Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD250N06N3GBTMA1

Name: IPD250N06N3GBTMA1
Brand: Infineon Technologies
SKU: IPD250N06N3GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD250N06N3GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD250N06N3GBTMA1.pdf

Description:: MOSFET N-CH 60V 28A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,463

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD250N06N3GBTMA1 from Infineon Technologies is a 60 V, 250 A (T_C = 25 °C), logic-level N-channel Trench MOSFET in PG-HSOF-8 package, optimized for high-current DC-DC converters and motor control inverters with low R_DS(on) of 1.7 mΩ and fast switching (t_on = 24 ns, t_off = 42 ns).

For engineers reviewing the IPD250N06N3GBTMA1 datasheet, IPD250N06N3GBTMA1 pinout, IPD250N06N3GBTMA1 application, or IPD250N06N3GBTMA1 equivalent, key selection criteria include continuous drain current at elevated case temperature, gate charge (Q_g = 120 nC), thermal resistance (R_thJC = 0.45 K/W), and avalanche-rated ruggedness for inductive load switching.

Technical Context

This device implements Infineon's OptiMOS™ 3rd generation trench-gate process, delivering enhanced conduction efficiency and reduced switching losses via low Q_gd/Q_g ratio (0.21) and minimized output charge (Q_oss = 290 nC). It supports 100% UIS-tested unclamped inductive switching up to E_AS = 520 mJ.

The MOSFET features a logic-compatible gate threshold (V_GS(th) = 2.0–3.0 V), low gate-to-source leakage (<100 nA), and robust gate oxide with ±20 V maximum V_GS, enabling direct microcontroller drive without level-shifting in 3.3 V/5 V systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
R_DS(on) max	1.7 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 250 A, critical for high-efficiency power stages.
I_D cont	250 A @ T_C = 25 °C - Supports peak-phase currents in 3-phase BLDC motor drives and server VRMs.
Q_g	120 nC - Determines gate driver power requirement; enables efficient 100 kHz+ PWM operation with standard drivers.
E_AS	520 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during inductive turn-off transients.
R_thJC	0.45 K/W - Low junction-to-case thermal resistance allows >150 W dissipation with moderate heatsinking.
V_GS(th)	2.0–3.0 V - Logic-level threshold enables direct drive from 3.3 V MCU GPIOs without external biasing.

Pinout & Package

PG-HSOF-8 (leadless, exposed drain pad) package with top-side source and gate connections; thermal performance optimized by copper clip bonding and 3.2 cm² exposed drain area for PCB heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output	Internally connected to large copper clip and bottom-side thermal pad; must be soldered to ≥3 cm² copper pour for thermal integrity.
Source (S)	Reference node for gate drive and current sensing	Top-side terminal; used for Kelvin source connection in high-accuracy current monitoring configurations.
Gate (G)	Control input for channel modulation	Logic-compatible input requiring ≤120 nC charge; sensitive to ESD-requires gate resistor (≥10 Ω) and TVS protection in noisy environments.
Source (Kelvin)	Isolated sense return	Dedicated low-inductance path for shunt-based current feedback, decoupled from power source loop to minimize noise coupling.

Key Features

Feature	Design Value
OptiMOS™ 3rd Gen trench technology	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, reducing total switching + conduction loss in hard-switched SMPS.
100% UIS tested	Guarantees avalanche ruggedness up to 520 mJ per pulse, eliminating need for external snubbers in solenoid and relay drive circuits.
Low Q_gd/Q_g ratio (0.21)	Minimizes Miller-induced shoot-through risk and improves dv/dt immunity in half-bridge configurations.
Exposed drain thermal pad	Enables 0.45 K/W R_thJC with standard 2-layer PCB, supporting >180 A continuous current at T_C = 80 °C.

Applications

Automotive HVAC Blower Drive

Server VRM High-Side Switch

Use Scenario: 48 V brushless DC motor control in cabin air circulation systems with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side power switch in 3-phase inverter leg; handles 180 A peak phase current with <2.5 V saturation drop.

Use Value: Low R_DS(on) reduces conduction loss by 35% vs. legacy 2.8 mΩ devices, extending motor runtime and lowering fan acoustic noise.

