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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD25CNE8N G

Name: IPD25CNE8N G
Brand: Infineon Technologies
SKU: IPD25CNE8N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD25CNE8N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD25CNE8N G.pdf

Description:: MOSFET N-CH 85V 35A TO252-3

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Product details

Overview

IPD25CNE8N G from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO252-3 (DPAK) package, rated for 85 V V_DS, 35 A continuous drain current at T_C = 25 °C, and 25 mΩ max R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, halogen-free construction per IEC61249-2-21, and is qualified per JEDEC standards for industrial power conversion.

For engineers reviewing the IPD25CNE8N G datasheet, IPD25CNE8N G pinout, IPD25CNE8N G application, or IPD25CNE8N G equivalent, this device is selected for high-frequency synchronous rectification, DC-DC converter primary/secondary switches, and motor drive half-bridge legs where low conduction loss and fast switching are critical.

Technical Context

This MOSFET employs a trench-based OptiMOS™2 process optimized for gate charge × R_DS(on) figure-of-merit (FOM), enabling efficient operation above 100 kHz. Its 19–25 mΩ typical R_DS(on) at 10 V gate drive supports low conduction losses in 12–48 V bus systems.

Dynamic parameters include 1560–2070 pF input capacitance, 23–35 pF reverse transfer capacitance, and 9–12 nC gate-to-source charge - all measured at V_DD = 40 V and I_D = 35 A - supporting predictable turn-on/turn-off timing in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	85 V - supports 48 V nominal bus designs with ≥1.7× voltage margin against transients
R_DS(on) max	25 mΩ @ V_GS = 10 V, I_D = 35 A - enables ≤0.031 W conduction loss at 35 A
I_D cont. (T_C=25°C)	35 A - requires ≥6 cm² copper area on FR4 PCB for thermal compliance
E_AS	65 mJ - withstands single-pulse inductive energy without failure under specified test conditions
Q_g total	23–31 nC - determines gate driver current requirement for <20 ns switching transitions
t_r/t_f	4–6 ns / 3–4 ns - enables MHz-class switching in resonant and ZVS converters
T_j max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IPD25CNE8N G uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires 10 V drive for full enhancement; gate resistance R_G = 1.1 Ω internal
Pin 2 (D)	Drain terminal (exposed pad)	Main current path; electrically and thermally connected to PCB copper pour; must be soldered to ≥6 cm² copper
Pin 3 (S)	Source terminal	Reference node for gate drive; connects to low-side return path; forms common node with body diode cathode

Key Features

Feature	Design Value
N-channel normal-level logic	Operates with standard 10 V gate drivers; no level-shifting required for 5 V or 3.3 V controller interfaces
Low R_DS(on) × Q_g FOM	~575 mΩ·nC - improves efficiency in high-frequency SMPS by reducing combined conduction + switching loss
Robust body diode	1.0–1.2 V V_SD @ 35 A, t_rr = 85 ns - supports synchronous rectification without external Schottky replacement
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 for industrial temperature cycling and humidity exposure
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU - suitable for green manufacturing

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-current, multi-phase buck converter delivering 12 V @ >100 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with precise dead-time control.

Use Value: 25 mΩ R_DS(on) reduces conduction loss by ~35% vs. legacy 40 mΩ devices, lowering thermal load on VRM heatsinks.

Use Scenario: 48 V to 12 V isolated DC-DC module for PLC I/O power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp topology.

Use Value: 85 ns t_rr and low Q_rr minimize reverse recovery loss, improving efficiency by 1.2% at full load.

Brushless Motor Drive Half-Bridge

Telecom Rectifier Module

Use Scenario: 24 V BLDC inverter for HVAC fan control with space-constrained PCB layout.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 3-phase inverter leg, driven by bootstrap gate driver.

Use Value: 175 °C T_j,max allows operation in enclosed motor housings without derating at ambient up to 105 °C.

Use Scenario: 380 V DC to 48 V DC telecom rectifier using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in ZVS-enabled bridge leg.

Use Value: 2070 pF C_iss and 35 pF C_rss enable reliable zero-voltage switching down to 200 kHz with minimal circulating current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB26CNE8N G	PG-TO263-3 package; 26 mΩ max R_DS(on); identical V_DS/I_D ratings	Better thermal dissipation (R_thJC = 2.1 K/W vs. 2.5 K/W); requires larger footprint	Select when board space permits and junction temperature margin is critical
IPP26CNE8N G	PG-TO220-3 through-hole package; same R_DS(on) and V_DS; higher R_thJC (2.5 K/W)	Enables manual assembly and higher mechanical robustness in vibration-prone environments	Select for prototyping, repair, or mechanically demanding industrial deployments

Compared with IPB26CNE8N G and IPP26CNE8N G, IPD25CNE8N G offers optimal balance of thermal performance, PCB area, and manufacturability for automated SMT production in high-volume power modules.

Availability

IPD25CNE8N G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, brushless motor drives, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPD25CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOS™2 family, designed specifically for high-efficiency, high-frequency power conversion in computing, industrial, and telecom infrastructure where low R_DS(on) × Q_g FOM is essential.

FAQ

What is the maximum recommended gate drive voltage for IPD25CNE8N G?

The absolute maximum gate-source voltage is ±20 V, but the device achieves full enhancement at V_GS = 10 V. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk. For reliable long-term operation, 10 V ±0.5 V is the recommended gate drive level per Infineon's application notes.

Can IPD25CNE8N G be used in avalanche mode?

Yes - it is characterized for single-pulse avalanche energy E_AS = 65 mJ under defined test conditions (I_D = 35 A, R_GS = 25 Ω). However, repetitive avalanche operation is not guaranteed and must be validated per application-specific stress profiles; Infineon does not specify repetitive avalanche rating for this part.

Is the body diode suitable for synchronous rectification without external diodes?

Yes - its 85 ns reverse recovery time, 165 nC Q_rr, and 1.0–1.2 V forward voltage at 35 A make it viable for synchronous rectification in forward, LLC, and phase-shifted full-bridge topologies up to 300 kHz. Layout must minimize source inductance to avoid voltage overshoot during commutation.

Does IPD25CNE8N G require a heatsink when mounted on a standard FR4 PCB?

Yes - with 6 cm² of 70 µm copper on a vertical FR4 board, its R_thJA is 40 K/W. At 35 A and 25 mΩ, power dissipation reaches ~30.6 W, resulting in ΔT ≈ 1224 K above ambient - physically impossible without forced cooling. A heatsink or thermal interface to chassis is mandatory for continuous operation above 5 A.

IPD25CNE8N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 85 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2070 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD25CNE8N G FAQ

1.How can I place an order for IPD25CNE8N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD25CNE8N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD25CNE8N G reliable?

The price and inventory of IPD25CNE8N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD25CNE8N G is usually 5 days.

3.What payment methods are accepted for IPD25CNE8N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD25CNE8N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD25CNE8N G?

IPD25CNE8N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD25CNE8N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD25CNE8N G?

For technical support, including IPD25CNE8N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD25CNE8N G requirements.

6.How does Aetrix verify that IPD25CNE8N G is sourced from the original manufacturer or authorized distributors?

All IPD25CNE8N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD25CNE8N G meets industry standards.

7.What is the process for return or replacement of IPD25CNE8N G?

All IPD25CNE8N G units undergo pre-shipment inspection (PSI). If there is an issue with IPD25CNE8N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD25CNE8N G part is unused and in its original packaging.

Return procedure for IPD25CNE8N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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