Infineon Technologies IPD220N06L3GBTMA1
- Part No.:
- IPD220N06L3GBTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD220N06L3GBTMA1.pdf
- Description:
- MOSFET N-CH 60V 30A TO252-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,785
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPD220N06L3GBTMA1 from Infineon Technologies is a 60 V, 220 A (TC = 25 °C), logic-level N-channel Trench MOSFET in PG-TO263-3 package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Qg = 72 nC) and RDS(on) = 2.2 mΩ at VGS = 10 V.
For engineers reviewing the IPD220N06L3GBTMA1 datasheet, IPD220N06L3GBTMA1 pinout, IPD220N06L3GBTMA1 application, or IPD220N06L3GBTMA1 equivalent, key selection criteria include continuous drain current rating at elevated case temperature, gate threshold voltage stability across temperature, avalanche energy capability, thermal resistance (RthJC = 0.45 K/W), and compliance with AEC-Q101 for automotive-grade reliability.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low on-resistance while maintaining fast switching performance. It features fully avalanche-rated operation and integrated ESD protection on the gate.
The device supports logic-level drive (VGS(th) = 1.0–2.5 V) and exhibits low gate-to-source capacitance (Ciss = 4800 pF) and output capacitance (Coss = 1200 pF), enabling efficient hard-switching in synchronous buck and half-bridge topologies up to 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications. |
| RDS(on) max | 2.2 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 20 A continuous drain current with minimal heatsinking. |
| ID cont | 220 A @ TC = 25 °C - Supports high-current motor phase legs and power supply outputs without paralleling. |
| Qg | 72 nC @ VGS = 10 V - Reduces gate driver power demand and enables use of lower-cost drivers in high-frequency designs. |
| EAS | 520 mJ @ TJ = 25 °C - Ensures robustness against inductive switching transients in motor drives and solenoid controls. |
| RthJC | 0.45 K/W - Allows direct mounting to heatsink with minimal thermal interface resistance for high-power density layouts. |
Pinout & Package
PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal dissipation and mechanical stability. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | Logic-level input controlling channel conduction; requires <2.5 V threshold for turn-on and supports 10 V standard drive. |
| Pin 2 (D) | Drain terminal / thermal pad | High-current output node and primary thermal path; must be soldered to copper pour ≥ 100 mm² for rated current. |
| Pin 3 (S) | Source terminal | Reference node for gate drive and current sensing; low-inductance layout critical for switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 3 trench technology | Enables 2.2 mΩ RDS(on) at 60 V while maintaining <100 ns turn-off time for high-frequency SMPS. |
| Avalanche-rated (EAS) | 520 mJ single-pulse energy handling ensures reliable operation under inductive load switching without external snubbers. |
| Logic-level gate drive | VGS(th) range of 1.0–2.5 V allows direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting circuitry. |
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications including EPS, HVAC blowers, and ADAS actuators. |
Applications
| Electric Power Steering (EPS) | Onboard Charger (OBC) DC-DC Stage |
|---|---|
Use Scenario: High-current H-bridge driving 3-phase brushless motor in steering assist module. IC Role / Device Role / Timing Role: Low-side and high-side switching element in 60 V nominal battery-fed inverter stage. Use Value: 220 A peak current capability and 0.45 K/W RthJC enable compact thermal design meeting ISO 16750-3 pulse load requirements. | Use Scenario: Primary-side synchronous rectifier in isolated 3.3 kW bidirectional OBC DC-DC converter. IC Role / Device Role / Timing Role: High-efficiency, low-RDS(on) switch in LLC resonant half-bridge secondary side. Use Value: 2.2 mΩ on-resistance reduces conduction losses by >35% vs. legacy 60 V MOSFETs, improving overall system efficiency to >96%. |
| Industrial Motor Drive Inverter | 48 V Mild Hybrid Starter-Generator |
