Infineon Technologies IPD25DP06NMATMA1

Overview

IPD25DP06NMATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for high-efficiency DC-DC conversion and load switching in industrial power supplies, featuring -60 V V_DS, 250 mΩ max R_DS(on) at V_GS = -10 V, -6.5 A continuous drain current, 100% avalanche tested, and PG-TO252-3 (D-PAK) package with exposed drain tab for thermal performance.

For engineers reviewing the IPD25DP06NMATMA1 datasheet, IPD25DP06NMATMA1 pinout, IPD25DP06NMATMA1 application, or IPD25DP06NMATMA1 equivalent, key selection criteria include negative-channel logic-level gate drive compatibility, low conduction loss in high-side switch configurations, robust single-pulse avalanche energy (75 mJ), and RoHS/halogen-free compliance for industrial-grade reliability.

Technical Context

This OptiMOS™ power transistor operates as a normally-off P-channel switch requiring negative gate-source voltage for turn-on. Its -4.5 V to -10 V gate threshold range (V_GS(th) = -2.1 to -4.0 V) enables direct interface with standard microcontroller GPIOs when used with level-shifting or open-drain drivers.

The device delivers stable R_DS(on) across temperature (±20% variation from -40 °C to 150 °C) and supports fast switching via low gate charge (Q_g = 10.6 nC, Q_gd = 4.2 nC) and minimal output capacitance (C_oss = 62 pF), reducing switching losses in synchronous buck and OR-ing applications.

Key Specifications

Pinout & Package

IPD25DP06NMATMA1 uses the PG-TO252-3 (D-PAK) surface-mount package with an exposed drain tab on the bottom side for enhanced thermal dissipation. The package is lead-free, halogen-free, and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF4905PBF and DMT6009LPS-13, IPD25DP06NMATMA1 offers optimal balance of voltage margin, thermal performance in D-PAK, and moderate gate drive demand-making it ideal for space-constrained industrial 48 V systems needing robustness without excessive cost or complexity.

Availability

IPD25DP06NMATMA1 is available at Aetrix Electronics and suitable for industrial power supplies, high-side load switches, and motor driver half-bridges requiring stable component supply, JEDEC-qualified reliability, and long-term manufacturability.

Supply support for IPD25DP06NMATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™ P-channel power transistor product line, engineered specifically for high-efficiency, high-reliability industrial DC-DC conversion and load switching where thermal robustness and avalanche capability are critical.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The IPD25DP06NMATMA1 has a maximum junction temperature (T_j) of 175 °C. At T_C = 100 °C, its continuous drain current drops to -5.0 A (vs. -6.5 A at 25 °C), per the derating curve in Figure 2. This reflects silicon thermal limits and package thermal resistance (R_thJC = 5.3 °C/W); actual usable current depends on PCB copper area and ambient airflow.

Can this MOSFET be driven directly by a 3.3 V microcontroller GPIO?

No-its V_GS(th) range (-2.1 to -4.0 V) requires a negative gate-source voltage for reliable turn-on, so a 3.3 V GPIO alone cannot activate it. A dedicated P-channel gate driver (e.g., TC4427 configured for inverting logic) or level-shifting circuit generating ≥-4.5 V is required to achieve specified R_DS(on) and avoid linear-mode operation.

Is the body diode suitable for freewheeling in inductive switching applications?

Yes-the integrated body diode has V_SD = 0.9–1.2 V at -6.5 A and t_rr = 41 ns, making it suitable for freewheeling in non-synchronous buck or flyback topologies. However, its Q_rr = 80 nC may cause minor switching loss; for high-frequency or high-efficiency designs, external Schottky clamping is optional but not required.

How does the 100% avalanche testing impact design margin in relay-driving circuits?

Each unit undergoes single-pulse avalanche stress testing to 75 mJ, verifying capability to absorb inductive energy from relay coils (e.g., 24 V/1 A coil with L ≈ 100 mH yields ~12 mJ). This eliminates need for external snubbers in most industrial relay interfaces and provides design margin against unexpected transients or layout parasitics.