Infineon Technologies IPD25N06S4L30ATMA1

Overview

IPD25N06S4L30ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-11 package, rated for 60 V V_DS, 25 A continuous drain current at T_C = 25°C, and 30 mΩ max R_DS(on) at V_GS = 10 V. It features 100% avalanche testing, 175°C operating temperature, and integrated body diode with 0.95 V typical V_SD at 25 A.

For engineers reviewing the IPD25N06S4L30ATMA1 datasheet, IPD25N06S4L30ATMA1 pinout, IPD25N06S4L30ATMA1 application, or IPD25N06S4L30ATMA1 equivalent, key selection criteria include its 30 mΩ R_DS(on) at 10 V gate drive, 92 A pulsed drain capability, 12 mJ single-pulse avalanche energy, and automotive-grade reliability per AEC-Q101.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction and switching losses in DC-DC converters and motor control stages. Its 12.5 nC total gate charge (Q_g) and 3.9 nC gate-to-source charge (Q_gs) enable fast turn-on with minimal driver burden, while C_iss = 1220 pF and C_rss = 32 pF support stable operation under high dv/dt conditions.

The integrated Schottky-like body diode delivers 0.95 V forward voltage at 25 A and 25°C, with 8 ns reverse recovery time and 8 nC Q_rr, reducing commutation losses in synchronous rectification and H-bridge topologies. Thermal resistance R_thJC = 5.1 K/W ensures efficient heat transfer to PCB copper when mounted on 6 cm² cooling area.

Key Specifications

Pinout & Package

IPD25N06S4L30ATMA1 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged in standard DPAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with STL220N6F7 and IRFZ44NPBF, IPD25N06S4L30ATMA1 uniquely balances AEC-Q101 compliance, DPAK SMT compatibility, 30 mΩ R_DS(on), and 12 mJ avalanche ruggedness-making it optimal for production automotive electronics where reliability, manufacturability, and thermal margin are jointly critical.

Availability

IPD25N06S4L30ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V motor drives, 48 V telecom DC-DC converters, and on-board charger auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for IPD25N06S4L30ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion where low R_DS(on), fast switching, and ruggedness under transient stress are mandatory.

FAQ

Is IPD25N06S4L30ATMA1 suitable for 12 V automotive battery disconnect applications?

Yes. Its 60 V V_DS rating provides 2× margin over nominal 12 V systems, and AEC-Q101 qualification ensures robustness against load dump transients (ISO 7637-2 Pulse 5a). The 25 A continuous rating supports typical starter-battery isolation switches, and the 175°C junction rating accommodates under-hood thermal environments.

What is the recommended PCB layout for thermal performance?

Mount the device on a 40 mm × 40 mm FR4 PCB with ≥6 cm² of 70 µm thick copper connected directly to the exposed drain pad. Use ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) under the pad to inner-layer ground planes. Keep gate traces short and shielded from drain noise to prevent false triggering.

Does this MOSFET require a gate resistor for stability?

Yes. A 3.5 Ω gate resistor is specified in the datasheet for dynamic characterization (t_d(on), t_r). For production use, select 2.2–10 Ω based on switching speed requirements and EMI constraints. Lower values improve rise/fall times but increase ringing risk; higher values dampen oscillation but extend switching losses.

Can IPD25N06S4L30ATMA1 replace older OptiMOS™-T1 devices in existing designs?

Yes, with verification. It shares identical PG-TO252-3-11 footprint and pinout with IPD22N06S4L-30, but offers lower R_DS(on) (30 mΩ vs. 33 mΩ), improved Q_g, and tighter V_GS(th) distribution. Layout changes are unnecessary, though gate drive timing and thermal margins should be rechecked for full-load operation.