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Infineon Technologies IPD25DP06LMATMA1
- Part No.:
- IPD25DP06LMATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD25DP06LMATMA1.pdf
- Description:
- MOSFET P-CH 60V 6.5A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,621
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Product details
Overview
IPD25DP06LMATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 250 mΩ maximum RDS(on) at VGS = -4.5 V, and -6.5 A continuous drain current at TC = 25 °C. It features logic-level gate drive compatibility, 100% avalanche testing, and D-PAK (PG-TO252-3) packaging with exposed drain tab for thermal performance. It serves as a high-reliability load switch in industrial DC power distribution systems.
For engineers reviewing the IPD25DP06LMATMA1 datasheet, IPD25DP06LMATMA1 pinout, IPD25DP06LMATMA1 application, or IPD25DP06LMATMA1 equivalent, key selection criteria include verified -4.5 V logic-level turn-on, low RDS(on) stability over temperature, avalanche energy rating of 75 mJ, and JEDEC-qualified industrial-grade reliability.
Technical Context
This device operates as a single P-channel power switch with enhancement-mode behavior: conduction initiates only when VGS falls below threshold (–1.0 to –2.0 V), enabling active-high control via inverted gate drive. Its optimized charge profile-Qg = 13.8 nC, Qgd = 3.9 nC-supports fast switching in 100–500 kHz DC-DC and motor control topologies.
Thermal design relies on the exposed drain tab: RthJC = 5.3 °C/W enables 28 W dissipation at TC = 25 °C, while RthJA = 75 °C/W reflects performance on standard FR4 PCBs. The integrated body diode exhibits VSD = –0.9 to –1.2 V at –6.5 A and trr = 37 ns under defined dI/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –60 V - Maximum blocking voltage in off-state; supports 48 V nominal bus designs with 20 % margin. |
| RDS(on), max | 250 mΩ @ VGS = –4.5 V - Confirmed on-resistance at logic-level drive; enables direct MCU GPIO control without level-shifting. |
| ID, cont | –6.5 A @ TC = 25 °C - Continuous current capability with heatsink; derates to –4.5 A at TC = 100 °C. |
| EAS | 75 mJ - Single-pulse avalanche energy; ensures robustness against inductive switching transients in relay/motor drive circuits. |
| Qg | 13.8 nC - Total gate charge; determines driver strength requirement for <100 ns switching transitions. |
| VGS(th) | –1.0 to –2.0 V - Gate threshold range; guarantees reliable turn-on with 3.3 V or 5 V logic outputs. |
| trr | 37 ns - Reverse recovery time of internal body diode; limits shoot-through risk in synchronous rectification. |
Pinout & Package
IPD25DP06LMATMA1 uses the PG-TO252-3 (D-PAK) package with an exposed drain tab on the bottom side for thermal conduction. Pin 1 is Gate, Pin 2 is Drain (tab), and Pin 3 is Source - confirmed per Infineon's official package outline and datasheet Figure 10.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives logic-level gate drive signal; requires no external level shifter for 3.3 V/5 V microcontrollers. |
| Drain tab (Pin 2) | Power output / heat sink interface | Exposed copper pad electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical performance. |
| Pin 3 (Source) | Reference node / return path | Connected to system ground or high-side rail reference; defines gate-to-source voltage for switching control. |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free, halogen-free construction | Complies with RoHS and IEC61249-2-21; eliminates hazardous substances without compromising thermal or electrical performance. |
| 100% avalanche tested | Each unit validated to withstand 75 mJ single-pulse avalanche energy; eliminates field failure due to inductive kickback. |
| Logic-level gate drive | VGS(th) ≤ –2.0 V and RDS(on) specified at –4.5 V; enables direct interfacing with standard digital outputs. |
| JEDEC-qualified for industrial use | Rated for operation from –55 °C to +175 °C junction temperature; qualified per JESD47 stress-test standards. |
| OptiMOS™ trench technology | Delivers 25 % lower RDS(on) × Qg figure-of-merit vs. planar P-channel MOSFETs; improves efficiency in space-constrained designs. |
Applications
| Industrial Power Supply OR-ing | Automotive Body Control Module |
|---|---|
|
Use Scenario: Dual 24 V supply redundancy in programmable logic controllers, where one MOSFET blocks reverse current if primary supply fails. IC Role / Device Role / Timing Role: High-side reverse-polarity protection switch with fast turn-off to prevent backfeed during supply switchover. Use Value: 250 mΩ RDS(on) minimizes voltage drop and heat generation during continuous 6 A operation, extending system uptime. |
Use Scenario: Load switching for interior lighting, window lift motors, and seat actuators in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled by automotive microcontroller GPIO pins. Use Value: Logic-level gate compatibility eliminates need for discrete level shifters, reducing BOM count and PCB area. |
