Infineon Technologies IPD26N06S2L35ATMA1

Overview

IPD26N06S2L35ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It features a 55 V V_DS, 35 mΩ R_DS(on) at V_GS = 10 V, 30 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification. It is used in 12 V automotive body control modules for high-side load switching with low conduction loss.

For engineers reviewing the IPD26N06S2L35ATMA1 datasheet, IPD26N06S2L35ATMA1 pinout, IPD26N06S2L35ATMA1 application, or IPD26N06S2L35ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (80 mJ), thermal resistance (R_thJC = 2.2 K/W), and TO252-3 package compatibility with PCB cooling requirements.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, and its 100% unclamped inductive switching (UIS) tested design supports robust operation in inductive load circuits.

The integrated body diode exhibits low forward voltage (0.95–1.3 V at 26 A) and fast reverse recovery (t_rr = 40 ns, Q_rr = 36 nC), reducing switching losses in synchronous rectification and half-bridge topologies. Thermal design is enabled by a low junction-to-case resistance of 2.2 K/W and rated operation up to 175 °C.

Key Specifications

Pinout & Package

IPD26N06S2L35ATMA1 is housed in PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal and electrical connection. The package complies with MSL1 reflow profile (peak 260 °C) and is lead-free per RoHS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with STL220N6F7 and IRL3803PBF, IPD26N06S2L35ATMA1 offers optimal balance of automotive qualification, thermal performance (2.2 K/W), and proven ruggedness in 12 V body electronics - making it preferred for production-grade OEM designs requiring long-term supply stability and zero-failure field performance.

Availability

IPD26N06S2L35ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor starters, LED headlamp drivers, and DC-DC synchronous rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPD26N06S2L35ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 2nd generation logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive body electronics and industrial power conversion.

FAQ

Is IPD26N06S2L35ATMA1 suitable for high-side switching in 12 V automotive systems?

Yes. Its 55 V V_DS, AEC-Q101 qualification, and 175 °C operating temperature make it suitable for high-side configurations in automotive body electronics. The logic-level gate (V_GS(th) = 1.2–2.0 V) allows direct drive from 3.3 V or 5 V microcontrollers, and its 80 mJ avalanche rating handles inductive kickback from solenoids and lamps without external clamping.

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C and V_GS = 10 V, the maximum continuous drain current is 22 A. This value is derated from the 30 A rating at 25 °C due to thermal limitations, and assumes proper PCB copper area (≥6 cm²) and ambient airflow per Infineon's thermal test conditions.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes. It includes a monolithic body diode rated for 30 A continuous forward current and 120 A pulsed current. Key parameters include V_SD = 0.95–1.3 V at 26 A and 25 °C, t_rr = 40 ns, and Q_rr = 36 nC under specified test conditions (V_R = 30 V, dI/dt = 100 A/µs), enabling use in synchronous rectification and freewheeling applications.

How does the PG-TO252-3-11 package affect thermal performance compared to TO-220?

The PG-TO252-3-11 (DPAK) package delivers R_thJC = 2.2 K/W - superior to typical TO-220 devices (~3.0–4.0 K/W) - due to its low-inductance exposed drain pad and optimized internal die attach. When mounted on ≥6 cm² copper area, its R_thJA drops to 50 K/W, enabling higher power density than through-hole alternatives in automated SMT assembly.