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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD30N03S2L10ATMA1

Name: IPD30N03S2L10ATMA1
Brand: Infineon Technologies
SKU: IPD30N03S2L10ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD30N03S2L10ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N03S2L10ATMA1.pdf

Description:: MOSFET N-CH 30V 30A TO252-3

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Product details

Overview

IPD30N03S2L10ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It delivers 30 V V_DS, 10 mΩ R_DS(on) at V_GS = 10 V and I_D = 30 A, operates up to 175 °C, and is AEC-Q101 qualified. Its ultra-low on-resistance and 100% avalanche-tested ruggedness support high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the IPD30N03S2L10ATMA1 datasheet, IPD30N03S2L10ATMA1 pinout, IPD30N03S2L10ATMA1 application, or IPD30N03S2L10ATMA1 equivalent, key selection criteria include its 10 mΩ R_DS(on) at 4.5 V gate drive, 120 A pulsed drain current capability, integrated body diode with 31 ns t_rr, and PG-TO252-3-11 package thermal resistance of 1.5 K/W (junction-to-case).

Technical Context

This OptiMOS® power transistor uses trench-gate silicon technology to achieve low R_DS(on) while maintaining fast switching performance: t_d(on) = 7 ns, t_r = 21 ns, t_d(off) = 29 ns, and t_f = 10 ns under standard test conditions (V_DD = 15 V, I_D = 30 A, R_G = 5.4 Ω). Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from 3.3 V or 5 V microcontrollers.

The device integrates a robust body diode with V_SD = 0.9–1.3 V at I_F = 30 A and Q_rr = 29 nC, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Thermal design is enabled by R_thJC = 1.5 K/W and R_thJA = 50 K/W on 6 cm² PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V automotive battery systems and 12 V industrial rails.
R_DS(on) max @ V_GS = 10 V	10 mΩ - Enables ≤3 W conduction loss at 30 A continuous drain current in thermally managed layouts.
I_D continuous @ T_C = 25 °C	30 A - Sustained current rating limited by bondwire; supports high-current load switching without derating at ambient temperatures ≤85 °C.
E_AS	150 mJ - Single-pulse avalanche energy rating ensures reliable operation during inductive load turn-off transients.
t_rr	31 ns - Fast reverse recovery time minimizes switching losses and shoot-through risk in synchronous topologies.
Q_g total	31–42 nC - Gate charge range informs driver selection: requires ≥1 A peak gate current for <100 ns turn-on with 5.4 Ω gate resistor.
R_thJC	1.5 K/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power density designs.

Pinout & Package

IPD30N03S2L10ATMA1 is housed in a PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package meets MSL1 reflow requirements (peak 260 °C) and features green/lead-free construction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt for overcurrent protection.
Pin 2 (Gate)	Control input	Logic-level compatible; drives with 3.3 V/5 V MCU outputs; requires external gate resistor for EMI and dV/dt control.
Pin 3 (Drain)	Power output / High-side switch node	Exposed copper pad on bottom surface; electrically and thermally connected to drain; must be soldered to large PCB copper area.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% unclamped inductive switching (UIS) tested	Guarantees single-pulse avalanche robustness up to 150 mJ, eliminating need for external snubbers in relay replacement circuits.
Logic-level gate drive (V_GS(th) = 1.2–2.0 V)	Enables direct interface with low-voltage MCUs and ASICs without level-shifting circuitry, reducing BOM count and layout complexity.
Ultra-low R_DS(on) at 4.5 V	12.0–14.6 mΩ - Maintains <500 mW conduction loss at 20 A with 4.5 V gate drive, critical for 3.3 V system power stages.
Integrated body diode with low Q_rr	Q_rr = 29 nC - Reduces recovery-related switching losses and EMI in hard-switched DC-DC converters and motor phase-legs.

Applications

Automotive Engine Control Unit (ECU)

Industrial 24 V DC Motor Driver

Use Scenario: Switching fuel injector solenoids and ignition coils in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch with precise PWM timing and high transient immunity.

