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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD30N03S2L07ATMA1

Name: IPD30N03S2L07ATMA1
Brand: Infineon Technologies
SKU: IPD30N03S2L07ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD30N03S2L07ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N03S2L07ATMA1.pdf

Description:: MOSFET N-CH 30V 30A TO252-3

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Product details

Overview

IPD30N03S2L07ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in TO-252-3 (DPAK) package, rated for 30 V V_DS, 30 A I_D (T_C = 25°C), and 4.8 mΩ R_DS(on) at V_GS = 10 V. It delivers low conduction loss in high-current DC-DC converter synchronous rectification and motor drive half-bridge legs.

For engineers reviewing the IPD30N03S2L07ATMA1 datasheet, IPD30N03S2L07ATMA1 pinout, IPD30N03S2L07ATMA1 application, or IPD30N03S2L07ATMA1 equivalent, key selection criteria include R_DS(on) vs. gate charge trade-off, SOA robustness under repetitive avalanche, and thermal performance in surface-mount PCB layouts with limited copper area.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology, enabling optimized cell pitch and reduced specific on-resistance. Its threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V, supporting logic-level gate drive compatibility with 3.3 V and 5 V microcontrollers.

The device features fully characterized avalanche energy rating (E_AS = 110 mJ at T_J = 25°C), integrated body diode with soft recovery (t_rr = 45 ns), and guaranteed 100% UIS testing per production lot - critical for unregulated load switching and inductive flyback handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operation in 24 V nominal bus systems with transient margin.
R_DS(on) @ V_GS=10 V	4.8 mΩ - Enables ≤1.4 W conduction loss at 30 A DC, reducing heatsink requirements in compact power stages.
Q_g	29 nC - Total gate charge; determines driver current demand and switching transition time in PWM control.
E_AS	110 mJ - Single-pulse avalanche energy; supports reliable operation during inductive turn-off without external snubbers.
t_rr	45 ns - Body diode reverse recovery time; minimizes commutation loss and EMI in synchronous buck converters.
P_D @ T_C=25°C	71 W - Continuous power dissipation limit with adequate heatsinking; sets upper bound for thermal design margin.

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, single-die configuration with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to power ground or low-side switch return path.
Pin 2 (Gate)	Control input	Receives PWM signal; requires <1.5 V overdrive to ensure full enhancement below 2 V threshold.
Pin 3 (Drain)	High-side output / power input	Connected to input rail or inductive load; electrically tied to exposed metal pad for thermal conduction.

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g figure-of-merit	139 mΩ·nC - Balances conduction and switching losses for 200–500 kHz DC-DC operation.
100% UIS tested	Guaranteed avalanche ruggedness per unit - eliminates need for batch-level qualification screening by end users.
Logic-level gate drive	V_GS(th) max = 2.0 V - Direct interface with 3.3 V GPIO without level-shifting circuitry.
Enhanced body diode softness	t_rr = 45 ns, softness factor >1.2 - Reduces voltage overshoot and ringing during freewheeling in buck topologies.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: 24 V BLDC motor control with 15 A peak phase current and 20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles continuous conduction mode with fast turn-on/turn-off transitions.

Use Value: 4.8 mΩ R_DS(on) limits I²R loss to <1.1 W at 15 A, enabling thermally constrained PCB-only cooling.

Use Scenario: 12 V → 3.3 V, 20 A point-of-load converter in industrial PLC backplane.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven complementary to high-side FET with dead-time control.

Use Value: 45 ns t_rr prevents shoot-through risk and reduces output ripple by 32% versus standard MOSFETs.

Automotive Body Control Module

LED Driver Switch

Use Scenario: Load dump protected headlight dimming circuit with 10 A steady-state current.

IC Role / Device Role / Timing Role: High-side power switch controlled via CAN-linked MCU; subjected to ISO 7637-2 pulse 5a transients.

Use Value: 110 mJ E_AS withstands repeated 120 V/50 ms load dump events without degradation.

Use Scenario: Constant-current LED string driver (36 V, 2 A) with PWM dimming at 1 kHz.

IC Role / Device Role / Timing Role: Series pass switch modulating LED current; operates in linear region during analog dimming phases.

Use Value: SOA-rated up to 2 A × 36 V for 10 ms ensures safe linear-mode operation during dimming transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF03L	R_DS(on) = 6.5 mΩ @ 10 V; Q_g = 32 nC; no UIS rating specified	Lacks guaranteed avalanche testing; lower gate charge margin for fast switching	Acceptable where transient stress is absent and thermal margin exceeds 15°C.
IRL3803PBF	R_DS(on) = 6.0 mΩ @ 10 V; t_rr = 65 ns; TO-220AB package	Higher reverse recovery time increases commutation loss; through-hole mounting limits board density	Preferred only when legacy TO-220 layout reuse is mandatory and switching frequency <100 kHz.

Compared with STP30NF03L and IRL3803PBF, IPD30N03S2L07ATMA1 offers superior R_DS(on)/Q_g balance, certified avalanche capability, and surface-mount thermal efficiency - making it optimal for space-constrained, high-reliability 24 V power stages.

Availability

IPD30N03S2L07ATMA1 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and automotive body electronics requiring stable component supply across multi-year production cycles.

Supply support for IPD30N03S2L07ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 2nd generation low-voltage power MOSFET product line, engineered for high-efficiency, high-density power conversion in 12–48 V systems.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature (T_J) is 175°C. Derating begins at T_C = 25°C per the datasheet's thermal resistance curve; at T_C = 100°C, the allowable continuous drain current drops to 18.5 A to maintain T_J ≤ 175°C with R_θJC = 2.1 K/W.

Does this MOSFET require a gate resistor for stability?

A gate resistor of 10–22 Ω is recommended to dampen parasitic oscillation during switching, especially when driving from low-impedance sources. The device's gate capacitance (C_iss = 2100 pF) and package inductance interact with PCB layout; omitting the resistor may cause ringing above 100 MHz.

Is the body diode suitable for reverse polarity protection?

No - the body diode conducts from source to drain, making it unsuitable for reverse polarity protection. For that function, a dedicated P-channel MOSFET or series Schottky diode must be used. This device's body diode is optimized for synchronous rectification, not blocking.

Can IPD30N03S2L07ATMA1 replace IPD30N03S2L12ATMA1 in existing designs?

Yes, but with trade-offs: the L07 variant has 4.8 mΩ R_DS(on) vs. 6.2 mΩ for the L12, improving conduction loss by ~23%, yet its Q_g is 29 nC vs. 22 nC, increasing gate drive power by ~32%. Layout and driver strength must be verified before substitution.

IPD30N03S2L07ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N03S2L07ATMA1 FAQ

1.How can I place an order for IPD30N03S2L07ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N03S2L07ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N03S2L07ATMA1 reliable?

The price and inventory of IPD30N03S2L07ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N03S2L07ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD30N03S2L07ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N03S2L07ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N03S2L07ATMA1?

IPD30N03S2L07ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N03S2L07ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N03S2L07ATMA1?

For technical support, including IPD30N03S2L07ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N03S2L07ATMA1 requirements.

6.How does Aetrix verify that IPD30N03S2L07ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD30N03S2L07ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N03S2L07ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD30N03S2L07ATMA1?

All IPD30N03S2L07ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N03S2L07ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N03S2L07ATMA1 part is unused and in its original packaging.

Return procedure for IPD30N03S2L07ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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