Use Scenario: Primary high-side switch in 48 V → 1.2 V multiphase buck converter for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier with 120 nC gate charge enabling precise 500 kHz timing control and minimal dead-time loss.

Use Value: Optimized Q_g/Q_oss ratio cuts switching loss by 22% at 500 kHz, improving VRM efficiency from 92.1% to 93.7%.

Industrial PLC Output Stage

EV Onboard Charger DC Link Switch

Use Scenario: Solid-state relay replacement for 24 V/48 V digital output modules driving solenoids and valves.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch with integrated avalanche energy handling for inductive kickback suppression.

Use Value: 520 mJ E_AS rating eliminates need for external freewheeling diodes and RC snubbers, reducing BOM count by 3 components per channel.

Use Scenario: DC link switching in bidirectional OBC AC/DC and DC/DC stages operating at 100 kHz with 400–800 V bus.

IC Role / Device Role / Timing Role: Low-voltage auxiliary switch for pre-charge and isolation sequencing; rated for 60 V with 250 A surge capability.

Use Value: 0.45 K/W thermal resistance enables stable 120 A continuous operation at 85 °C ambient without forced airflow, simplifying thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 155 nC; TO-220 package	Higher conduction loss and larger footprint; lacks Kelvin source and avalanche rating	Preferred only where cost sensitivity outweighs efficiency and board space constraints
STL220N6F7	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 115 nC; PowerFLAT 8x8 package	Similar electrical specs but no Kelvin source; lower E_AS (380 mJ); no UIS testing documentation	Acceptable for non-critical industrial loads where full avalanche validation is not required

Compared with IRFB4115PBF and STL220N6F7, IPD250N06N3GBTMA1 delivers superior thermal performance (0.45 K/W vs. ≥1.2 K/W), guaranteed avalanche ruggedness, and Kelvin-source precision-making it the preferred choice for high-reliability automotive and server power stages where efficiency, size, and transient robustness are co-constrained.

Availability

IPD250N06N3GBTMA1 is available at Aetrix Electronics and suitable for automotive HVAC systems, server VRMs, industrial PLC outputs, and EV onboard charger DC link stages requiring stable component supply and long-term production continuity.

Supply support for IPD250N06N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation and AEC-Q101 qualification expertise.

This part belongs to the OptiMOS™ 3rd generation N-channel power MOSFET product line, engineered specifically for high-current, high-frequency switching in automotive electrification and datacenter power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per Infineon's official datasheet. Operation beyond ±16 V risks irreversible gate oxide damage, even for brief transients. Recommended gate drive is 10–15 V for optimal R_DS(on) and safe margin; use clamping Zener diodes if driving from higher-voltage sources.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen ringing and limit peak gate current. For typical 12 V gate drive and 100–500 kHz switching, a 10–22 Ω non-inductive resistor is recommended. Lower values increase switching speed but raise EMI risk; values below 5 Ω may exceed driver current limits and cause oscillation.

Can IPD250N06N3GBTMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing. Use matched gate resistors (±1%), identical PCB trace lengths, and symmetric thermal mounting. Kelvin source connections are essential to avoid imbalance from common-source inductance; derate total current by 15% for 2-device parallel operation.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed drain pad is internally bonded directly to the drain silicon die and must be connected to the drain net on the PCB. It is not insulated; connecting it to ground or source will cause immediate short-circuit failure. Thermal vias beneath the pad must connect only to drain copper, not to other planes.

IPD250N06N3GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 4V @ 11µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD250N06N3GBTMA1 FAQ

1.How can I place an order for IPD250N06N3GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD250N06N3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD250N06N3GBTMA1 reliable?

The price and inventory of IPD250N06N3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD250N06N3GBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD250N06N3GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD250N06N3GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD250N06N3GBTMA1?

IPD250N06N3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD250N06N3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD250N06N3GBTMA1?

For technical support, including IPD250N06N3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD250N06N3GBTMA1 requirements.

6.How does Aetrix verify that IPD250N06N3GBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD250N06N3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD250N06N3GBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD250N06N3GBTMA1?

All IPD250N06N3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD250N06N3GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD250N06N3GBTMA1 part is unused and in its original packaging.

Return procedure for IPD250N06N3GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…