Infineon Technologies IPD26N06S2L35ATMA2

Overview

IPD26N06S2L35ATMA2 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It features a 55 V V_DS, 35 mΩ R_DS(on) at V_GS = 10 V, 30 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification. It is used in 12 V automotive body control modules for high-side load switching.

For engineers reviewing the IPD26N06S2L35ATMA2 datasheet, IPD26N06S2L35ATMA2 pinout, IPD26N06S2L35ATMA2 application, or IPD26N06S2L35ATMA2 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (80 mJ), thermal resistance (R_thJC = 2.2 K/W), and TO-252-3 package compatibility with PCB cooling constraints.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting.

The integrated body diode supports synchronous rectification and freewheeling in DC-DC converters and motor drives. Dynamic parameters-including 621 pF input capacitance, 63 pF reverse transfer capacitance, and 10–24 nC total gate charge-support efficient operation up to several hundred kHz under hard-switching conditions.

Key Specifications

Pinout & Package

IPD26N06S2L35ATMA2 is housed in PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal management. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with STL220N6LF8AG and IRLR024NPBF, IPD26N06S2L35ATMA2 delivers optimal balance of automotive qualification, thermal performance (2.2 K/W), and gate-drive compatibility-making it preferred for space-constrained, high-reliability 12 V load switching where both efficiency and robustness are mandatory.

Availability

IPD26N06S2L35ATMA2 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, LED headlamp systems, and redundant power OR-ing circuits requiring stable component supply across extended product lifecycles.

Supply support for IPD26N06S2L35ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 2nd generation logic-level power transistor family, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive and industrial power systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPD26N06S2L35ATMA2 supports continuous operation up to 175 °C junction temperature, validated per AEC-Q101 stress testing. Derating curves in the datasheet define safe operating area limits based on case temperature and drain current, with thermal resistance R_thJC = 2.2 K/W enabling high-power operation when mounted on adequate copper area.

Is this MOSFET suitable for use in a synchronous buck converter output stage?

Yes-the device's low R_DS(on) (35 mΩ @ 10 V), fast switching times (t_r = 18 ns, t_f = 11 ns), and integrated body diode with 40 ns reverse recovery time make it suitable as a synchronous rectifier in 12 V input buck converters up to ~500 kHz. Gate charge (17 nC typ) ensures compatibility with standard gate drivers like IRS2186.

Does the part have built-in ESD protection on the gate?

No explicit ESD protection structure is documented in the datasheet. The gate oxide is rated for ±20 V V_GS, and the device passes HBM ESD testing per AEC-Q101 (≥2 kV), but external gate series resistance (≥10 Ω) and TVS clamping are recommended in production designs handling manual handling or connector hot-plug events.

Can this MOSFET replace the IRFZ44N in an existing design?

Direct replacement is possible only if gate drive voltage ≥4.5 V and thermal layout accommodates TO-252 footprint. IPD26N06S2L35ATMA2 offers lower R_DS(on) (35 mΩ vs. 28 mΩ @ 10 V), higher V_DS rating (55 V vs. 55 V), and AEC-Q101 qualification-but requires verification of avalanche capability (80 mJ vs. 60 mJ) and gate charge (17 nC vs. 35 nC) impact on driver sizing and switching losses.