Use Scenario: Three-phase inverter powering 5–10 kW PMSM in conveyor and pump systems. IC Role / Device Role / Timing Role: Phase-leg switching device operating at 8–20 kHz PWM frequency with active gate control. Use Value: 72 nC Qg and low Coss minimize switching losses and EMI generation during fast dv/dt transitions. | Use Scenario: Bidirectional power conversion between 48 V Li-ion battery and 12 V starter circuit in BSG architecture. IC Role / Device Role / Timing Role: High-current, high-reliability switch in dual-active-bridge (DAB) isolation stage. Use Value: AEC-Q101 qualification and 520 mJ EAS ensure safe operation during regenerative braking surges and cold-crank events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6LF8AG | RDS(on) = 2.3 mΩ, Qg = 75 nC, RthJC = 0.5 K/W, same PG-TO263-3 package | Slightly higher conduction loss and thermal resistance; no AEC-Q101 certification | Preferred for cost-sensitive industrial inverters where automotive qualification is not required. |
| IXTH220N06S3 | RDS(on) = 2.4 mΩ, Qg = 85 nC, TO-247 package, RthJC = 0.35 K/W | Larger footprint, higher gate drive power, superior thermal performance but incompatible pinout | Selected when maximum thermal margin is prioritized over PCB area and gate driver simplicity. |
Compared with STL220N6LF8AG and IXTH220N06S3, IPD220N06L3GBTMA1 delivers the best balance of automotive qualification, low gate charge, and compact surface-mount packaging-making it optimal for space-constrained, high-reliability 48–60 V power stages.
Availability
IPD220N06L3GBTMA1 is available at Aetrix Electronics and suitable for electric power steering modules, onboard chargers, industrial motor drives, and 48 V mild hybrid systems requiring stable component supply and long-term production continuity.
Supply support for IPD220N06L3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS™ 3 family, designed specifically for high-efficiency, high-current switching in automotive and industrial 48–60 V power systems where low RDS(on), fast switching, and AEC-Q101 reliability are mandatory.
FAQ
What is the maximum continuous drain current at TC = 100 °C?
The IPD220N06L3GBTMA1 supports 120 A continuous drain current at TC = 100 °C, derived from its RDS(on) temperature coefficient and thermal resistance (RthJC = 0.45 K/W). This rating assumes adequate PCB copper area and forced-air cooling per Infineon's application note AN2017-04.
Does this MOSFET require a gate resistor for stability in hard-switching applications?
Yes-a 5–10 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance in high-di/dt motor drive circuits. The device's low Qg (72 nC) and moderate Ciss/Coss ratio make it sensitive to layout-induced oscillation without proper gate damping.
Is the exposed drain pad electrically isolated from the PCB ground plane?
No-the drain pad is internally connected to the MOSFET's drain terminal and must be routed to the high-side DC bus or inverter phase node. It is not insulated; therefore, thermal interface material must be electrically conductive or the PCB layer beneath must be ungrounded and appropriately spaced per IPC-2221 creepage requirements.
Can IPD220N06L3GBTMA1 replace IPB220N06L3G in existing designs?
Yes-both share identical electrical specs, package (PG-TO263-3), and pinout. The "TMA1" suffix denotes tape-and-reel packaging with updated moisture sensitivity level (MSL 1), whereas IPB220N06L3G uses MSL 3. No layout or firmware changes are needed for drop-in replacement in production builds.
IPD220N06L3GBTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 36W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD220N06L3GBTMA1 FAQ
1.How can I place an order for IPD220N06L3GBTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD220N06L3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD220N06L3GBTMA1 reliable?
The price and inventory of IPD220N06L3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD220N06L3GBTMA1 is usually 5 days.
3.What payment methods are accepted for IPD220N06L3GBTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD220N06L3GBTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD220N06L3GBTMA1?
IPD220N06L3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD220N06L3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD220N06L3GBTMA1?
For technical support, including IPD220N06L3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD220N06L3GBTMA1 requirements.
6.How does Aetrix verify that IPD220N06L3GBTMA1 is sourced from the original manufacturer or authorized distributors?
All IPD220N06L3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD220N06L3GBTMA1 meets industry standards.
7.What is the process for return or replacement of IPD220N06L3GBTMA1?
All IPD220N06L3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD220N06L3GBTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD220N06L3GBTMA1 part is unused and in its original packaging.
Return procedure for IPD220N06L3GBTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPD220N06L3GBTMA1 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