Use Value: 175 °C operating temperature and AEC-Q101 qualification ensure reliability in under-hood environments; 150 mJ E_AS withstands coil flyback energy without clamping diodes.

Use Scenario: Driving brushed DC motors in automated material handling equipment.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with fast PWM control (≤20 kHz).

Use Value: 10 mΩ R_DS(on) reduces heat generation at 30 A stall current; 120 A pulsed rating handles motor startup surges without derating.

Server PSU Synchronous Rectifier

LED Streetlight Constant-Current Driver

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated DC-DC modules.

IC Role / Device Role / Timing Role: High-frequency (100–500 kHz) rectifying switch replacing Schottky diodes.

Use Value: 31 ns t_rr and 29 nC Q_rr minimize reverse recovery losses; low Q_g enables efficient gate driving at high frequencies.

Use Scenario: Constant-current regulation and dimming control in outdoor LED luminaires.

IC Role / Device Role / Timing Role: Primary-side switch in buck or buck-boost LED driver topology.

Use Value: 30 V V_DS safely handles 24–48 V input rails with margin; 1.5 K/W R_thJC allows compact heatsinking in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL30DN3LLH6	R_DS(on) = 11.5 mΩ @ 4.5 V; lower Q_g (25 nC); no AEC-Q101 certification.	Suitable for commercial-grade 24 V motor control but not automotive under-hood use.	Select when cost sensitivity outweighs automotive qualification and higher R_DS(on) is acceptable.
IRL3803PBF	R_DS(on) = 12 mΩ @ 4.5 V; older planar process; higher C_iss (1500 pF vs. 1200 pF); no avalanche rating.	Legacy replacement only; lacks modern thermal and ruggedness specs for new designs.	Use only for drop-in repair of legacy systems where footprint compatibility is mandatory.

Compared with STL30DN3LLH6 and IRL3803PBF, IPD30N03S2L10ATMA1 offers superior automotive qualification, lower R_DS(on) at 4.5 V, and guaranteed avalanche energy-making it the preferred choice for new high-reliability 24 V power stages where thermal efficiency and transient robustness are critical.

Availability

IPD30N03S2L10ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drives, server power supplies, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for IPD30N03S2L10ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 30 V logic-level power MOSFET product line, engineered specifically for high-current, high-temperature switching in automotive and industrial power conversion where low conduction loss and robustness are essential.

FAQ

What is the maximum allowable gate-source voltage for IPD30N03S2L10ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this rating risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to 10–12 V in standard switching applications, with transient spikes clamped using Zener diodes if needed.

Does IPD30N03S2L10ATMA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to control dV/dt, suppress ringing, and limit peak gate current. For 30 A switching with 5 V logic drive, a 4.7–10 Ω resistor is typical. Lower values (≤5 Ω) improve switching speed but increase EMI; higher values (>15 Ω) reduce EMI but raise switching losses.

Can IPD30N03S2L10ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables current sharing when paralleled. However, matched gate drive layout (symmetrical trace lengths, individual gate resistors), thermal coupling, and current-sense feedback are essential to prevent thermal runaway and ensure balanced loading.

Is the PG-TO252-3-11 package lead-free and RoHS compliant?

Yes-the device carries "Green package (lead free)" designation per Infineon documentation and complies with RoHS Directive 2011/65/EU. The package is rated MSL1 and supports lead-free reflow profiles up to 260 °C peak temperature.

IPD30N03S2L10ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N03S2L10ATMA1 FAQ

1.How can I place an order for IPD30N03S2L10ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N03S2L10ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N03S2L10ATMA1 reliable?

The price and inventory of IPD30N03S2L10ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N03S2L10ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD30N03S2L10ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N03S2L10ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N03S2L10ATMA1?

IPD30N03S2L10ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N03S2L10ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N03S2L10ATMA1?

For technical support, including IPD30N03S2L10ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N03S2L10ATMA1 requirements.

6.How does Aetrix verify that IPD30N03S2L10ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD30N03S2L10ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N03S2L10ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD30N03S2L10ATMA1?

All IPD30N03S2L10ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N03S2L10ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N03S2L10ATMA1 part is unused and in its original packaging.

Return procedure for IPD30N03S2L10ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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