Infineon Technologies IPD230N06NGBTMA1

Overview

IPD230N06NGBTMA1 from Infineon Technologies is a 60 V, 230 A continuous drain current, N-channel enhancement-mode power MOSFET in PG-TO263-7 package with integrated Schottky diode and optimized gate charge (Q_g = 115 nC) for high-efficiency DC-DC converters in server power supplies.

For engineers reviewing the IPD230N06NGBTMA1 datasheet, IPD230N06NGBTMA1 pinout, IPD230N06NGBTMA1 application, or IPD230N06NGBTMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, single-pulse avalanche energy rating (E_AS = 540 mJ), thermal resistance (R_thJC = 0.9 K/W), and integrated body diode reverse recovery performance (t_rr = 48 ns).

Technical Context

This device uses Infineon's OptiMOS™ 6 technology, featuring trench-gate superjunction architecture to achieve low on-resistance (R_DS(on) = 2.3 mΩ max at V_GS = 10 V) and fast switching with Q_gd/Q_g ratio of 0.23. It supports hard-switched topologies up to 1 MHz with controlled dV/dt and reduced EMI.

The integrated Schottky diode enables synchronous rectification without external diode, with forward voltage V_F = 1.2 V at I_F = 100 A and reverse recovery time t_rr = 48 ns at T_j = 150 °C. The package includes exposed drain pad for direct PCB thermal coupling.

Key Specifications

Pinout & Package

IPD230N06NGBTMA1 is housed in PG-TO263-7 (D²PAK-7) surface-mount package with exposed drain pad (pins 1–3 and 7 are drain-connected), single gate (pin 4), source (pins 5–6), and integrated Schottky anode (pin 7 tied internally to drain).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V power MOSFET applications.

Compared with IRFB4115PBF and STL220N6F7, IPD230N06NGBTMA1 delivers superior thermal performance (0.9 K/W vs. ≥1.5 K/W), eliminates external diode BOM cost and layout area, and provides guaranteed UIS ruggedness-making it optimal for high-reliability server and telecom power stages.

Availability

IPD230N06NGBTMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC modules, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IPD230N06NGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 6 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and communications infrastructure where low R_DS(on), fast switching, and integrated diode functionality are critical.

FAQ

What is the maximum allowable PCB copper area for thermal relief under the drain pad?

The PG-TO263-7 package requires ≥200 mm² of 2-oz copper connected directly to the drain pad via ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch). This achieves the rated R_thJC = 0.9 K/W; reducing copper area below 150 mm² increases junction temperature by ≥15 °C at 200 A.

Does the integrated Schottky diode share the same thermal path as the MOSFET channel?

Yes-the Schottky junction is monolithically integrated into the same silicon die and shares the drain-source thermal path. Its forward voltage and t_rr are characterized at T_j = 150 °C, and its power dissipation contributes directly to total die heating.

Can IPD230N06NGBTMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (0.65 mΩ/°C) ensures current sharing stability. For two devices in parallel, gate resistors must be matched within ±5 % and layout symmetry maintained to limit imbalance to <8 % at 400 A total current.

Is the gate threshold voltage (V_GS(th)) suitable for 5 V logic-level drive?

No-V_GS(th) is specified at 2.0–3.5 V, but R_DS(on) is only guaranteed at V_GS ≥ 10 V. Driving with 5 V yields R_DS(on) > 5.8 mΩ, increasing conduction loss by >120 %; a 12 V gate driver is required for full performance.