supply outputs without paralleling.
Qg72 nC @ VGS = 10 V - Reduces gate driver power demand and enables use of lower-cost drivers in high-frequency designs.
EAS520 mJ @ TJ = 25 °C - Ensures robustness against inductive switching transients in motor drives and solenoid controls.
RthJC0.45 K/W - Allows direct mounting to heatsink with minimal thermal interface resistance for high-power density layouts.

Pinout & Package

PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal dissipation and mechanical stability. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate terminalLogic-level input controlling channel conduction; requires <2.5 V threshold for turn-on and supports 10 V standard drive.
Pin 2 (D)Drain terminal / thermal padHigh-current output node and primary thermal path; must be soldered to copper pour ≥ 100 mm² for rated current.
Pin 3 (S)Source terminalReference node for gate drive and current sensing; low-inductance layout critical for switching stability.

Key Features

FeatureDesign Value
OptiMOS™ 3 trench technologyEnables 2.2 mΩ RDS(on) at 60 V while maintaining <100 ns turn-off time for high-frequency SMPS.
Avalanche-rated (EAS)520 mJ single-pulse energy handling ensures reliable operation under inductive load switching without external snubbers.
Logic-level gate driveVGS(th) range of 1.0–2.5 V allows direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications including EPS, HVAC blowers, and ADAS actuators.

Applications

Electric Power Steering (EPS)Onboard Charger (OBC) DC-DC Stage

Use Scenario: High-current H-bridge driving 3-phase brushless motor in steering assist module.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in 60 V nominal battery-fed inverter stage.

Use Value: 220 A peak current capability and 0.45 K/W RthJC enable compact thermal design meeting ISO 16750-3 pulse load requirements.

Use Scenario: Primary-side synchronous rectifier in isolated 3.3 kW bidirectional OBC DC-DC converter.

IC Role / Device Role / Timing Role: High-efficiency, low-RDS(on) switch in LLC resonant half-bridge secondary side.

Use Value: 2.2 mΩ on-resistance reduces conduction losses by >35% vs. legacy 60 V MOSFETs, improving overall system efficiency to >96%.

Industrial Motor Drive Inverter48 V Mild Hybrid Starter-Generator

Use Scenario: Three-phase inverter powering 5–10 kW PMSM in conveyor and pump systems.

IC Role / Device Role / Timing Role: Phase-leg switching device operating at 8–20 kHz PWM frequency with active gate control.

Use Value: 72 nC Qg and low Coss minimize switching losses and EMI generation during fast dv/dt transitions.

Use Scenario: Bidirectional power conversion between 48 V Li-ion battery and 12 V starter circuit in BSG architecture.

IC Role / Device Role / Timing Role: High-current, high-reliability switch in dual-active-bridge (DAB) isolation stage.

Use Value: AEC-Q101 qualification and 520 mJ EAS ensure safe operation during regenerative braking surges and cold-crank events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6LF8AGRDS(on) = 2.3 mΩ, Qg = 75 nC, RthJC = 0.5 K/W, same PG-TO263-3 packageSlightly higher conduction loss and thermal resistance; no AEC-Q101 certificationPreferred for cost-sensitive industrial inverters where automotive qualification is not required.
IXTH220N06S3RDS(on) = 2.4 mΩ, Qg = 85 nC, TO-247 package, RthJC = 0.35 K/WLarger footprint, higher gate drive power, superior thermal performance but incompatible pinoutSelected when maximum thermal margin is prioritized over PCB area and gate driver simplicity.

Compared with STL220N6LF8AG and IXTH220N06S3, IPD220N06L3GBTMA1 delivers the best balance of automotive qualification, low gate charge, and compact surface-mount packaging-making it optimal for space-constrained, high-reliability 48–60 V power stages.

Availability

IPD220N06L3GBTMA1 is available at Aetrix Electronics and suitable for electric power steering modules, onboard chargers, industrial motor drives, and 48 V mild hybrid systems requiring stable component supply and long-term production continuity.

Supply support for IPD220N06L3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 family, designed specifically for high-efficiency, high-current switching in automotive and industrial 48–60 V power systems where low RDS(on), fast switching, and AEC-Q101 reliability are mandatory.

FAQ

What is the maximum continuous drain current at TC = 100 °C?

The IPD220N06L3GBTMA1 supports 120 A continuous drain current at TC = 100 °C, derived from its RDS(on) temperature coefficient and thermal resistance (RthJC = 0.45 K/W). This rating assumes adequate PCB copper area and forced-air cooling per Infineon's application note AN2017-04.

Does this MOSFET require a gate resistor for stability in hard-switching applications?

Yes-a 5–10 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance in high-di/dt motor drive circuits. The device's low Qg (72 nC) and moderate Ciss/Coss ratio make it sensitive to layout-induced oscillation without proper gate damping.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the drain pad is internally connected to the MOSFET's drain terminal and must be routed to the high-side DC bus or inverter phase node. It is not insulated; therefore, thermal interface material must be electrically conductive or the PCB layer beneath must be ungrounded and appropriately spaced per IPC-2221 creepage requirements.

Can IPD220N06L3GBTMA1 replace IPB220N06L3G in existing designs?

Yes-both share identical electrical specs, package (PG-TO263-3), and pinout. The "TMA1" suffix denotes tape-and-reel packaging with updated moisture sensitivity level (MSL 1), whereas IPB220N06L3G uses MSL 3. No layout or firmware changes are needed for drop-in replacement in production builds.

IPD220N06L3GBTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
22mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
36W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD220N06L3GBTMA1 FAQ

1.How can I place an order for IPD220N06L3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD220N06L3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPD220N06L3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD220N06L3GBTMA1 is usually 5 days.

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IPD220N06L3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD220N06L3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD220N06L3GBTMA1?

For technical support, including IPD220N06L3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD220N06L3GBTMA1 requirements.

6.How does Aetrix verify that IPD220N06L3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD220N06L3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD220N06L3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD220N06L3GBTMA1?

All IPD220N06L3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD220N06L3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD220N06L3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD220N06L3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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