| DC Motor Direction Control | Hot-Swap Circuit Protection |
|
Use Scenario: Half-bridge leg in brushed DC motor drivers for HVAC blowers or cooling fans in industrial enclosures. IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling path provider during PWM off-time via integrated body diode. Use Value: 37 ns trr and 63 nC Qrr reduce switching losses and EMI during commutation cycles. |
Use Scenario: Inrush current limiting and fault isolation in modular server power shelves and telecom line cards. IC Role / Device Role / Timing Role: Controlled soft-start and overcurrent shutdown element in hot-swap controller reference designs. Use Value: 75 mJ EAS rating ensures survival during repeated plug-in/out events with capacitive loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | RDS(on) = 200 mΩ @ VGS = –10 V only; not characterized at –4.5 V; Qg = 80 nC. | Requires –10 V gate drive; unsuitable for 3.3 V logic systems without level shifting. | Select only if gate drive voltage ≥ –10 V is available and higher switching loss is acceptable. |
| DMG2305UVT-7 | RDS(on) = 45 mΩ @ VGS = –4.5 V but rated only to –20 V VDS; ID = –4.2 A. | Limited to low-voltage (<24 V) applications; insufficient for 48 V industrial bus protection. | Prefer for compact 3.3 V–driven loads under 20 V, not for –60 V blocking requirements. |
Compared with IRF9540NPBF and DMG2305UVT-7, IPD25DP06LMATMA1 uniquely delivers –60 V blocking, verified –4.5 V logic-level operation, and industrial temperature qualification-making it the only option meeting all three requirements simultaneously in mid-power P-channel switching.
Availability
IPD25DP06LMATMA1 is available at Aetrix Electronics and suitable for industrial power supply OR-ing, automotive body control modules, DC motor direction control, and hot-swap circuit protection requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IPD25DP06LMATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
IPD25DP06LMATMA1 belongs to the OptiMOS™ P-channel power transistor product line, engineered specifically for high-efficiency, logic-level-controlled switching in industrial and automotive power systems where reliability under thermal and electrical stress is critical.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The datasheet specifies –4.5 A continuous drain current at TC = 100 °C under VGS = –10 V. This derating reflects thermal limitations of the D-PAK package and ensures safe operation without exceeding 175 °C maximum junction temperature.
Is the drain tab electrically isolated from the PCB mounting plane?
No-the drain tab is electrically connected to the drain terminal (Pin 2) and must be soldered directly to a PCB copper pour tied to the drain net. Electrical isolation would compromise both thermal performance and functionality, as the tab carries full load current.
Does this MOSFET require a gate resistor for stability?
Yes-a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 15 pF) and PCB trace inductance. The datasheet's switching time test condition uses RG,ext = 1.6 Ω, confirming sensitivity to gate loop impedance.
Can IPD25DP06LMATMA1 replace N-channel MOSFETs in high-side configurations?
No-it is a P-channel device intended for high-side switching where source connects to the positive rail. Replacing an N-channel high-side switch would require redesigning gate drive to provide negative VGS; it cannot operate as a drop-in substitute without circuit modification.
IPD25DP06LMATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 420 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 28W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-313
IPD25DP06LMATMA1 FAQ
1.How can I place an order for IPD25DP06LMATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD25DP06LMATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD25DP06LMATMA1 reliable?
The price and inventory of IPD25DP06LMATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD25DP06LMATMA1 is usually 5 days.
3.What payment methods are accepted for IPD25DP06LMATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD25DP06LMATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD25DP06LMATMA1?
IPD25DP06LMATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD25DP06LMATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD25DP06LMATMA1?
For technical support, including IPD25DP06LMATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD25DP06LMATMA1 requirements.
6.How does Aetrix verify that IPD25DP06LMATMA1 is sourced from the original manufacturer or authorized distributors?
All IPD25DP06LMATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD25DP06LMATMA1 meets industry standards.
7.What is the process for return or replacement of IPD25DP06LMATMA1?
All IPD25DP06LMATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD25DP06LMATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD25DP06LMATMA1 part is unused and in its original packaging.
Return procedure for IPD25DP06LMATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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